Overview
The BAS16-E3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is available in the SOT-23-3 surface mount package. It is RoHS-compliant and suitable for automatic insertion, making it ideal for various electronic circuits requiring fast and reliable diode performance.
Key Specifications
Parameter | Test Condition | Symbol | Value | Unit |
---|---|---|---|---|
Non repetitive peak reverse voltage | - | VRM | 100 | V |
Repetitive peak reverse voltage / Working peak reverse voltage / DC blocking voltage | - | VRRM = VRWM = VR | 75 | V |
Peak forward surge current (tp = 1 s) | - | IFSM | 1 | A |
Peak forward surge current (tp = 1 μs) | - | IFSM | 2 | A |
Average forward current (Half wave rectification with resistive load and f ≥ 50 Hz) | - | IF(AV) | 250 | mA |
Forward current | - | IF | 350 | mA |
Power dissipation (On FR-4 board with recommended soldering footprint) | - | Ptot | 270 | mW |
Thermal resistance junction to ambient air | - | RthJA | 460 | K/W |
Junction temperature | - | Tj | 125 | °C |
Storage temperature range | - | Tstg | -65 to +150 | °C |
Operating temperature range | - | Top | -55 to +150 | °C |
Forward voltage (IF = 10 mA) | - | VF | 0.855 | V |
Reverse current (VR = 75 V, Tj = 150 °C) | - | IR | 50 | μA |
Diode capacitance (VR = 0, f = 1 MHz) | - | CD | 1.5 | pF |
Reverse recovery time | IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 Ω | trr | 6 | ns |
Key Features
- Silicon epitaxial planar diode with ultra-fast switching speed (≤ 4 ns)
- Surface mount package (SOT-23-3) ideal for automatic insertion
- High conductance and low forward voltage drop
- AEC-Q101 qualified versions available (BAS16-HE3_A-18)
- RoHS-compliant
- High reliability and stability over a wide temperature range (-55 °C to +150 °C)
Applications
- High-speed switching circuits
- Rectifier and voltage regulation applications
- Automotive and industrial control systems
- Consumer electronics requiring fast and reliable diode performance
- General-purpose switching and rectification in various electronic circuits
Q & A
- What is the maximum repetitive peak reverse voltage of the BAS16-E3-18 diode?
The maximum repetitive peak reverse voltage (VRRM) is 75 V.
- What is the average forward current rating of the BAS16-E3-18 diode?
The average forward current (IF(AV)) is 250 mA for half wave rectification with resistive load and f ≥ 50 Hz.
- What is the thermal resistance junction to ambient air for the BAS16-E3-18 diode?
The thermal resistance junction to ambient air (RthJA) is 460 K/W on an FR-4 board with the recommended soldering footprint.
- Is the BAS16-E3-18 diode RoHS-compliant?
- What is the reverse recovery time of the BAS16-E3-18 diode?
- What are the operating temperature ranges for the BAS16-E3-18 diode?
- Is the BAS16-E3-18 diode suitable for automotive applications?
- What is the package type of the BAS16-E3-18 diode?
- What is the forward voltage drop at 10 mA for the BAS16-E3-18 diode?
- What is the diode capacitance of the BAS16-E3-18 diode at 1 MHz?
- Is the BAS16-E3-18 diode suitable for automotive applications?