STPSC8H065DI
  • Share:

STMicroelectronics STPSC8H065DI

Manufacturer No:
STPSC8H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC8H065DI is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics using a silicon carbide substrate. This 8 A, 650 V SiC diode is designed with a wide band gap material, enabling a Schottky diode structure with a 650 V rating. The Schottky construction ensures no reverse recovery charge and negligible ringing patterns at turn-off, with minimal capacitive turn-off behavior that is independent of temperature. This diode is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability and robustness during transient phases.

Key Specifications

Parameter Symbol Value Unit
Average Forward Current IF(AV) 8 A
Repetitive Peak Reverse Voltage VRRM 650 V
Typical Forward Voltage Drop VF(typ.) 1.38 V
Maximum Junction Temperature Tj(max.) 175 °C
Forward RMS Current IF(RMS) 22 A
Surge Non-Repetitive Forward Current IFSM 75 (tp = 10 ms, Tc = 25 °C) A
Insulated Voltage Vins 2500 Vrms
Typical Package Capacitance Cp 7 pF

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins with 2500 Vrms insulated voltage and 7 pF typical package capacitance
  • Power efficient product
  • ECOPACK2 compliant component
  • Low drop forward voltage

Applications

  • Switch mode power supply
  • Power Factor Correction (PFC)
  • Boost PFC
  • Bootstrap diode
  • LLC clamping function
  • High frequency inverter applications
  • DC-DC converters
  • LLC topologies

Q & A

  1. What is the maximum forward current of the STPSC8H065DI?

    The maximum average forward current is 8 A.

  2. What is the repetitive peak reverse voltage of the STPSC8H065DI?

    The repetitive peak reverse voltage is 650 V.

  3. What is the typical forward voltage drop of the STPSC8H065DI?

    The typical forward voltage drop is 1.38 V.

  4. What is the maximum junction temperature of the STPSC8H065DI?

    The maximum junction temperature is 175 °C.

  5. Does the STPSC8H065DI have any reverse recovery charge?

    No, the STPSC8H065DI has no reverse recovery charge in the application current range.

  6. Is the switching behavior of the STPSC8H065DI temperature-dependent?

    No, the switching behavior is independent of temperature.

  7. What are the typical applications of the STPSC8H065DI?

    Typical applications include switch mode power supply, PFC, boost PFC, bootstrap diode, LLC clamping function, and high frequency inverter applications.

  8. What is the insulated voltage of the TO-220AC Ins package?

    The insulated voltage is 2500 Vrms.

  9. Is the STPSC8H065DI ECOPACK2 compliant?
  10. What is the typical package capacitance of the STPSC8H065DI?

    The typical package capacitance is 7 pF.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$3.65
224

Please send RFQ , we will respond immediately.

Same Series
STPSC8H065B-TR
STPSC8H065B-TR
DIODE SCHOTTKY 650V 8A DPAK
STPSC8H065D
STPSC8H065D
DIODE SCHOTTKY 650V 8A TO220AC
STPSC8H065G-TR
STPSC8H065G-TR
DIODE SCHOTTKY 650V 8A D2PAK

Similar Products

Part Number STPSC8H065DI STPSC4H065DI STPSC6H065DI STPSC8H065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 8A 4A 6A 8A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A 1.75 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V 40 µA @ 650 V 60 µA @ 650 V 80 µA @ 650 V
Capacitance @ Vr, F - - - 414pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN