STPSC10H065DI
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STMicroelectronics STPSC10H065DI

Manufacturer No:
STPSC10H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 10A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10H065DI is a high-performance power Schottky diode manufactured by STMicroelectronics. This 10 A, 650 V SiC diode is designed using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with a 650 V rating. The diode is particularly suited for use in Power Factor Correction (PFC) applications and excels in hard switching conditions due to its minimal capacitive turn-off behavior and negligible ringing patterns. The Schottky construction eliminates recovery at turn-off, enhancing its efficiency and robustness during transient phases.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 650 V
IF(RMS) (Forward rms current) 22 A
IF(AV) (Average forward current) 10 A
IFRM (Repetitive peak forward current) 41 A
IFSM (Surge non-repetitive forward current) 470 (tp = 10 µs square, Tc = 25 °C) A
Tstg (Storage temperature range) -55 to +175 °C
Tj (Operating junction temperature) -40 to +175 °C
QCj (Total capacitive charge) 28.5 nC
Cj (Total capacitance) 480 (VR = 0 V, Tc = 25 °C, F = 1 MHz) pF
Package TO-220AC Ins
Insulated voltage 2500 VRMS

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins with 2500 VRMS insulated voltage and typical package capacitance of 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component
  • AEC-Q101 qualified for automotive applications
  • Robust construction for reliability

Applications

  • Power Factor Correction (PFC) applications
  • Switch mode power supplies
  • DC-DC converters
  • LLC topologies
  • Boost diode applications
  • Automotive applications due to AEC-Q101 qualification

Q & A

  1. What is the maximum reverse voltage rating of the STPSC10H065DI?

    The maximum reverse voltage rating is 650 V.

  2. What is the average forward current rating of the STPSC10H065DI?

    The average forward current rating is 10 A.

  3. What is the operating junction temperature range of the STPSC10H065DI?

    The operating junction temperature range is -40 to +175 °C.

  4. Does the STPSC10H065DI have any reverse recovery charge?

    No, the STPSC10H065DI has no or negligible reverse recovery charge.

  5. What is the high forward surge capability of the STPSC10H065DI?

    The high forward surge capability is up to 470 A for a 10 µs square pulse at 25 °C.

  6. Is the STPSC10H065DI compliant with environmental regulations?

    Yes, it is ECOPACK®2 compliant.

  7. What are the typical applications of the STPSC10H065DI?

    Typical applications include PFC, switch mode power supplies, DC-DC converters, LLC topologies, and boost diode applications.

  8. What is the package type of the STPSC10H065DI?

    The package type is TO-220AC Ins.

  9. Is the STPSC10H065DI qualified for automotive use?

    Yes, it is AEC-Q101 qualified.

  10. What is the storage temperature range for the STPSC10H065DI?

    The storage temperature range is -55 to +175 °C.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
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Same Series
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STPSC10H065B-TR
STPSC10H065B-TR
DIODE SCHOTTKY 650V 10A DPAK
STPSC10H065D
STPSC10H065D
DIODE SCHOTTKY 650V 10A TO220AC

Similar Products

Part Number STPSC10H065DI STPSC10H065DY STPSC10H065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V 100 µA @ 650 V 100 µA @ 650 V
Capacitance @ Vr, F - 480pF @ 0V, 1MHz 480pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 TO-220-2
Supplier Device Package TO-220AC ins TO-220AC TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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