Overview
The STPSC4H065D is an ultrahigh performance power Schottky diode manufactured by STMicroelectronics. This 4 A, 650 V SiC diode is built using a silicon carbide substrate, which allows for a wide band gap material design. This construction enables the diode to operate with a 650 V rating and exhibits no reverse recovery charge at turn-off, resulting in negligible ringing patterns. The minimal capacitive turn-off behavior is independent of temperature, making it highly reliable in various operating conditions.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Repetitive Peak Reverse Voltage (VRRM) | 650 | V |
| Average Forward Current (IF(AV)) | 4 | A |
| Forward RMS Current (IF(RMS)) | 22 | A |
| Surge Non-Repetitive Forward Current (IFSM) | 38 (tp = 10 ms sinusoidal, Tc = 25 °C) | A |
| Junction Temperature (Tj max) | 175 | °C |
| Insulated Voltage (TO-220AC Ins) | 2500 | V RMS |
| Typical Package Capacitance | 7 | pF |
Key Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- Insulated package TO-220AC Ins with 2500 V RMS insulated voltage
- Typical package capacitance of 7 pF
- Power efficient product
- ECOPACK®2 compliant component
Applications
- Switch mode power supply
- Power Factor Correction (PFC)
- DC-DC converters
- LLC topologies
- Boost diode applications
Q & A
- What is the maximum repetitive peak reverse voltage of the STPSC4H065D?
650 V
- What is the average forward current rating of the STPSC4H065D?
4 A
- What is the junction temperature maximum for the STPSC4H065D?
175 °C
- Does the STPSC4H065D exhibit reverse recovery charge?
No, it does not exhibit reverse recovery charge in the application current range.
- What is the insulated voltage rating for the TO-220AC Ins package?
2500 V RMS
- Is the STPSC4H065D power efficient?
- What are some common applications for the STPSC4H065D?
Switch mode power supply, PFC, DC-DC converters, LLC topologies, and boost diode applications.
- Is the STPSC4H065D ECOPACK®2 compliant?
- What is the typical package capacitance of the STPSC4H065D?
7 pF
- How does the silicon carbide substrate benefit the performance of the STPSC4H065D?
The silicon carbide substrate allows for a wide band gap material design, enabling the diode to operate with a high voltage rating and minimal capacitive turn-off behavior independent of temperature.
