1N4937GHR1G
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Taiwan Semiconductor Corporation 1N4937GHR1G

Manufacturer No:
1N4937GHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The 1N4937GHR1G is a fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency applications requiring fast switching times and high current capability. It features a glass passivated die construction and a diffused junction, ensuring reliable operation in various electrical environments. The 1N4937GHR1G is part of the 1N4933G to 1N4937G series, which offers a range of voltage ratings, but this specific model is rated for 600V DC reverse voltage and 1A average rectified current.

Key Specifications

Parameter Value Unit
Manufacturer Taiwan Semiconductor Corporation
Model Name 1N4937GHR1G
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.2 @ 1 A V
Reverse Recovery Time (trr) 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 10 pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55°C ~ 150°C

Key Features

  • Glass Passivated Die Construction: Ensures reliable operation and high surge current capability.
  • Diffused Junction: Provides high efficiency and fast switching times.
  • Fast Recovery Time: Less than 500ns, making it suitable for high-frequency applications.
  • High Current Capability: Rated for 1A average rectified current.
  • Low Forward Voltage Drop: Maximum forward voltage of 1.2V at 1A.
  • Surge Overload Rating: Up to 30A peak non-repetitive forward surge current.
  • Lead Free Finish, RoHS Compliant: Meets EU Directive 2002/95/EC (RoHS) standards.

Applications

  • Power Supplies: Suitable for use in rectifier circuits in power supplies due to its high current and voltage ratings.
  • Motor Control: Used in motor control circuits where fast recovery times are essential.
  • High-Frequency Switching: Ideal for applications requiring fast switching times, such as inverter circuits and switching power supplies.
  • General Rectification: Can be used in various general-purpose rectification applications where reliability and efficiency are critical.

Q & A

  1. What is the maximum DC reverse voltage rating of the 1N4937GHR1G diode?

    The maximum DC reverse voltage rating is 600V.

  2. What is the average rectified current rating of the 1N4937GHR1G diode?

    The average rectified current rating is 1A.

  3. What is the forward voltage drop at 1A for the 1N4937GHR1G diode?

    The forward voltage drop at 1A is 1.2V.

  4. What is the reverse recovery time of the 1N4937GHR1G diode?

    The reverse recovery time is less than 200ns.

  5. Is the 1N4937GHR1G diode RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  6. What are the typical operating temperature ranges for the 1N4937GHR1G diode?

    The operating temperature range is -55°C to 150°C.

  7. What type of package does the 1N4937GHR1G diode come in?

    The diode comes in DO-204AL, DO-41, and Axial packages.

  8. What is the maximum non-repetitive peak forward surge current for the 1N4937GHR1G diode?

    The maximum non-repetitive peak forward surge current is 30A.

  9. Is the 1N4937GHR1G diode suitable for high-frequency applications?

    Yes, it is suitable due to its fast recovery time and high efficiency.

  10. What is the typical junction capacitance of the 1N4937GHR1G diode?

    The typical junction capacitance is 10 pF at 4V and 1MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4937GHR1G 1N4934GHR1G 1N4935GHR1G 1N4936GHR1G 1N4937G R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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