Overview
The FFSD0865B-F085 is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This diode leverages advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon diodes. It is designed for high-efficiency applications, providing faster operating frequencies, increased power density, reduced electromagnetic interference (EMI), and a smaller system size and cost.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 650 | V |
| Continuous Rectified Forward Current (TC < 153°C) | IF | 8.0 | A |
| Continuous Rectified Forward Current (TC < 135°C) | IF | 11.6 | A |
| Non-Repetitive Peak Forward Surge Current (TC = 25°C, tP = 10 μs) | IFM | 577 | A |
| Non-Repetitive Forward Surge Current (Half-Sine Pulse, TC = 25°C, tP = 8.3 ms) | IFSM | 42 | A |
| Power Dissipation (TC = 25°C) | Ptot | 91 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 1.64 | °C/W |
| Forward Voltage (IF = 8.0 A, TJ = 25°C) | VF | 1.39 - 1.7 | V |
| Reverse Current (VR = 650 V, TJ = 25°C) | IR | 0.5 - 40 | μA |
Key Features
- No reverse recovery current and no forward recovery, enhancing switching performance.
- Temperature-independent switching characteristics.
- Excellent thermal performance.
- Avalanche rated with a single pulse avalanche energy of 33 mJ.
- High surge current capacity.
- Positive temperature coefficient.
- Ease of paralleling.
- AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The FFSD0865B-F085 SiC Schottky Diode is suitable for a variety of high-efficiency applications, including:
- Power supplies and DC-DC converters.
- Motor drives and inverters.
- Renewable energy systems such as solar and wind power.
- Electric vehicles and charging infrastructure.
- Industrial power systems and high-frequency applications.
Q & A
- What is the peak repetitive reverse voltage of the FFSD0865B-F085?
The peak repetitive reverse voltage is 650 V.
- What is the maximum continuous forward current at a case temperature below 153°C?
The maximum continuous forward current is 8.0 A.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 1.64 °C/W.
- Does the FFSD0865B-F085 have any special certifications?
Yes, it is AEC-Q101 qualified and PPAP capable.
- Is the FFSD0865B-F085 RoHS compliant?
Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are the typical applications for this diode?
It is used in power supplies, DC-DC converters, motor drives, renewable energy systems, electric vehicles, and high-frequency applications.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175 °C.
- Does the FFSD0865B-F085 have any reverse recovery current?
No, it does not have any reverse recovery current.
- What is the single pulse avalanche energy rating?
The single pulse avalanche energy rating is 33 mJ.
- What is the package type of the FFSD0865B-F085?
The package type is DPAK (TO-252, 3 LD).
