BAS16-G3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS16-G3-18

Manufacturer No:
BAS16-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16-G3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is packaged in a SOT-23 (SOD-323) surface mount package, making it ideal for automatic insertion in various electronic circuits.

It is part of the BAS16 series, known for its ultra-fast switching speeds and high conductance, making it suitable for a wide range of applications requiring fast and reliable diode performance.

Key Specifications

Parameter Value Unit
Reverse Voltage (VR) 75 V
Repetitive Peak Reverse Voltage (VRRM) 100 V
Forward Current (Continuous) (IF) 250 mA
Non-Repetitive Peak Forward Surge Current (IFSM) at 1 μs 2 A
Power Dissipation (Ptot) 200 mW
Thermal Resistance Junction to Ambient Air (RthJA) 650 K/W
Junction Temperature (Tj) -55 to +150 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Forward Voltage (VF) at IF = 150 mA 1.25 V
Reverse Recovery Time (trr) 6 ns

Key Features

  • Ultra Fast Switching Speed: The BAS16-G3-18 diode has an ultra-fast switching speed, with a reverse recovery time of 6 ns, making it suitable for high-speed applications.
  • High Conductance: It offers high conductance, ensuring efficient current flow.
  • Surface Mount Package: Packaged in a SOT-23 (SOD-323) surface mount package, ideal for automatic insertion and space-saving designs.
  • AEC-Q101 Qualified: Available in AEC-Q101 qualified versions, making it suitable for automotive applications.
  • Moisture Sensitivity Level (MSL) 1: This diode has a low moisture sensitivity level, reducing the risk of damage during the soldering process.

Applications

  • High-Speed Switching Circuits: Ideal for applications requiring fast switching times, such as in digital circuits, switching power supplies, and high-frequency applications.
  • Automotive Electronics: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Consumer Electronics: Used in various consumer electronic devices where fast and reliable diode performance is necessary.
  • Industrial Control Systems: Applicable in industrial control systems that require high-speed and reliable diode operation.

Q & A

  1. What is the maximum reverse voltage of the BAS16-G3-18 diode?

    The maximum reverse voltage (VR) is 75 V, and the repetitive peak reverse voltage (VRRM) is 100 V.

  2. What is the continuous forward current rating of the BAS16-G3-18?

    The continuous forward current (IF) is 250 mA.

  3. What is the reverse recovery time of the BAS16-G3-18 diode?

    The reverse recovery time (trr) is 6 ns.

  4. What is the package type of the BAS16-G3-18 diode?

    The diode is packaged in a SOT-23 (SOD-323) surface mount package.

  5. Is the BAS16-G3-18 diode AEC-Q101 qualified?

    Yes, the BAS16-G3-18 is available in AEC-Q101 qualified versions, making it suitable for automotive applications.

  6. What is the thermal resistance junction to ambient air (RthJA) of the BAS16-G3-18?

    The thermal resistance junction to ambient air (RthJA) is 650 K/W.

  7. What is the junction temperature range of the BAS16-G3-18 diode?

    The junction temperature range is -55 to +150 °C.

  8. What is the storage temperature range for the BAS16-G3-18 diode?

    The storage temperature range is -65 to +150 °C.

  9. What is the forward voltage drop at 150 mA for the BAS16-G3-18 diode?

    The forward voltage drop (VF) at 150 mA is 1.25 V.

  10. Is the BAS16-G3-18 diode RoHS compliant?

    Yes, the BAS16-G3-18 diode is RoHS compliant.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.03
25,515

Please send RFQ , we will respond immediately.

Same Series
BAS16-G3-18
BAS16-G3-18
DIODE GEN PURP 75V 150MA SOT23

Similar Products

Part Number BAS16-G3-18 BAS16D-G3-18 BAS16-E3-18 BAS16-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 250mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOD-123 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOD-123 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC

Related Product By Brand

SM6T150AHM3/I
SM6T150AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T220CAHM3/I
SM6T220CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAV23C-G3-08
BAV23C-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
BAT54W-G3-18
BAT54W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
1N4004GPHE3/73
1N4004GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BZX84C27-E3-08
BZX84C27-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3
BZX84B12-E3-08
BZX84B12-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX384C3V3-G3-18
BZX384C3V3-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX84C8V2-G3-08
BZX84C8V2-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3