BAV21W-HE3-18
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Vishay General Semiconductor - Diodes Division BAV21W-HE3-18

Manufacturer No:
BAV21W-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21W-HE3-18 is a general-purpose small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAV21W series, known for its reliability and versatility in various electronic applications. It is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments. The diode is packaged in a SOD-123 case, which is RoHS-compliant and meets UL 94 V-0 flammability ratings.

Key Specifications

Parameter Test Condition Value Unit
Continuous Reverse Voltage (VR) Tamb = 25 °C 200 V
Repetitive Peak Reverse Voltage (VRRM) Tamb = 25 °C 250 V
DC Forward Current (IF) Tamb = 25 °C 300 mA
Rectified Current (Average) Half Wave Rectification Tamb = 25 °C 200 mA
Repetitive Peak Forward Current (IFRM) f ≥ 50 Hz, θ = 180° 625 mA
Surge Forward Current (IFSM) t < 1 s, Tj = 25 °C 1 A
Forward Voltage (VF) IF = 100 mA 1 V
Reverse Leakage Current (IR) VR = 200 V, Tj = 25 °C 100 nA
Dynamic Forward Resistance (rf) IF = 10 mA 5 Ω
Diode Capacitance (CD) VR = 0, f = 1 MHz 0.5 pF
Reverse Recovery Time (trr) IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω 50 ns
Junction Temperature (Tj) 150 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Operating Temperature Range (Top) -55 to +150 °C

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other demanding applications.
  • RoHS Compliant: Meets environmental regulations.
  • UL 94 V-0 Flammability Rating: Ensures safety in various environments.
  • Low Forward Voltage: VF = 1 V at IF = 100 mA, making it efficient for switching applications.
  • Low Reverse Leakage Current: IR = 100 nA at VR = 200 V, reducing power loss.
  • Fast Switching Times: Reverse recovery time (trr) of 50 ns, suitable for high-frequency applications.
  • High Surge Current Capability: IFSM = 1 A for t < 1 s, providing robustness against transient conditions.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
  • Industrial Control Systems: Suitable for general-purpose switching and rectification in industrial environments.
  • Consumer Electronics: Used in various consumer electronic devices requiring reliable and efficient switching diodes.
  • Power Supplies: Can be used in power supply circuits for rectification and voltage regulation.
  • Signal Processing: Applicable in signal switching and polarity protection circuits.

Q & A

  1. What is the continuous reverse voltage rating of the BAV21W-HE3-18 diode?

    The continuous reverse voltage rating is 200 V.

  2. Is the BAV21W-HE3-18 diode AEC-Q101 qualified?
  3. What is the maximum forward current rating of the BAV21W-HE3-18 diode?

    The maximum DC forward current rating is 300 mA.

  4. What is the reverse recovery time of the BAV21W-HE3-18 diode?

    The reverse recovery time (trr) is 50 ns.

  5. What is the junction temperature range of the BAV21W-HE3-18 diode?

    The junction temperature range is -55 to +150 °C.

  6. Is the BAV21W-HE3-18 diode RoHS compliant?
  7. What is the forward voltage drop of the BAV21W-HE3-18 diode at 100 mA?

    The forward voltage drop (VF) at 100 mA is 1 V.

  8. What is the surge forward current capability of the BAV21W-HE3-18 diode?

    The surge forward current (IFSM) is 1 A for t < 1 s.

  9. What is the storage temperature range for the BAV21W-HE3-18 diode?

    The storage temperature range is -65 to +150 °C.

  10. In what package is the BAV21W-HE3-18 diode available?

    The BAV21W-HE3-18 diode is available in a SOD-123 package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:175°C (Max)
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Similar Products

Part Number BAV21W-HE3-18 BAV21WS-HE3-18 BAV20W-HE3-18 BAV21W-E3-18 BAV21W-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V 200 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1 V @ 100 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 150 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SC-76, SOD-323 SOD-123 SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-323 SOD-123 SOD-123 SOD-123
Operating Temperature - Junction 175°C (Max) 150°C (Max) 150°C (Max) 175°C (Max) 175°C (Max)

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