STTH2R06S
  • Share:

STMicroelectronics STTH2R06S

Manufacturer No:
STTH2R06S
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A SMC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH2R06S, produced by STMicroelectronics, is a high-efficiency ultrafast diode that utilizes ST Turbo 2 600 V planar Pt doping technology. This device is specifically designed for use in switching mode base drive and transistor circuits. It is available in various package types, including SMC, which is the case for the STTH2R06S model.

The STTH2R06S is optimized for applications requiring low conduction and switching losses, making it suitable for high-frequency inverters, free-wheeling diodes, and polarity protection circuits.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 600 V
Average Forward Current IF(AV) 2 A
Forward RMS Current IF(RMS) 7 A
Surge Non-Repetitive Forward Current IFSM 30 A
Forward Voltage Drop VF 1.0 - 1.25 V
Reverse Recovery Time trr 30 - 50 ns
Operating Junction Temperature Tj -40 to +175 °C
Storage Temperature Range Tstg -65 to +175 °C
Junction to Lead Thermal Resistance Rth(j-l) 20 °C/W

Key Features

  • Very low conduction losses
  • Negligible switching losses
  • Low forward and reverse recovery times
  • High junction temperature capability up to 175°C
  • Available in SMC package for surface mount applications
  • Meets UL 94, V0 epoxy standards
  • ECOPACK® compliant for environmental sustainability

Applications

  • High-frequency inverters
  • Free-wheeling diodes
  • Polarity protection circuits
  • Switching mode base drive and transistor circuits

Q & A

  1. What is the repetitive peak reverse voltage of the STTH2R06S?

    The repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current rating of the STTH2R06S?

    The average forward current (IF(AV)) is 2 A.

  3. What is the forward voltage drop of the STTH2R06S?

    The forward voltage drop (VF) is typically between 1.0 V and 1.25 V.

  4. What is the reverse recovery time of the STTH2R06S?

    The reverse recovery time (trr) is typically between 30 ns and 50 ns.

  5. What are the operating and storage temperature ranges for the STTH2R06S?

    The operating junction temperature range is -40°C to +175°C, and the storage temperature range is -65°C to +175°C.

  6. What package types are available for the STTH2R06 series?

    The STTH2R06 series is available in axial, SMA, SMB, and SMC packages.

  7. What are the key applications of the STTH2R06S?

    The key applications include high-frequency inverters, free-wheeling diodes, polarity protection circuits, and switching mode base drive and transistor circuits.

  8. Does the STTH2R06S meet any specific environmental standards?
  9. What is the surge non-repetitive forward current rating of the STTH2R06S?

    The surge non-repetitive forward current (IFSM) is 30 A.

  10. What is the thermal resistance from junction to lead for the STTH2R06S in an SMC package?

    The thermal resistance from junction to lead (Rth(j-l)) is 20 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$1.00
926

Please send RFQ , we will respond immediately.

Same Series
STTH2R06A
STTH2R06A
DIODE GEN PURP 600V 2A SMA
STTH2R06
STTH2R06
DIODE GEN PURP 600V 2A DO41
STTH2R06RL
STTH2R06RL
DIODE GEN PURP 600V 2A DO41
STTH2R06S
STTH2R06S
DIODE GEN PURP 600V 2A SMC

Similar Products

Part Number STTH2R06S STTH2R06U STTH3R06S STTH2R06 STTH2R06A
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 2A 2A 3A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 2 A 1.7 V @ 2 A 1.7 V @ 3 A 1.7 V @ 2 A 1.7 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 35 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 2 µA @ 600 V 2 µA @ 600 V 3 µA @ 600 V 2 µA @ 600 V 2 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Through Hole Surface Mount
Package / Case DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC DO-204AL, DO-41, Axial DO-214AC, SMA
Supplier Device Package SMC SMB SMC DO-41 SMA
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C 175°C (Max) -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15

Related Product By Brand

STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
TSV6290AICT
TSV6290AICT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT SC70-6
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA