BAS16D-G3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS16D-G3-18

Manufacturer No:
BAS16D-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16D-G3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS16D-G series and is known for its ultra-fast switching speed and high conductance. It is designed in a surface mount package, specifically the SOT-123 package, making it ideal for automatic insertion in various electronic circuits. The BAS16D-G3-18 is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding applications.

Key Specifications

Parameter Test Condition Symbol Value Unit
Non-repetitive peak reverse voltage - VRM 100 V
Repetitive peak reverse voltage / Working peak reverse voltage / DC blocking voltage - VRRM / VRWM / VR 75 V
Peak forward surge current (tp = 1 μs) - IFSM 2 A
Average forward current (continuous) - IF(AV) 250 mA
Forward current (continuous) - IF 300 mA
Power dissipation (on FR-4 board) - Ptot 280 mW
Thermal resistance junction to ambient air - RthJA 440 K/W
Junction temperature - Tj 150 °C
Storage temperature range - Tstg -65 to +150 °C
Operating temperature range - Top -55 to +150 °C
Forward voltage (IF = 150 mA) - VF 1.25 V
Reverse recovery time IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 Ω trr 6 ns

Key Features

  • Silicon epitaxial planar diode with ultra-fast switching speed (≤ 4 ns)
  • Surface mount package (SOT-123) ideal for automatic insertion
  • AEC-Q101 qualified, suitable for automotive and other demanding applications
  • High conductance and low forward voltage drop
  • Moisture sensitivity level (MSL) 1
  • Wide operating temperature range (-55°C to +150°C)

Applications

  • Automotive systems due to AEC-Q101 qualification
  • High-frequency switching circuits
  • Rectifier and voltage regulation applications
  • General-purpose switching and signal processing
  • Consumer electronics requiring fast switching diodes

Q & A

  1. What is the maximum reverse voltage of the BAS16D-G3-18 diode?

    The maximum reverse voltage (VRM) is 100 V, and the repetitive peak reverse voltage (VRRM) is 75 V.

  2. What is the average forward current rating of the BAS16D-G3-18?

    The average forward current (IF(AV)) is 250 mA.

  3. What is the thermal resistance junction to ambient air for the BAS16D-G3-18?

    The thermal resistance junction to ambient air (RthJA) is 440 K/W.

  4. Is the BAS16D-G3-18 diode AEC-Q101 qualified?

    Yes, the BAS16D-G3-18 is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the package type of the BAS16D-G3-18 diode?

    The package type is SOT-123, which is a surface mount package.

  6. What is the maximum junction temperature for the BAS16D-G3-18?

    The maximum junction temperature (Tj) is 150°C.

  7. What is the reverse recovery time of the BAS16D-G3-18 diode?

    The reverse recovery time (trr) is 6 ns.

  8. What is the storage temperature range for the BAS16D-G3-18?

    The storage temperature range (Tstg) is -65°C to +150°C.

  9. What is the operating temperature range for the BAS16D-G3-18?

    The operating temperature range (Top) is -55°C to +150°C.

  10. What is the typical forward voltage at 150 mA for the BAS16D-G3-18?

    The typical forward voltage (VF) at 150 mA is 1.25 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
10,695

Please send RFQ , we will respond immediately.

Same Series
1823764
1823764
TERM BLK 4P SIDE ENT 3.81MM PCB
BAS16D-G3-18
BAS16D-G3-18
DIODE GEN PURP 75V 250MA SOD123

Similar Products

Part Number BAS16D-G3-18 BAS16-G3-18 BAS16D-E3-18 BAS16D-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 150mA 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 TO-236-3, SC-59, SOT-23-3 SOD-123 SOD-123
Supplier Device Package SOD-123 SOT-23-3 SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2

Related Product By Brand

SM6T22CA-M3/52
SM6T22CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM6T30CAHE3_A/I
SM6T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T30CAHM3_A/I
SM6T30CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T68CA-M3/57T
SM15T68CA-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAV23C-HE3-18
BAV23C-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
BYW29-200-E3/45
BYW29-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4002GPHE3/54
1N4002GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
BZX84B4V7-E3-08
BZX84B4V7-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX84C4V3-E3-08
BZX84C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84C62-HE3-08
BZX84C62-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX384C2V7-G3-08
BZX384C2V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 200MW SOD323