STPSC406B-TR
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STMicroelectronics STPSC406B-TR

Manufacturer No:
STPSC406B-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 600V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC406B-TR is a high-performance power Schottky diode manufactured by STMicroelectronics. This silicon carbide (SiC) diode is designed to operate at high voltages and currents, making it suitable for various power conversion applications. The device is packaged in a TO-252-2 (DPAK) case, which is a surface-mount device (SMD) package. The SiC substrate used in this diode allows for a 600 V rating and offers superior performance compared to traditional silicon diodes, particularly in hard switching conditions.

Key Specifications

Parameter Description Value Unit
Manufacturer STMicroelectronics
Package TO-252-2 (DPAK)
VRRM (Repetitive Peak Reverse Voltage) 600 V 600 V
IF(AV) (Average Forward Current) 4 A (DPAK, Tc = 110 °C, δ = 0.5) 4 A
IF(RMS) (Forward RMS Current) 11 A 11 A
IFSM (Surge Non-Repetitive Forward Current) 14 A (tp = 10 ms sinusoidal, Tc = 25 °C) 14 A
Tj(max) (Maximum Junction Temperature) 175 °C 175 °C
Qc (Total Capacitive Charge) 3 nC (Vr = 400 V, IF = 4 A, dIF/dt = -200 A/µs, Tj = 150 °C) 3 nC

Key Features

  • No or negligible reverse recovery, reducing switching losses and ringing patterns.
  • Switching behavior independent of temperature, ensuring consistent performance across a wide temperature range.
  • Dedicated to Power Factor Correction (PFC) boost diode applications, enhancing the performance of PFC operations in hard switching conditions.
  • Manufactured using a silicon carbide substrate, which allows for a high voltage rating of 600 V and superior thermal management.

Applications

The STPSC406B-TR is particularly suited for high-performance power conversion applications, including:

  • Power Factor Correction (PFC) circuits, where its low reverse recovery and temperature-independent switching behavior are beneficial.
  • High-power switching applications, such as inverter systems and DC-DC converters.
  • Renewable energy systems, including solar and wind power conversion.
  • Industrial power supplies and motor drives, where high efficiency and reliability are critical.

Q & A

  1. What is the maximum reverse voltage rating of the STPSC406B-TR?

    The maximum reverse voltage rating is 600 V.

  2. What is the average forward current rating of the STPSC406B-TR?

    The average forward current rating is 4 A for the DPAK package at Tc = 110 °C and δ = 0.5.

  3. What is the package type of the STPSC406B-TR?

    The package type is TO-252-2 (DPAK), which is a surface-mount device (SMD) package.

  4. What are the key features of the STPSC406B-TR?

    The key features include no or negligible reverse recovery, switching behavior independent of temperature, and dedication to PFC boost diode applications.

  5. What is the maximum junction temperature of the STPSC406B-TR?

    The maximum junction temperature is 175 °C.

  6. What is the total capacitive charge of the STPSC406B-TR?

    The total capacitive charge is 3 nC under specified conditions.

  7. What are the typical applications of the STPSC406B-TR?

    Typical applications include PFC circuits, high-power switching applications, renewable energy systems, and industrial power supplies.

  8. Why is the STPSC406B-TR preferred in hard switching conditions?

    The STPSC406B-TR is preferred due to its negligible reverse recovery and temperature-independent switching behavior, which enhance performance in hard switching conditions.

  9. What is the surge non-repetitive forward current rating of the STPSC406B-TR?

    The surge non-repetitive forward current rating is 14 A for a 10 ms sinusoidal pulse at Tc = 25 °C.

  10. Is the STPSC406B-TR RoHS compliant?

    Yes, the STPSC406B-TR is RoHS compliant.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:200pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-40°C ~ 175°C
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