FFSD0665B-F085
  • Share:

onsemi FFSD0665B-F085

Manufacturer No:
FFSD0665B-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
650V 6A SIC SBD GEN1.5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSD0665B-F085 from onsemi is a Silicon Carbide (SiC) Schottky Diode, representing the next generation of power semiconductor technology. This diode offers superior switching performance, higher reliability, and enhanced thermal characteristics compared to traditional silicon diodes. It features no reverse recovery current, temperature-independent switching, and excellent thermal performance, making it ideal for high-efficiency and high-frequency applications. The device is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant.

Key Specifications

ParameterSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM650V
Continuous Rectified Forward Current (TC < 154°C)IF6.0A
Continuous Rectified Forward Current (TC < 135°C)IF9.1A
Non-Repetitive Peak Forward Surge Current (TC = 25°C, tP = 10 μs)IFM493A
Non-Repetitive Forward Surge Current (Half-Sine Pulse, TC = 25°C, tP = 8.3 ms)IFSM28A
Power Dissipation (TC = 25°C)Ptot75W
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +175°C
Thermal Resistance, Junction-to-CaseRJC2.0°C/W
Forward Voltage (IF = 6.0 A, TJ = 25°C)VF1.38 - 1.7V
Reverse Current (VR = 650 V, TJ = 25°C)IR0.5 - 40μA

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 24.5 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters

Q & A

  1. What is the peak repetitive reverse voltage of the FFSD0665B-F085?
    The peak repetitive reverse voltage is 650 V.
  2. What is the continuous rectified forward current at different temperatures?
    The continuous rectified forward current is 6.0 A at TC < 154°C and 9.1 A at TC < 135°C.
  3. What is the non-repetitive peak forward surge current?
    The non-repetitive peak forward surge current is 493 A at TC = 25°C and tP = 10 μs.
  4. What is the thermal resistance, junction-to-case?
    The thermal resistance, junction-to-case, is 2.0 °C/W.
  5. What are the operating junction and storage temperature ranges?
    The operating junction and storage temperature ranges are -55 to +175 °C.
  6. Is the FFSD0665B-F085 AEC-Q101 qualified?
    Yes, the FFSD0665B-F085 is AEC-Q101 qualified and PPAP capable.
  7. What are the typical applications of the FFSD0665B-F085?
    The typical applications include automotive HEV-EV onboard chargers and DC-DC converters.
  8. What is the forward voltage at different temperatures?
    The forward voltage ranges from 1.38 to 2.4 V depending on the temperature and current conditions.
  9. Is the FFSD0665B-F085 RoHS compliant?
    Yes, the FFSD0665B-F085 is Pb-free, halogen-free, and RoHS compliant.
  10. What is the package type of the FFSD0665B-F085?
    The package type is DPAK (TO-252, 3 LD).

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):9.1A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:259pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-PAK (TO-252)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$2.75
145

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number FFSD0665B-F085 FFSD0865B-F085 FFSB0665B-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 9.1A (DC) 11.6A (DC) 8A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A 1.7 V @ 8 A 1.7 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F 259pF @ 1V, 100kHz 336pF @ 1V, 100kHz 259pF @ 1V, 100kHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252) D²PAK-2 (TO-263-2)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5