BAS16-G3-18
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Vishay General Semiconductor - Diodes Division BAS16-G3-18

Manufacturer No:
BAS16-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The BAS16-G3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is packaged in a SOT-23 (SOD-323) surface mount package, making it ideal for automatic insertion in various electronic circuits.

It is part of the BAS16 series, known for its ultra-fast switching speeds and high conductance, making it suitable for a wide range of applications requiring fast and reliable diode performance.

Key Specifications

Parameter Value Unit
Reverse Voltage (VR) 75 V
Repetitive Peak Reverse Voltage (VRRM) 100 V
Forward Current (Continuous) (IF) 250 mA
Non-Repetitive Peak Forward Surge Current (IFSM) at 1 μs 2 A
Power Dissipation (Ptot) 200 mW
Thermal Resistance Junction to Ambient Air (RthJA) 650 K/W
Junction Temperature (Tj) -55 to +150 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Forward Voltage (VF) at IF = 150 mA 1.25 V
Reverse Recovery Time (trr) 6 ns

Key Features

  • Ultra Fast Switching Speed: The BAS16-G3-18 diode has an ultra-fast switching speed, with a reverse recovery time of 6 ns, making it suitable for high-speed applications.
  • High Conductance: It offers high conductance, ensuring efficient current flow.
  • Surface Mount Package: Packaged in a SOT-23 (SOD-323) surface mount package, ideal for automatic insertion and space-saving designs.
  • AEC-Q101 Qualified: Available in AEC-Q101 qualified versions, making it suitable for automotive applications.
  • Moisture Sensitivity Level (MSL) 1: This diode has a low moisture sensitivity level, reducing the risk of damage during the soldering process.

Applications

  • High-Speed Switching Circuits: Ideal for applications requiring fast switching times, such as in digital circuits, switching power supplies, and high-frequency applications.
  • Automotive Electronics: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Consumer Electronics: Used in various consumer electronic devices where fast and reliable diode performance is necessary.
  • Industrial Control Systems: Applicable in industrial control systems that require high-speed and reliable diode operation.

Q & A

  1. What is the maximum reverse voltage of the BAS16-G3-18 diode?

    The maximum reverse voltage (VR) is 75 V, and the repetitive peak reverse voltage (VRRM) is 100 V.

  2. What is the continuous forward current rating of the BAS16-G3-18?

    The continuous forward current (IF) is 250 mA.

  3. What is the reverse recovery time of the BAS16-G3-18 diode?

    The reverse recovery time (trr) is 6 ns.

  4. What is the package type of the BAS16-G3-18 diode?

    The diode is packaged in a SOT-23 (SOD-323) surface mount package.

  5. Is the BAS16-G3-18 diode AEC-Q101 qualified?

    Yes, the BAS16-G3-18 is available in AEC-Q101 qualified versions, making it suitable for automotive applications.

  6. What is the thermal resistance junction to ambient air (RthJA) of the BAS16-G3-18?

    The thermal resistance junction to ambient air (RthJA) is 650 K/W.

  7. What is the junction temperature range of the BAS16-G3-18 diode?

    The junction temperature range is -55 to +150 °C.

  8. What is the storage temperature range for the BAS16-G3-18 diode?

    The storage temperature range is -65 to +150 °C.

  9. What is the forward voltage drop at 150 mA for the BAS16-G3-18 diode?

    The forward voltage drop (VF) at 150 mA is 1.25 V.

  10. Is the BAS16-G3-18 diode RoHS compliant?

    Yes, the BAS16-G3-18 diode is RoHS compliant.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
BAS16-G3-08
BAS16-G3-08
DIODE GEN PURP 75V 150MA SOT23

Similar Products

Part Number BAS16-G3-18 BAS16D-G3-18 BAS16-E3-18 BAS16-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 250mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOD-123 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOD-123 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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