BAS16D-E3-18
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Vishay General Semiconductor - Diodes Division BAS16D-E3-18

Manufacturer No:
BAS16D-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
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Product Introduction

Overview

The BAS16D-E3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is known for its fast recovery time and low forward voltage drop. It is part of the BAS16 series, which offers a range of diodes with various package options and ratings. The BAS16D-E3-18 is specifically packaged in the SOD-123 (TO-236) surface mount format, making it suitable for a wide range of electronic circuits where space is a concern.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage VRRM VR 75 V
Repetitive Peak Reverse Voltage VRRM VRRM 100 V
Forward Current (Continuous) IF(AV) IF 300 mA
Non-Repetitive Peak Forward Current (t = 1 μs) IFSM IFSM 2 A
Power Dissipation (On FR-4 board) Ptot Ptot 280 mW
Thermal Resistance Junction to Ambient RthJA RthJA 440 K/W
Junction Temperature Tj Tj -55 to +150 °C
Storage Temperature Range Tstg Tstg -65 to +150 °C
Forward Voltage (IF = 150 mA) VF VF 1.25 V
Reverse Recovery Time trr trr 6 ns

Key Features

  • Fast Switching Diode: The BAS16D-E3-18 is designed for high-speed switching applications with a fast recovery time of 6 ns.
  • Low Forward Voltage Drop: It has a low forward voltage drop, making it efficient for use in various electronic circuits.
  • RoHS Compliant: This diode is RoHS compliant, ensuring it meets environmental standards.
  • AEC-Q101 Qualified: Available in AEC-Q101 qualified versions, making it suitable for automotive applications.
  • Surface Mount Package: Packaged in the SOD-123 (TO-236) format, which is ideal for surface mount technology (SMT) assembly.
  • High Reliability: The diode has a high reliability rating with a junction temperature range of -55 to +150 °C.

Applications

  • Automotive Systems: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Consumer Electronics: Used in various consumer electronic devices such as TVs, radios, and other household appliances.
  • Industrial Control Systems: Applied in industrial control systems for switching and rectification purposes.
  • Telecommunications: Utilized in telecommunications equipment for signal switching and protection.
  • General Purpose Switching: Ideal for general-purpose switching applications in electronic circuits.

Q & A

  1. What is the maximum reverse voltage rating of the BAS16D-E3-18 diode?

    The maximum reverse voltage rating is 75 V, with a repetitive peak reverse voltage of 100 V.

  2. What is the continuous forward current rating of the BAS16D-E3-18?

    The continuous forward current rating is 300 mA.

  3. What is the non-repetitive peak forward current rating for a 1 μs pulse?

    The non-repetitive peak forward current rating for a 1 μs pulse is 2 A.

  4. What is the thermal resistance junction to ambient for the BAS16D-E3-18?

    The thermal resistance junction to ambient is 440 K/W on an FR-4 board with the recommended soldering footprint.

  5. Is the BAS16D-E3-18 RoHS compliant?

    Yes, the BAS16D-E3-18 is RoHS compliant.

  6. What is the package type of the BAS16D-E3-18?

    The package type is SOD-123 (TO-236) surface mount.

  7. What is the forward voltage drop at 150 mA?

    The forward voltage drop at 150 mA is 1.25 V.

  8. What is the reverse recovery time of the BAS16D-E3-18?

    The reverse recovery time is 6 ns.

  9. Is the BAS16D-E3-18 suitable for automotive applications?

    Yes, it is available in AEC-Q101 qualified versions, making it suitable for automotive applications.

  10. What is the storage temperature range for the BAS16D-E3-18?

    The storage temperature range is -65 to +150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
BAS16D-HE3-08
BAS16D-HE3-08
DIODE GEN PURP 75V 250MA SOD123
BAS16D-E3-18
BAS16D-E3-18
DIODE GEN PURP 75V 250MA SOD123
BAS16D-HE3-18
BAS16D-HE3-18
DIODE GEN PURP 75V 250MA SOD123

Similar Products

Part Number BAS16D-E3-18 BAS16D-HE3-18 BAS16D-G3-18 BAS16-E3-18 BAS16D-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 250mA 150mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SOD-123 SOD-123 TO-236-3, SC-59, SOT-23-3 SOD-123
Supplier Device Package SOD-123 SOD-123 SOD-123 SOT-23-3 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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