FFSD0665B-F085
  • Share:

onsemi FFSD0665B-F085

Manufacturer No:
FFSD0665B-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
650V 6A SIC SBD GEN1.5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSD0665B-F085 from onsemi is a Silicon Carbide (SiC) Schottky Diode, representing the next generation of power semiconductor technology. This diode offers superior switching performance, higher reliability, and enhanced thermal characteristics compared to traditional silicon diodes. It features no reverse recovery current, temperature-independent switching, and excellent thermal performance, making it ideal for high-efficiency and high-frequency applications. The device is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant.

Key Specifications

ParameterSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM650V
Continuous Rectified Forward Current (TC < 154°C)IF6.0A
Continuous Rectified Forward Current (TC < 135°C)IF9.1A
Non-Repetitive Peak Forward Surge Current (TC = 25°C, tP = 10 μs)IFM493A
Non-Repetitive Forward Surge Current (Half-Sine Pulse, TC = 25°C, tP = 8.3 ms)IFSM28A
Power Dissipation (TC = 25°C)Ptot75W
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +175°C
Thermal Resistance, Junction-to-CaseRJC2.0°C/W
Forward Voltage (IF = 6.0 A, TJ = 25°C)VF1.38 - 1.7V
Reverse Current (VR = 650 V, TJ = 25°C)IR0.5 - 40μA

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 24.5 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters

Q & A

  1. What is the peak repetitive reverse voltage of the FFSD0665B-F085?
    The peak repetitive reverse voltage is 650 V.
  2. What is the continuous rectified forward current at different temperatures?
    The continuous rectified forward current is 6.0 A at TC < 154°C and 9.1 A at TC < 135°C.
  3. What is the non-repetitive peak forward surge current?
    The non-repetitive peak forward surge current is 493 A at TC = 25°C and tP = 10 μs.
  4. What is the thermal resistance, junction-to-case?
    The thermal resistance, junction-to-case, is 2.0 °C/W.
  5. What are the operating junction and storage temperature ranges?
    The operating junction and storage temperature ranges are -55 to +175 °C.
  6. Is the FFSD0665B-F085 AEC-Q101 qualified?
    Yes, the FFSD0665B-F085 is AEC-Q101 qualified and PPAP capable.
  7. What are the typical applications of the FFSD0665B-F085?
    The typical applications include automotive HEV-EV onboard chargers and DC-DC converters.
  8. What is the forward voltage at different temperatures?
    The forward voltage ranges from 1.38 to 2.4 V depending on the temperature and current conditions.
  9. Is the FFSD0665B-F085 RoHS compliant?
    Yes, the FFSD0665B-F085 is Pb-free, halogen-free, and RoHS compliant.
  10. What is the package type of the FFSD0665B-F085?
    The package type is DPAK (TO-252, 3 LD).

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):9.1A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:259pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-PAK (TO-252)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$2.75
145

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number FFSD0665B-F085 FFSD0865B-F085 FFSB0665B-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 9.1A (DC) 11.6A (DC) 8A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A 1.7 V @ 8 A 1.7 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F 259pF @ 1V, 100kHz 336pF @ 1V, 100kHz 259pF @ 1V, 100kHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252) D²PAK-2 (TO-263-2)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5