BAS16D-G3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS16D-G3-18

Manufacturer No:
BAS16D-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16D-G3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS16D-G series and is known for its ultra-fast switching speed and high conductance. It is designed in a surface mount package, specifically the SOT-123 package, making it ideal for automatic insertion in various electronic circuits. The BAS16D-G3-18 is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding applications.

Key Specifications

Parameter Test Condition Symbol Value Unit
Non-repetitive peak reverse voltage - VRM 100 V
Repetitive peak reverse voltage / Working peak reverse voltage / DC blocking voltage - VRRM / VRWM / VR 75 V
Peak forward surge current (tp = 1 μs) - IFSM 2 A
Average forward current (continuous) - IF(AV) 250 mA
Forward current (continuous) - IF 300 mA
Power dissipation (on FR-4 board) - Ptot 280 mW
Thermal resistance junction to ambient air - RthJA 440 K/W
Junction temperature - Tj 150 °C
Storage temperature range - Tstg -65 to +150 °C
Operating temperature range - Top -55 to +150 °C
Forward voltage (IF = 150 mA) - VF 1.25 V
Reverse recovery time IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 Ω trr 6 ns

Key Features

  • Silicon epitaxial planar diode with ultra-fast switching speed (≤ 4 ns)
  • Surface mount package (SOT-123) ideal for automatic insertion
  • AEC-Q101 qualified, suitable for automotive and other demanding applications
  • High conductance and low forward voltage drop
  • Moisture sensitivity level (MSL) 1
  • Wide operating temperature range (-55°C to +150°C)

Applications

  • Automotive systems due to AEC-Q101 qualification
  • High-frequency switching circuits
  • Rectifier and voltage regulation applications
  • General-purpose switching and signal processing
  • Consumer electronics requiring fast switching diodes

Q & A

  1. What is the maximum reverse voltage of the BAS16D-G3-18 diode?

    The maximum reverse voltage (VRM) is 100 V, and the repetitive peak reverse voltage (VRRM) is 75 V.

  2. What is the average forward current rating of the BAS16D-G3-18?

    The average forward current (IF(AV)) is 250 mA.

  3. What is the thermal resistance junction to ambient air for the BAS16D-G3-18?

    The thermal resistance junction to ambient air (RthJA) is 440 K/W.

  4. Is the BAS16D-G3-18 diode AEC-Q101 qualified?

    Yes, the BAS16D-G3-18 is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the package type of the BAS16D-G3-18 diode?

    The package type is SOT-123, which is a surface mount package.

  6. What is the maximum junction temperature for the BAS16D-G3-18?

    The maximum junction temperature (Tj) is 150°C.

  7. What is the reverse recovery time of the BAS16D-G3-18 diode?

    The reverse recovery time (trr) is 6 ns.

  8. What is the storage temperature range for the BAS16D-G3-18?

    The storage temperature range (Tstg) is -65°C to +150°C.

  9. What is the operating temperature range for the BAS16D-G3-18?

    The operating temperature range (Top) is -55°C to +150°C.

  10. What is the typical forward voltage at 150 mA for the BAS16D-G3-18?

    The typical forward voltage (VF) at 150 mA is 1.25 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
10,695

Please send RFQ , we will respond immediately.

Same Series
1823764
1823764
TERM BLK 4P SIDE ENT 3.81MM PCB
BAS16D-G3-18
BAS16D-G3-18
DIODE GEN PURP 75V 250MA SOD123

Similar Products

Part Number BAS16D-G3-18 BAS16-G3-18 BAS16D-E3-18 BAS16D-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 150mA 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 TO-236-3, SC-59, SOT-23-3 SOD-123 SOD-123
Supplier Device Package SOD-123 SOT-23-3 SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK

Related Product By Brand

SM15T200A-M3/57T
SM15T200A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
1N4148WS-HE3-18
1N4148WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
MURS120-E3/5BT
MURS120-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BAT42WS-E3-18
BAT42WS-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BAT54W-G3-18
BAT54W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR420-M3/54
MUR420-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
BZX84C16-E3-08
BZX84C16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84C36-G3-08
BZX84C36-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 300MW SOT23-3
BZX84C7V5-G3-08
BZX84C7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3