STPSC10H065D
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STMicroelectronics STPSC10H065D

Manufacturer No:
STPSC10H065D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 10A TO220AC
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The STPSC10H065D is a high-performance power Schottky diode manufactured by STMicroelectronics. This 10 A, 650 V SiC diode is designed using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with a 650 V rating. The diode is characterized by its absence of reverse recovery charge and minimal capacitive turn-off behavior, independent of temperature. It is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability.

Key Specifications

Parameter Value Unit
Maximum Reverse Voltage (DC) 650 V
Average Forward Current 10 A
Forward RMS Current 22 A
Repetitive Peak Forward Current 41 A
Surge Non-Repetitive Forward Current 90 (tp = 10 ms sinusoidal, Tc = 25 °C) A
Operating Junction Temperature Range -40 to +175 °C
Storage Temperature Range -55 to +175 °C
Forward Voltage Drop (Tj = 25 °C, IF = 10 A) 1.56 to 1.75 V
Reverse Leakage Current (Tj = 25 °C, VR = VRRM) 9 to 100 µA
Junction to Case Thermal Resistance (TO-220AC) 1.25 to 1.5 °C/W
Insulated Voltage (TO-220AC Ins) 2500 V RMS
Typical Package Capacitance (TO-220AC Ins) 7 pF

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package (TO-220AC Ins): Insulated voltage 2500 V RMS, Typical package capacitance 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component

Applications

  • Switch mode power supply
  • Power Factor Correction (PFC)
  • DC-DC converters
  • LLC topologies
  • Boost diode applications

Q & A

  1. What is the maximum reverse voltage of the STPSC10H065D?

    The maximum reverse voltage is 650 V.

  2. What is the average forward current rating of the STPSC10H065D?

    The average forward current rating is 10 A.

  3. What is the operating junction temperature range of the STPSC10H065D?

    The operating junction temperature range is -40 to +175 °C.

  4. Does the STPSC10H065D have any reverse recovery charge?

    No, the STPSC10H065D does not have any reverse recovery charge in the application current range.

  5. What is the insulated voltage of the TO-220AC Ins package?

    The insulated voltage of the TO-220AC Ins package is 2500 V RMS.

  6. Is the STPSC10H065D power efficient?
  7. What are the typical applications of the STPSC10H065D?

    The STPSC10H065D is typically used in switch mode power supplies, PFC, DC-DC converters, LLC topologies, and as a boost diode.

  8. What is the forward voltage drop at 10 A and 25 °C?

    The forward voltage drop at 10 A and 25 °C is between 1.56 V and 1.75 V.

  9. Is the STPSC10H065D ECOPACK compliant?
  10. What is the surge non-repetitive forward current rating?

    The surge non-repetitive forward current rating is 90 A for a 10 ms sinusoidal pulse at 25 °C.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:480pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
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Same Series
STPSC10H065G-TR
STPSC10H065G-TR
DIODE SILICON 650V 10A D2PAK
STPSC10H065B-TR
STPSC10H065B-TR
DIODE SCHOTTKY 650V 10A DPAK
STPSC10H065DI
STPSC10H065DI
DIODE SCHOTTKY 650V 10A TO220AC

Similar Products

Part Number STPSC10H065D STPSC10H065DY STPSC12H065D STPSC10H065DI STPSC10065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 12A 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 12 A 1.75 V @ 10 A 1.45 V @ 10 A
Speed No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns - - - 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V 100 µA @ 650 V 120 µA @ 650 V 100 µA @ 650 V 130 µA @ 650 V
Capacitance @ Vr, F 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz 600pF @ 0V, 1MHz - 670pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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