1N4004GPEHE3/93
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Vishay General Semiconductor - Diodes Division 1N4004GPEHE3/93

Manufacturer No:
1N4004GPEHE3/93
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPEHE3/93 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. It is part of the 1N400X series, which is widely used for rectification in various electronic circuits. This diode is designed to handle a maximum repetitive peak reverse voltage of 400 volts and a maximum average forward rectified current of 1 ampere. It is optimized for the conversion of alternating current (AC) to direct current (DC) and is suitable for use in power supplies, inverters, converters, and freewheeling diode applications.

Key Specifications

Parameter Symbol Unit Value
Maximum repetitive peak reverse voltage VRRM V 400
Maximum RMS voltage VRMS V 280
Maximum DC blocking voltage VDC V 400
Maximum average forward rectified current IF(AV) A 1.0
Peak forward surge current (8.3 ms single half sine-wave) IFSM A 30
Maximum instantaneous forward voltage VF V 1.1
Maximum DC reverse current at rated DC blocking voltage IR μA 5.0
Typical reverse recovery time trr μs 2.0
Typical junction capacitance CJ pF 8.0
Operating junction and storage temperature range TJ °C -55 to 150
Package DO-41 (DO-204AL)

Key Features

  • High Voltage Handling: The 1N4004GPEHE3/93 can handle a maximum repetitive peak reverse voltage of 400 volts, making it suitable for high-voltage applications.
  • High Current Capability: It can handle a maximum average forward rectified current of 1 ampere, which is adequate for many power supply and converter applications.
  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.1 volts, which minimizes energy loss during forward conduction.
  • Fast Recovery Time: The typical reverse recovery time is 2.0 microseconds, which is beneficial for high-frequency applications.
  • Compact Packaging: The diode is encapsulated in a DO-41 (DO-204AL) package, which is convenient for mounting and provides protection against damage.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage the flow of current.
  • Freewheeling Diodes: Used to protect circuits from back EMF generated by inductive loads.
  • General Rectification: Suitable for various general-purpose rectification needs in electronic circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPEHE3/93 diode?

    The maximum repetitive peak reverse voltage is 400 volts.

  2. What is the maximum average forward rectified current of the 1N4004GPEHE3/93 diode?

    The maximum average forward rectified current is 1 ampere.

  3. What is the typical forward voltage drop of the 1N4004GPEHE3/93 diode?

    The maximum instantaneous forward voltage is 1.1 volts.

  4. What is the typical reverse recovery time of the 1N4004GPEHE3/93 diode?

    The typical reverse recovery time is 2.0 microseconds.

  5. In what package is the 1N4004GPEHE3/93 diode available?

    The diode is available in a DO-41 (DO-204AL) package.

  6. What are the common applications of the 1N4004GPEHE3/93 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diode applications.

  7. What is the operating junction and storage temperature range of the 1N4004GPEHE3/93 diode?

    The operating junction and storage temperature range is -55 to 150 °C.

  8. What is the peak forward surge current rating of the 1N4004GPEHE3/93 diode?

    The peak forward surge current rating is 30 amps for an 8.3 ms single half sine-wave.

  9. How does the 1N4004GPEHE3/93 diode protect against back EMF in inductive loads?

    It acts as a freewheeling diode to protect circuits from back EMF generated by inductive loads.

  10. What is the maximum DC reverse current at rated DC blocking voltage for the 1N4004GPEHE3/93 diode?

    The maximum DC reverse current at rated DC blocking voltage is 5.0 μA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number 1N4004GPEHE3/93 1N4004GPE-E3/93 1N4004GPEHE3/73 1N4004GPEHE3/91
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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