BAS21E6433HTMA1
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Infineon Technologies BAS21E6433HTMA1

Manufacturer No:
BAS21E6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The BAS21E6433HTMA1 is a silicon switching diode produced by Infineon Technologies. This component is designed for high-speed switching applications, making it suitable for a variety of electronic circuits that require fast and reliable switching performance. The diode is part of the BAS21 series, known for its high efficiency and durability in various electrical systems.

Key Specifications

ParameterValue
VRRM (Maximum Reverse Voltage)200 V
IF(AV) (Average Forward Current)0.25 A
VF (Forward Voltage Drop)1.25 V (typical at IF = 0.1 A)
trr (Reverse Recovery Time)4 ns (typical)
TJ (Junction Temperature)-55°C to 150°C
PackageSOD-123

Key Features

  • High-speed switching capability, making it ideal for high-frequency applications.
  • Low forward voltage drop, reducing power losses in the circuit.
  • Fast reverse recovery time, ensuring minimal switching delays.
  • High junction temperature range, enhancing reliability in diverse operating conditions.
  • Compact SOD-123 package, suitable for space-constrained designs.

Applications

  • High-frequency switching circuits.
  • Power supplies and DC-DC converters.
  • Audio and video equipment.
  • Automotive and industrial control systems.
  • General-purpose rectification and switching applications.

Q & A

  1. What is the maximum reverse voltage of the BAS21E6433HTMA1?
    The maximum reverse voltage (VRRM) is 200 V.
  2. What is the average forward current rating of this diode?
    The average forward current (IF(AV)) is 0.25 A.
  3. What is the typical forward voltage drop of the BAS21E6433HTMA1?
    The typical forward voltage drop (VF) is 1.25 V at IF = 0.1 A.
  4. What is the reverse recovery time of this diode?
    The reverse recovery time (trr) is typically 4 ns.
  5. What is the junction temperature range for the BAS21E6433HTMA1?
    The junction temperature range is -55°C to 150°C.
  6. In what package is the BAS21E6433HTMA1 available?
    The BAS21E6433HTMA1 is available in the SOD-123 package.
  7. What are some common applications for the BAS21E6433HTMA1?
    Common applications include high-frequency switching circuits, power supplies, audio and video equipment, automotive and industrial control systems, and general-purpose rectification and switching.
  8. Why is the BAS21E6433HTMA1 suitable for high-speed switching applications?
    It is suitable due to its fast reverse recovery time and low forward voltage drop, which are critical for high-speed switching performance.
  9. Where can I find detailed specifications for the BAS21E6433HTMA1?
    Detailed specifications can be found in the datasheet available from sources like Digi-Key, Mouser, and the official Infineon Technologies website.
  10. What is the significance of the SOD-123 package for the BAS21E6433HTMA1?
    The SOD-123 package is compact and suitable for space-constrained designs, making it ideal for modern electronic circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
Operating Temperature - Junction:150°C (Max)
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