BAS16D-G3-18
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Vishay General Semiconductor - Diodes Division BAS16D-G3-18

Manufacturer No:
BAS16D-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
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Product Introduction

Overview

The BAS16D-G3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS16D-G series and is known for its ultra-fast switching speed and high conductance. It is designed in a surface mount package, specifically the SOT-123 package, making it ideal for automatic insertion in various electronic circuits. The BAS16D-G3-18 is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding applications.

Key Specifications

Parameter Test Condition Symbol Value Unit
Non-repetitive peak reverse voltage - VRM 100 V
Repetitive peak reverse voltage / Working peak reverse voltage / DC blocking voltage - VRRM / VRWM / VR 75 V
Peak forward surge current (tp = 1 μs) - IFSM 2 A
Average forward current (continuous) - IF(AV) 250 mA
Forward current (continuous) - IF 300 mA
Power dissipation (on FR-4 board) - Ptot 280 mW
Thermal resistance junction to ambient air - RthJA 440 K/W
Junction temperature - Tj 150 °C
Storage temperature range - Tstg -65 to +150 °C
Operating temperature range - Top -55 to +150 °C
Forward voltage (IF = 150 mA) - VF 1.25 V
Reverse recovery time IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 Ω trr 6 ns

Key Features

  • Silicon epitaxial planar diode with ultra-fast switching speed (≤ 4 ns)
  • Surface mount package (SOT-123) ideal for automatic insertion
  • AEC-Q101 qualified, suitable for automotive and other demanding applications
  • High conductance and low forward voltage drop
  • Moisture sensitivity level (MSL) 1
  • Wide operating temperature range (-55°C to +150°C)

Applications

  • Automotive systems due to AEC-Q101 qualification
  • High-frequency switching circuits
  • Rectifier and voltage regulation applications
  • General-purpose switching and signal processing
  • Consumer electronics requiring fast switching diodes

Q & A

  1. What is the maximum reverse voltage of the BAS16D-G3-18 diode?

    The maximum reverse voltage (VRM) is 100 V, and the repetitive peak reverse voltage (VRRM) is 75 V.

  2. What is the average forward current rating of the BAS16D-G3-18?

    The average forward current (IF(AV)) is 250 mA.

  3. What is the thermal resistance junction to ambient air for the BAS16D-G3-18?

    The thermal resistance junction to ambient air (RthJA) is 440 K/W.

  4. Is the BAS16D-G3-18 diode AEC-Q101 qualified?

    Yes, the BAS16D-G3-18 is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the package type of the BAS16D-G3-18 diode?

    The package type is SOT-123, which is a surface mount package.

  6. What is the maximum junction temperature for the BAS16D-G3-18?

    The maximum junction temperature (Tj) is 150°C.

  7. What is the reverse recovery time of the BAS16D-G3-18 diode?

    The reverse recovery time (trr) is 6 ns.

  8. What is the storage temperature range for the BAS16D-G3-18?

    The storage temperature range (Tstg) is -65°C to +150°C.

  9. What is the operating temperature range for the BAS16D-G3-18?

    The operating temperature range (Top) is -55°C to +150°C.

  10. What is the typical forward voltage at 150 mA for the BAS16D-G3-18?

    The typical forward voltage (VF) at 150 mA is 1.25 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number BAS16D-G3-18 BAS16-G3-18 BAS16D-E3-18 BAS16D-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 150mA 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 TO-236-3, SC-59, SOT-23-3 SOD-123 SOD-123
Supplier Device Package SOD-123 SOT-23-3 SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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