BAT85S-TR
  • Share:

Vishay General Semiconductor - Diodes Division BAT85S-TR

Manufacturer No:
BAT85S-TR
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT85S-TR is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for applications requiring efficient power management due to its low forward voltage drop and high current handling capabilities. The BAT85S-TR is part of Vishay's extensive portfolio of diodes, which are widely used in various industries including automotive, industrial, computing, and consumer electronics.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse VoltageTamb = 25 °CVR30V
Peak Forward Surge Currenttp ≤ 10 msIFSM5A
Repetitive Peak Forward Currenttp < 1 sIFRM300mA
Forward Continuous CurrentTamb = 50 °CIF200mA
Average Forward CurrentPCB mounting, I = 4 mm; VRWM = 25 VIFAV200mA
Forward VoltageIF = 0.1 mAVF240mV
Forward VoltageIF = 1 mAVF320mV
Reverse CurrentVR = 25 VIR2μA
Diode CapacitanceVR = 1 V, f = 1 MHzCD10pF
Reverse Recovery TimeIF = 10 mA to IR = 10 mA to iR = 1 mAtrr5ns

Key Features

  • Low Forward Voltage Drop: The BAT85S-TR features a low forward voltage drop, making it suitable for applications requiring efficient power management.
  • High Current Handling: It has a forward continuous current rating of 200 mA and a peak forward surge current rating of 5 A for tp ≤ 10 ms.
  • Low Reverse Current: The diode has a low reverse current of 2 μA at VR = 25 V, contributing to its efficiency in various applications.
  • Fast Switching: With a reverse recovery time of 5 ns, this diode is ideal for high-speed switching applications.
  • Compact Package: Available in the DO-35 (DO-204AH) package, it is suitable for space-constrained designs.

Applications

  • Automotive Systems: Used in various automotive applications such as power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Consumer Electronics: Suitable for use in consumer electronics due to its low power consumption and high efficiency.
  • Industrial and Computing: Applied in industrial and computing environments where efficient power management is crucial.
  • Signal Switching and Rectification: Ideal for rectification, polarity protection, or signal switching applications due to its fast switching characteristics.

Q & A

  1. What is the maximum reverse voltage of the BAT85S-TR?
    The maximum reverse voltage of the BAT85S-TR is 30 V.
  2. What is the forward continuous current rating of the BAT85S-TR?
    The forward continuous current rating is 200 mA.
  3. What is the typical forward voltage drop of the BAT85S-TR at 1 mA?
    The typical forward voltage drop at 1 mA is 320 mV.
  4. What is the reverse recovery time of the BAT85S-TR?
    The reverse recovery time is 5 ns.
  5. In what package is the BAT85S-TR available?
    The BAT85S-TR is available in the DO-35 (DO-204AH) package.
  6. What are some common applications of the BAT85S-TR?
    Common applications include automotive systems, consumer electronics, industrial, and computing environments.
  7. What is the peak forward surge current rating of the BAT85S-TR?
    The peak forward surge current rating is 5 A for tp ≤ 10 ms.
  8. What is the diode capacitance of the BAT85S-TR at 1 MHz?
    The diode capacitance is 10 pF at VR = 1 V and f = 1 MHz.
  9. Is the BAT85S-TR suitable for high-speed switching applications?
    Yes, it is suitable due to its fast switching characteristics and low reverse recovery time.
  10. What is the storage temperature range for the BAT85S-TR?
    The storage temperature range is -65 to +150 °C).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.39
962

Please send RFQ , we will respond immediately.

Same Series
BAT85S-TR
BAT85S-TR
DIODE SCHOTTKY 30V 200MA DO35

Similar Products

Part Number BAT85S-TR BAT86S-TR BAT81S-TR BAT82S-TR BAT83S-TR
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 50 V 40 V 50 V 60 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 30mA (DC) 30mA (DC) 30mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 900 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns - - - -
Current - Reverse Leakage @ Vr 2 µA @ 25 V 5 µA @ 40 V 200 nA @ 40 V 200 nA @ 50 V 200 nA @ 60 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 (DO-204AH)
Operating Temperature - Junction -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

SM6T12AHE3_A/I
SM6T12AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T200A-M3/57T
SM15T200A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM6T10AHE3/5B
SM6T10AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T30CAHM3/I
SM6T30CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
BYQ28EF-100-E3/45
BYQ28EF-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A ITO220AB
MURB1620CTTRL
MURB1620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BZX84C3V3-HE3-18
BZX84C3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX384B75-E3-18
BZX384B75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323