STPSC406B-TR
  • Share:

STMicroelectronics STPSC406B-TR

Manufacturer No:
STPSC406B-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 600V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC406B-TR is a high-performance power Schottky diode manufactured by STMicroelectronics. This silicon carbide (SiC) diode is designed to operate at high voltages and currents, making it suitable for various power conversion applications. The device is packaged in a TO-252-2 (DPAK) case, which is a surface-mount device (SMD) package. The SiC substrate used in this diode allows for a 600 V rating and offers superior performance compared to traditional silicon diodes, particularly in hard switching conditions.

Key Specifications

Parameter Description Value Unit
Manufacturer STMicroelectronics
Package TO-252-2 (DPAK)
VRRM (Repetitive Peak Reverse Voltage) 600 V 600 V
IF(AV) (Average Forward Current) 4 A (DPAK, Tc = 110 °C, δ = 0.5) 4 A
IF(RMS) (Forward RMS Current) 11 A 11 A
IFSM (Surge Non-Repetitive Forward Current) 14 A (tp = 10 ms sinusoidal, Tc = 25 °C) 14 A
Tj(max) (Maximum Junction Temperature) 175 °C 175 °C
Qc (Total Capacitive Charge) 3 nC (Vr = 400 V, IF = 4 A, dIF/dt = -200 A/µs, Tj = 150 °C) 3 nC

Key Features

  • No or negligible reverse recovery, reducing switching losses and ringing patterns.
  • Switching behavior independent of temperature, ensuring consistent performance across a wide temperature range.
  • Dedicated to Power Factor Correction (PFC) boost diode applications, enhancing the performance of PFC operations in hard switching conditions.
  • Manufactured using a silicon carbide substrate, which allows for a high voltage rating of 600 V and superior thermal management.

Applications

The STPSC406B-TR is particularly suited for high-performance power conversion applications, including:

  • Power Factor Correction (PFC) circuits, where its low reverse recovery and temperature-independent switching behavior are beneficial.
  • High-power switching applications, such as inverter systems and DC-DC converters.
  • Renewable energy systems, including solar and wind power conversion.
  • Industrial power supplies and motor drives, where high efficiency and reliability are critical.

Q & A

  1. What is the maximum reverse voltage rating of the STPSC406B-TR?

    The maximum reverse voltage rating is 600 V.

  2. What is the average forward current rating of the STPSC406B-TR?

    The average forward current rating is 4 A for the DPAK package at Tc = 110 °C and δ = 0.5.

  3. What is the package type of the STPSC406B-TR?

    The package type is TO-252-2 (DPAK), which is a surface-mount device (SMD) package.

  4. What are the key features of the STPSC406B-TR?

    The key features include no or negligible reverse recovery, switching behavior independent of temperature, and dedication to PFC boost diode applications.

  5. What is the maximum junction temperature of the STPSC406B-TR?

    The maximum junction temperature is 175 °C.

  6. What is the total capacitive charge of the STPSC406B-TR?

    The total capacitive charge is 3 nC under specified conditions.

  7. What are the typical applications of the STPSC406B-TR?

    Typical applications include PFC circuits, high-power switching applications, renewable energy systems, and industrial power supplies.

  8. Why is the STPSC406B-TR preferred in hard switching conditions?

    The STPSC406B-TR is preferred due to its negligible reverse recovery and temperature-independent switching behavior, which enhance performance in hard switching conditions.

  9. What is the surge non-repetitive forward current rating of the STPSC406B-TR?

    The surge non-repetitive forward current rating is 14 A for a 10 ms sinusoidal pulse at Tc = 25 °C.

  10. Is the STPSC406B-TR RoHS compliant?

    Yes, the STPSC406B-TR is RoHS compliant.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:200pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.05
311

Please send RFQ , we will respond immediately.

Same Series
STPSC406D
STPSC406D
DIODE SCHOTTKY 600V 4A TO220AC

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO