STPSC8H065DI
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STMicroelectronics STPSC8H065DI

Manufacturer No:
STPSC8H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 650V 8A TO220AC
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STPSC8H065DI is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics using a silicon carbide substrate. This 8 A, 650 V SiC diode is designed with a wide band gap material, enabling a Schottky diode structure with a 650 V rating. The Schottky construction ensures no reverse recovery charge and negligible ringing patterns at turn-off, with minimal capacitive turn-off behavior that is independent of temperature. This diode is particularly suited for use in Power Factor Correction (PFC) applications and enhances performance in hard switching conditions due to its high forward surge capability and robustness during transient phases.

Key Specifications

Parameter Symbol Value Unit
Average Forward Current IF(AV) 8 A
Repetitive Peak Reverse Voltage VRRM 650 V
Typical Forward Voltage Drop VF(typ.) 1.38 V
Maximum Junction Temperature Tj(max.) 175 °C
Forward RMS Current IF(RMS) 22 A
Surge Non-Repetitive Forward Current IFSM 75 (tp = 10 ms, Tc = 25 °C) A
Insulated Voltage Vins 2500 Vrms
Typical Package Capacitance Cp 7 pF

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins with 2500 Vrms insulated voltage and 7 pF typical package capacitance
  • Power efficient product
  • ECOPACK2 compliant component
  • Low drop forward voltage

Applications

  • Switch mode power supply
  • Power Factor Correction (PFC)
  • Boost PFC
  • Bootstrap diode
  • LLC clamping function
  • High frequency inverter applications
  • DC-DC converters
  • LLC topologies

Q & A

  1. What is the maximum forward current of the STPSC8H065DI?

    The maximum average forward current is 8 A.

  2. What is the repetitive peak reverse voltage of the STPSC8H065DI?

    The repetitive peak reverse voltage is 650 V.

  3. What is the typical forward voltage drop of the STPSC8H065DI?

    The typical forward voltage drop is 1.38 V.

  4. What is the maximum junction temperature of the STPSC8H065DI?

    The maximum junction temperature is 175 °C.

  5. Does the STPSC8H065DI have any reverse recovery charge?

    No, the STPSC8H065DI has no reverse recovery charge in the application current range.

  6. Is the switching behavior of the STPSC8H065DI temperature-dependent?

    No, the switching behavior is independent of temperature.

  7. What are the typical applications of the STPSC8H065DI?

    Typical applications include switch mode power supply, PFC, boost PFC, bootstrap diode, LLC clamping function, and high frequency inverter applications.

  8. What is the insulated voltage of the TO-220AC Ins package?

    The insulated voltage is 2500 Vrms.

  9. Is the STPSC8H065DI ECOPACK2 compliant?
  10. What is the typical package capacitance of the STPSC8H065DI?

    The typical package capacitance is 7 pF.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC8H065DI STPSC4H065DI STPSC6H065DI STPSC8H065D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 8A 4A 6A 8A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A 1.75 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V 40 µA @ 650 V 60 µA @ 650 V 80 µA @ 650 V
Capacitance @ Vr, F - - - 414pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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