BAS21E6359HTMA1
  • Share:

Infineon Technologies BAS21E6359HTMA1

Manufacturer No:
BAS21E6359HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GP 200V 250MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21E6359HTMA1 is a high voltage switching diode produced by Infineon Technologies. This device is designed for high-speed switching applications and is housed in a SOD-323 surface mount package, making it ideal for automated insertion. The diode is AEC-Q101 qualified and PPAP capable, which makes it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and BFR-free, ensuring compliance with RoHS standards.

Key Specifications

Parameter Symbol Value Unit
Continuous Reverse Voltage VR 250 V
Repetitive Peak Reverse Voltage VRRM 250 V
Peak Forward Current IF 200 mA
Non-Repetitive Peak Forward Surge Current (t = 10 µs) IFSM(surge) 2.5 A
Total Device Dissipation (TA = 25°C) PD 200 mW
Junction Temperature TJ -55 to +150 °C
Storage Temperature Tstg -65 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 635 °C/W
Reverse Breakdown Voltage (IBR = 100 µA) V(BR) 250 V
Forward Voltage (IF = 100 mA) VF 1.0 - 1.25 V
Diode Capacitance (VR = 0 V, f = 1 MHz) CD 5.0 pF
Reverse Recovery Time (IF = IR = 30 mA, RL = 100 Ω) trr 50 ns

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  • Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.
  • High breakdown voltage of 250 V.
  • High-speed switching capabilities.
  • SOD-323 surface mount package for automated insertion.
  • Low forward voltage drop (1.0 - 1.25 V at 100 mA).
  • Low reverse recovery time of 50 ns.

Applications

  • High-speed switching applications.
  • Automotive systems requiring high reliability and unique site and control change requirements.
  • General-purpose switching in electronic circuits.
  • Rectifier circuits in power supplies.
  • Clamping and protection circuits.

Q & A

  1. What is the maximum continuous reverse voltage of the BAS21E6359HTMA1 diode?

    The maximum continuous reverse voltage is 250 V.

  2. What is the peak forward current rating of the BAS21E6359HTMA1?

    The peak forward current rating is 200 mA.

  3. Is the BAS21E6359HTMA1 RoHS compliant?
  4. What is the junction temperature range for the BAS21E6359HTMA1?

    The junction temperature range is -55°C to +150°C.

  5. What is the thermal resistance, junction-to-ambient, for the BAS21E6359HTMA1?

    The thermal resistance, junction-to-ambient, is 635 °C/W.

  6. What is the reverse recovery time of the BAS21E6359HTMA1?

    The reverse recovery time is 50 ns.

  7. What package type is the BAS21E6359HTMA1 available in?

    The diode is available in a SOD-323 surface mount package.

  8. Is the BAS21E6359HTMA1 suitable for automotive applications?
  9. What is the forward voltage drop at 100 mA for the BAS21E6359HTMA1?

    The forward voltage drop at 100 mA is between 1.0 V and 1.25 V.

  10. What is the diode capacitance of the BAS21E6359HTMA1 at 1 MHz?

    The diode capacitance is 5.0 pF at 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
38

Please send RFQ , we will respond immediately.

Same Series
BAS21UE6327HTSA1
BAS21UE6327HTSA1
DIODE ARRAY GP 200V 250MA SC74-6
BAS21UE6433HTMA1
BAS21UE6433HTMA1
DIODE ARRAY GP 200V 250MA SC74-6
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
DIODE GEN PURP 200V 250MA SOD323
BAS21E6327HTSA1
BAS21E6327HTSA1
DIODE GP 200V 250MA SOT23-3
BAS21E6433HTMA1
BAS21E6433HTMA1
DIODE GEN PURP 200V 250MA SOT23
BAS2103WE6433HTMA1
BAS2103WE6433HTMA1
DIODE GEN PURP 200V 250MA SOD323
BAS21E6359HTMA1
BAS21E6359HTMA1
DIODE GP 200V 250MA SOT23-3

Related Product By Categories

NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAV70WE6327BTSA1
BAV70WE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BAT54B5003
BAT54B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC
AUIR3315STRL
AUIR3315STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK
S34ML01G200TFI000
S34ML01G200TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I