1N4937GHR1G
  • Share:

Taiwan Semiconductor Corporation 1N4937GHR1G

Manufacturer No:
1N4937GHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GHR1G is a fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency applications requiring fast switching times and high current capability. It features a glass passivated die construction and a diffused junction, ensuring reliable operation in various electrical environments. The 1N4937GHR1G is part of the 1N4933G to 1N4937G series, which offers a range of voltage ratings, but this specific model is rated for 600V DC reverse voltage and 1A average rectified current.

Key Specifications

Parameter Value Unit
Manufacturer Taiwan Semiconductor Corporation
Model Name 1N4937GHR1G
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.2 @ 1 A V
Reverse Recovery Time (trr) 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 10 pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55°C ~ 150°C

Key Features

  • Glass Passivated Die Construction: Ensures reliable operation and high surge current capability.
  • Diffused Junction: Provides high efficiency and fast switching times.
  • Fast Recovery Time: Less than 500ns, making it suitable for high-frequency applications.
  • High Current Capability: Rated for 1A average rectified current.
  • Low Forward Voltage Drop: Maximum forward voltage of 1.2V at 1A.
  • Surge Overload Rating: Up to 30A peak non-repetitive forward surge current.
  • Lead Free Finish, RoHS Compliant: Meets EU Directive 2002/95/EC (RoHS) standards.

Applications

  • Power Supplies: Suitable for use in rectifier circuits in power supplies due to its high current and voltage ratings.
  • Motor Control: Used in motor control circuits where fast recovery times are essential.
  • High-Frequency Switching: Ideal for applications requiring fast switching times, such as inverter circuits and switching power supplies.
  • General Rectification: Can be used in various general-purpose rectification applications where reliability and efficiency are critical.

Q & A

  1. What is the maximum DC reverse voltage rating of the 1N4937GHR1G diode?

    The maximum DC reverse voltage rating is 600V.

  2. What is the average rectified current rating of the 1N4937GHR1G diode?

    The average rectified current rating is 1A.

  3. What is the forward voltage drop at 1A for the 1N4937GHR1G diode?

    The forward voltage drop at 1A is 1.2V.

  4. What is the reverse recovery time of the 1N4937GHR1G diode?

    The reverse recovery time is less than 200ns.

  5. Is the 1N4937GHR1G diode RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  6. What are the typical operating temperature ranges for the 1N4937GHR1G diode?

    The operating temperature range is -55°C to 150°C.

  7. What type of package does the 1N4937GHR1G diode come in?

    The diode comes in DO-204AL, DO-41, and Axial packages.

  8. What is the maximum non-repetitive peak forward surge current for the 1N4937GHR1G diode?

    The maximum non-repetitive peak forward surge current is 30A.

  9. Is the 1N4937GHR1G diode suitable for high-frequency applications?

    Yes, it is suitable due to its fast recovery time and high efficiency.

  10. What is the typical junction capacitance of the 1N4937GHR1G diode?

    The typical junction capacitance is 10 pF at 4V and 1MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
118

Please send RFQ , we will respond immediately.

Same Series
1N4933G R1G
1N4933G R1G
DIODE GEN PURP 50V 1A DO204AL
1N4934GHR1G
1N4934GHR1G
DIODE GEN PURP 100V 1A DO204AL
1N4935GHR1G
1N4935GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4936G R1G
1N4936G R1G
DIODE GEN PURP 400V 1A DO204AL
1N4934G R0G
1N4934G R0G
DIODE GEN PURP 100V 1A DO204AL
1N4935G R0G
1N4935G R0G
DIODE GEN PURP 200V 1A DO204AL
1N4933GHA0G
1N4933GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4935G A0G
1N4935G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4935GHA0G
1N4935GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4937G A0G
1N4937G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4935G B0G
1N4935G B0G
DIODE GEN PURP 200V 1A DO204AL
1N4935GHB0G
1N4935GHB0G
DIODE GEN PURP 200V 1A DO204AL

Similar Products

Part Number 1N4937GHR1G 1N4934GHR1G 1N4935GHR1G 1N4936GHR1G 1N4937G R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MBR10100H
MBR10100H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BZV55C16 L0G
BZV55C16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C51 L0G
BZV55C51 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
BZV55B18 L1G
BZV55B18 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BC817-16 RFG
BC817-16 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23