BAS21E6359HTMA1
  • Share:

Infineon Technologies BAS21E6359HTMA1

Manufacturer No:
BAS21E6359HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GP 200V 250MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21E6359HTMA1 is a high voltage switching diode produced by Infineon Technologies. This device is designed for high-speed switching applications and is housed in a SOD-323 surface mount package, making it ideal for automated insertion. The diode is AEC-Q101 qualified and PPAP capable, which makes it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and BFR-free, ensuring compliance with RoHS standards.

Key Specifications

Parameter Symbol Value Unit
Continuous Reverse Voltage VR 250 V
Repetitive Peak Reverse Voltage VRRM 250 V
Peak Forward Current IF 200 mA
Non-Repetitive Peak Forward Surge Current (t = 10 µs) IFSM(surge) 2.5 A
Total Device Dissipation (TA = 25°C) PD 200 mW
Junction Temperature TJ -55 to +150 °C
Storage Temperature Tstg -65 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 635 °C/W
Reverse Breakdown Voltage (IBR = 100 µA) V(BR) 250 V
Forward Voltage (IF = 100 mA) VF 1.0 - 1.25 V
Diode Capacitance (VR = 0 V, f = 1 MHz) CD 5.0 pF
Reverse Recovery Time (IF = IR = 30 mA, RL = 100 Ω) trr 50 ns

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  • Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.
  • High breakdown voltage of 250 V.
  • High-speed switching capabilities.
  • SOD-323 surface mount package for automated insertion.
  • Low forward voltage drop (1.0 - 1.25 V at 100 mA).
  • Low reverse recovery time of 50 ns.

Applications

  • High-speed switching applications.
  • Automotive systems requiring high reliability and unique site and control change requirements.
  • General-purpose switching in electronic circuits.
  • Rectifier circuits in power supplies.
  • Clamping and protection circuits.

Q & A

  1. What is the maximum continuous reverse voltage of the BAS21E6359HTMA1 diode?

    The maximum continuous reverse voltage is 250 V.

  2. What is the peak forward current rating of the BAS21E6359HTMA1?

    The peak forward current rating is 200 mA.

  3. Is the BAS21E6359HTMA1 RoHS compliant?
  4. What is the junction temperature range for the BAS21E6359HTMA1?

    The junction temperature range is -55°C to +150°C.

  5. What is the thermal resistance, junction-to-ambient, for the BAS21E6359HTMA1?

    The thermal resistance, junction-to-ambient, is 635 °C/W.

  6. What is the reverse recovery time of the BAS21E6359HTMA1?

    The reverse recovery time is 50 ns.

  7. What package type is the BAS21E6359HTMA1 available in?

    The diode is available in a SOD-323 surface mount package.

  8. Is the BAS21E6359HTMA1 suitable for automotive applications?
  9. What is the forward voltage drop at 100 mA for the BAS21E6359HTMA1?

    The forward voltage drop at 100 mA is between 1.0 V and 1.25 V.

  10. What is the diode capacitance of the BAS21E6359HTMA1 at 1 MHz?

    The diode capacitance is 5.0 pF at 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
38

Please send RFQ , we will respond immediately.

Same Series
BAS21UE6327HTSA1
BAS21UE6327HTSA1
DIODE ARRAY GP 200V 250MA SC74-6
BAS21UE6433HTMA1
BAS21UE6433HTMA1
DIODE ARRAY GP 200V 250MA SC74-6
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
DIODE GEN PURP 200V 250MA SOD323
BAS21E6327HTSA1
BAS21E6327HTSA1
DIODE GP 200V 250MA SOT23-3
BAS21E6433HTMA1
BAS21E6433HTMA1
DIODE GEN PURP 200V 250MA SOT23
BAS2103WE6433HTMA1
BAS2103WE6433HTMA1
DIODE GEN PURP 200V 250MA SOD323
BAS21E6359HTMA1
BAS21E6359HTMA1
DIODE GP 200V 250MA SOT23-3

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

BAS70-04B5000
BAS70-04B5000
Infineon Technologies
SCHOTTKY DIODE
BAV99SH6433XTMA1
BAV99SH6433XTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAV 99 B5003
BAV 99 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS16-03WE6327
BAS16-03WE6327
Infineon Technologies
RECTIFIER DIODE, 0.25A, 80V
BC857SH6433XTMA1
BC857SH6433XTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC860BWE6327
BC860BWE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I