BAS16-E3-18
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Vishay General Semiconductor - Diodes Division BAS16-E3-18

Manufacturer No:
BAS16-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BAS16-E3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is available in the SOT-23-3 surface mount package. It is RoHS-compliant and suitable for automatic insertion, making it ideal for various electronic circuits requiring fast and reliable diode performance.

Key Specifications

Parameter Test Condition Symbol Value Unit
Non repetitive peak reverse voltage - VRM 100 V
Repetitive peak reverse voltage / Working peak reverse voltage / DC blocking voltage - VRRM = VRWM = VR 75 V
Peak forward surge current (tp = 1 s) - IFSM 1 A
Peak forward surge current (tp = 1 μs) - IFSM 2 A
Average forward current (Half wave rectification with resistive load and f ≥ 50 Hz) - IF(AV) 250 mA
Forward current - IF 350 mA
Power dissipation (On FR-4 board with recommended soldering footprint) - Ptot 270 mW
Thermal resistance junction to ambient air - RthJA 460 K/W
Junction temperature - Tj 125 °C
Storage temperature range - Tstg -65 to +150 °C
Operating temperature range - Top -55 to +150 °C
Forward voltage (IF = 10 mA) - VF 0.855 V
Reverse current (VR = 75 V, Tj = 150 °C) - IR 50 μA
Diode capacitance (VR = 0, f = 1 MHz) - CD 1.5 pF
Reverse recovery time IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 Ω trr 6 ns

Key Features

  • Silicon epitaxial planar diode with ultra-fast switching speed (≤ 4 ns)
  • Surface mount package (SOT-23-3) ideal for automatic insertion
  • High conductance and low forward voltage drop
  • AEC-Q101 qualified versions available (BAS16-HE3_A-18)
  • RoHS-compliant
  • High reliability and stability over a wide temperature range (-55 °C to +150 °C)

Applications

  • High-speed switching circuits
  • Rectifier and voltage regulation applications
  • Automotive and industrial control systems
  • Consumer electronics requiring fast and reliable diode performance
  • General-purpose switching and rectification in various electronic circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BAS16-E3-18 diode?

    The maximum repetitive peak reverse voltage (VRRM) is 75 V.

  2. What is the average forward current rating of the BAS16-E3-18 diode?

    The average forward current (IF(AV)) is 250 mA for half wave rectification with resistive load and f ≥ 50 Hz.

  3. What is the thermal resistance junction to ambient air for the BAS16-E3-18 diode?

    The thermal resistance junction to ambient air (RthJA) is 460 K/W on an FR-4 board with the recommended soldering footprint.

  4. Is the BAS16-E3-18 diode RoHS-compliant?
  5. What is the reverse recovery time of the BAS16-E3-18 diode?
  6. What are the operating temperature ranges for the BAS16-E3-18 diode?
  7. Is the BAS16-E3-18 diode suitable for automotive applications?
  8. What is the package type of the BAS16-E3-18 diode?
  9. What is the forward voltage drop at 10 mA for the BAS16-E3-18 diode?
  10. What is the diode capacitance of the BAS16-E3-18 diode at 1 MHz?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
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In Stock

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Same Series
BAS16-HE3-08
BAS16-HE3-08
DIODE GEN PURP 75V 150MA SOT23
BAS16-HE3-18
BAS16-HE3-18
DIODE GEN PURP 75V 150MA SOT23

Similar Products

Part Number BAS16-E3-18 BAS16D-E3-18 BAS16-G3-18 BAS16-HE3-18 BAS16-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 250mA 150mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOD-123 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOD-123 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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