STPSC406B-TR
  • Share:

STMicroelectronics STPSC406B-TR

Manufacturer No:
STPSC406B-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 600V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC406B-TR is a high-performance power Schottky diode manufactured by STMicroelectronics. This silicon carbide (SiC) diode is designed to operate at high voltages and currents, making it suitable for various power conversion applications. The device is packaged in a TO-252-2 (DPAK) case, which is a surface-mount device (SMD) package. The SiC substrate used in this diode allows for a 600 V rating and offers superior performance compared to traditional silicon diodes, particularly in hard switching conditions.

Key Specifications

Parameter Description Value Unit
Manufacturer STMicroelectronics
Package TO-252-2 (DPAK)
VRRM (Repetitive Peak Reverse Voltage) 600 V 600 V
IF(AV) (Average Forward Current) 4 A (DPAK, Tc = 110 °C, δ = 0.5) 4 A
IF(RMS) (Forward RMS Current) 11 A 11 A
IFSM (Surge Non-Repetitive Forward Current) 14 A (tp = 10 ms sinusoidal, Tc = 25 °C) 14 A
Tj(max) (Maximum Junction Temperature) 175 °C 175 °C
Qc (Total Capacitive Charge) 3 nC (Vr = 400 V, IF = 4 A, dIF/dt = -200 A/µs, Tj = 150 °C) 3 nC

Key Features

  • No or negligible reverse recovery, reducing switching losses and ringing patterns.
  • Switching behavior independent of temperature, ensuring consistent performance across a wide temperature range.
  • Dedicated to Power Factor Correction (PFC) boost diode applications, enhancing the performance of PFC operations in hard switching conditions.
  • Manufactured using a silicon carbide substrate, which allows for a high voltage rating of 600 V and superior thermal management.

Applications

The STPSC406B-TR is particularly suited for high-performance power conversion applications, including:

  • Power Factor Correction (PFC) circuits, where its low reverse recovery and temperature-independent switching behavior are beneficial.
  • High-power switching applications, such as inverter systems and DC-DC converters.
  • Renewable energy systems, including solar and wind power conversion.
  • Industrial power supplies and motor drives, where high efficiency and reliability are critical.

Q & A

  1. What is the maximum reverse voltage rating of the STPSC406B-TR?

    The maximum reverse voltage rating is 600 V.

  2. What is the average forward current rating of the STPSC406B-TR?

    The average forward current rating is 4 A for the DPAK package at Tc = 110 °C and δ = 0.5.

  3. What is the package type of the STPSC406B-TR?

    The package type is TO-252-2 (DPAK), which is a surface-mount device (SMD) package.

  4. What are the key features of the STPSC406B-TR?

    The key features include no or negligible reverse recovery, switching behavior independent of temperature, and dedication to PFC boost diode applications.

  5. What is the maximum junction temperature of the STPSC406B-TR?

    The maximum junction temperature is 175 °C.

  6. What is the total capacitive charge of the STPSC406B-TR?

    The total capacitive charge is 3 nC under specified conditions.

  7. What are the typical applications of the STPSC406B-TR?

    Typical applications include PFC circuits, high-power switching applications, renewable energy systems, and industrial power supplies.

  8. Why is the STPSC406B-TR preferred in hard switching conditions?

    The STPSC406B-TR is preferred due to its negligible reverse recovery and temperature-independent switching behavior, which enhance performance in hard switching conditions.

  9. What is the surge non-repetitive forward current rating of the STPSC406B-TR?

    The surge non-repetitive forward current rating is 14 A for a 10 ms sinusoidal pulse at Tc = 25 °C.

  10. Is the STPSC406B-TR RoHS compliant?

    Yes, the STPSC406B-TR is RoHS compliant.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:200pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.05
311

Please send RFQ , we will respond immediately.

Same Series
STPSC406D
STPSC406D
DIODE SCHOTTKY 600V 4A TO220AC

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA