STPSC8H065DI
  • Share:

STMicroelectronics STPSC8H065DI

Manufacturer No:
STPSC8H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC8H065DI is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics using a silicon carbide substrate. This 8 A, 650 V SiC diode is designed with a wide band gap material, enabling a Schottky diode structure with a 650 V rating. The Schottky construction ensures no reverse recovery charge and negligible ringing patterns at turn-off, with minimal capacitive turn-off behavior that is independent of temperature. This diode is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability and robustness during transient phases.

Key Specifications

Parameter Symbol Value Unit
Average Forward Current IF(AV) 8 A
Repetitive Peak Reverse Voltage VRRM 650 V
Typical Forward Voltage Drop VF(typ.) 1.38 V
Maximum Junction Temperature Tj(max.) 175 °C
Forward RMS Current IF(RMS) 22 A
Surge Non-Repetitive Forward Current IFSM 75 (tp = 10 ms, Tc = 25 °C) A
Insulated Voltage Vins 2500 Vrms
Typical Package Capacitance Cp 7 pF

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins with 2500 Vrms insulated voltage and 7 pF typical package capacitance
  • Power efficient product
  • ECOPACK2 compliant component
  • Low drop forward voltage

Applications

  • Switch mode power supply
  • Power Factor Correction (PFC)
  • Boost PFC
  • Bootstrap diode
  • LLC clamping function
  • High frequency inverter applications
  • DC-DC converters
  • LLC topologies

Q & A

  1. What is the maximum forward current of the STPSC8H065DI?

    The maximum average forward current is 8 A.

  2. What is the repetitive peak reverse voltage of the STPSC8H065DI?

    The repetitive peak reverse voltage is 650 V.

  3. What is the typical forward voltage drop of the STPSC8H065DI?

    The typical forward voltage drop is 1.38 V.

  4. What is the maximum junction temperature of the STPSC8H065DI?

    The maximum junction temperature is 175 °C.

  5. Does the STPSC8H065DI have any reverse recovery charge?

    No, the STPSC8H065DI has no reverse recovery charge in the application current range.

  6. Is the switching behavior of the STPSC8H065DI temperature-dependent?

    No, the switching behavior is independent of temperature.

  7. What are the typical applications of the STPSC8H065DI?

    Typical applications include switch mode power supply, PFC, boost PFC, bootstrap diode, LLC clamping function, and high frequency inverter applications.

  8. What is the insulated voltage of the TO-220AC Ins package?

    The insulated voltage is 2500 Vrms.

  9. Is the STPSC8H065DI ECOPACK2 compliant?
  10. What is the typical package capacitance of the STPSC8H065DI?

    The typical package capacitance is 7 pF.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$3.65
224

Please send RFQ , we will respond immediately.

Same Series
STPSC8H065B-TR
STPSC8H065B-TR
DIODE SCHOTTKY 650V 8A DPAK
STPSC8H065D
STPSC8H065D
DIODE SCHOTTKY 650V 8A TO220AC
STPSC8H065G-TR
STPSC8H065G-TR
DIODE SCHOTTKY 650V 8A D2PAK

Similar Products

Part Number STPSC8H065DI STPSC4H065DI STPSC6H065DI STPSC8H065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 8A 4A 6A 8A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A 1.75 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V 40 µA @ 650 V 60 µA @ 650 V 80 µA @ 650 V
Capacitance @ Vr, F - - - 414pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3