BAV21W-HE3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAV21W-HE3-18

Manufacturer No:
BAV21W-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21W-HE3-18 is a general-purpose small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAV21W series, known for its reliability and versatility in various electronic applications. It is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments. The diode is packaged in a SOD-123 case, which is RoHS-compliant and meets UL 94 V-0 flammability ratings.

Key Specifications

Parameter Test Condition Value Unit
Continuous Reverse Voltage (VR) Tamb = 25 °C 200 V
Repetitive Peak Reverse Voltage (VRRM) Tamb = 25 °C 250 V
DC Forward Current (IF) Tamb = 25 °C 300 mA
Rectified Current (Average) Half Wave Rectification Tamb = 25 °C 200 mA
Repetitive Peak Forward Current (IFRM) f ≥ 50 Hz, θ = 180° 625 mA
Surge Forward Current (IFSM) t < 1 s, Tj = 25 °C 1 A
Forward Voltage (VF) IF = 100 mA 1 V
Reverse Leakage Current (IR) VR = 200 V, Tj = 25 °C 100 nA
Dynamic Forward Resistance (rf) IF = 10 mA 5 Ω
Diode Capacitance (CD) VR = 0, f = 1 MHz 0.5 pF
Reverse Recovery Time (trr) IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω 50 ns
Junction Temperature (Tj) 150 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Operating Temperature Range (Top) -55 to +150 °C

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other demanding applications.
  • RoHS Compliant: Meets environmental regulations.
  • UL 94 V-0 Flammability Rating: Ensures safety in various environments.
  • Low Forward Voltage: VF = 1 V at IF = 100 mA, making it efficient for switching applications.
  • Low Reverse Leakage Current: IR = 100 nA at VR = 200 V, reducing power loss.
  • Fast Switching Times: Reverse recovery time (trr) of 50 ns, suitable for high-frequency applications.
  • High Surge Current Capability: IFSM = 1 A for t < 1 s, providing robustness against transient conditions.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
  • Industrial Control Systems: Suitable for general-purpose switching and rectification in industrial environments.
  • Consumer Electronics: Used in various consumer electronic devices requiring reliable and efficient switching diodes.
  • Power Supplies: Can be used in power supply circuits for rectification and voltage regulation.
  • Signal Processing: Applicable in signal switching and polarity protection circuits.

Q & A

  1. What is the continuous reverse voltage rating of the BAV21W-HE3-18 diode?

    The continuous reverse voltage rating is 200 V.

  2. Is the BAV21W-HE3-18 diode AEC-Q101 qualified?
  3. What is the maximum forward current rating of the BAV21W-HE3-18 diode?

    The maximum DC forward current rating is 300 mA.

  4. What is the reverse recovery time of the BAV21W-HE3-18 diode?

    The reverse recovery time (trr) is 50 ns.

  5. What is the junction temperature range of the BAV21W-HE3-18 diode?

    The junction temperature range is -55 to +150 °C.

  6. Is the BAV21W-HE3-18 diode RoHS compliant?
  7. What is the forward voltage drop of the BAV21W-HE3-18 diode at 100 mA?

    The forward voltage drop (VF) at 100 mA is 1 V.

  8. What is the surge forward current capability of the BAV21W-HE3-18 diode?

    The surge forward current (IFSM) is 1 A for t < 1 s.

  9. What is the storage temperature range for the BAV21W-HE3-18 diode?

    The storage temperature range is -65 to +150 °C.

  10. In what package is the BAV21W-HE3-18 diode available?

    The BAV21W-HE3-18 diode is available in a SOD-123 package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.31
622

Please send RFQ , we will respond immediately.

Same Series
BAV21W-E3-08
BAV21W-E3-08
DIODE GEN PURP 200V 250MA SOD123
BAV20W-HE3-18
BAV20W-HE3-18
DIODE GEN PURP 150V 250MA SOD123
BAV20W-E3-08
BAV20W-E3-08
DIODE GEN PURP 150V 250MA SOD123
BAV20W-HE3-08
BAV20W-HE3-08
DIODE GEN PURP 150V 250MA SOD123
BAV20W-E3-18
BAV20W-E3-18
DIODE GEN PURP 150V 250MA SOD123
BAV21W-E3-18
BAV21W-E3-18
DIODE GEN PURP 200V 250MA SOD123
BAV19W-E3-08
BAV19W-E3-08
DIODE GEN PURP 100V 250MA SOD123
BAV19W-E3-18
BAV19W-E3-18
DIODE GEN PURP 100V 250MA SOD123
BAV19W-HE3-18
BAV19W-HE3-18
DIODE GEN PURP 100V 250MA SOD123
BAV21W-HE3-18
BAV21W-HE3-18
DIODE GEN PURP 200V 250MA SOD123
BAV19W-HE3-08
BAV19W-HE3-08
DIODE GEN PURP 100V 250MA SOD123

Similar Products

Part Number BAV21W-HE3-18 BAV21WS-HE3-18 BAV20W-HE3-18 BAV21W-E3-18 BAV21W-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1 V @ 100 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 150 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SC-76, SOD-323 SOD-123 SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-323 SOD-123 SOD-123 SOD-123
Operating Temperature - Junction 175°C (Max) 150°C (Max) 150°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

SM6T100A-E3/52
SM6T100A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM15T30A-M3/57T
SM15T30A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM15T30CAHM3_A/H
SM15T30CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
BAT54S-E3-08
BAT54S-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54C-HE3-08
BAT54C-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAS16-E3-18
BAS16-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
BAT42W-G3-08
BAT42W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C18-E3-08
BZX84C18-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84C3V9-HE3-18
BZX84C3V9-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX84C68-HE3-18
BZX84C68-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 68V 300MW SOT23-3
BZX84C10-G3-08
BZX84C10-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84B4V7-G3-18
BZX84B4V7-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3