1N4007GP-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GP-E3/54

Manufacturer No:
1N4007GP-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GP-E3/54 is a high-voltage rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose rectification and is commonly used in power supplies, rectifier circuits, and voltage multiplier configurations. It features a maximum repetitive peak reverse voltage of 1000V and a forward current of 1A, making it suitable for low to medium power rectification. The diode is housed in a DO-204AL (DO-41) package, which offers easy integration into circuit designs.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum DC Blocking Voltage (VDC) 1000 V
Average Forward Rectified Current (IF(AV)) 1 A
Peak Forward Surge Current (IFSM) 30 A (8.3 ms), 45 A (single half sine-wave) A
Maximum Full Load Reverse Current (IR(AV)) 30 μA A
Forward Voltage (VF) 1.1 V
Reverse Recovery Time (trr) 2 μs s
Minimum Operating Temperature -50 °C
Maximum Operating Temperature +175 °C
Package/Case DO-204AL (DO-41)
Termination Style Axial

Key Features

  • High-voltage rectification capability with a maximum repetitive peak reverse voltage of 1000V.
  • Forward current rating of 1A, suitable for low to medium power applications.
  • Low forward voltage drop and low leakage current.
  • High forward surge capability with a peak forward surge current of up to 45A.
  • Glass passivated junction for high reliability.
  • Matt tin-plated leads and UL94V-0 flame-rated moulded epoxy body.

Applications

  • Power Supplies: Used for rectification and voltage conversion in power supply circuits.
  • Rectifier Circuits: Suitable for various rectification applications in electronic circuits.
  • Voltage Multiplier Circuits: Utilized in voltage multiplier configurations for high-voltage generation.

The 1N4007GP-E3/54 is ideal for applications requiring efficient rectification of high-voltage AC signals.

Q & A

  1. Q: What is the maximum reverse voltage rating of the 1N4007GP-E3/54?

    A: The 1N4007GP-E3/54 has a maximum repetitive peak reverse voltage of 1000V.

  2. Q: Is the 1N4007GP-E3/54 suitable for use in voltage multiplier circuits?

    A: Yes, the 1N4007GP-E3/54 is commonly used in voltage multiplier configurations due to its high-voltage rectification capability and efficiency.

  3. Q: What is the forward current rating of the 1N4007GP-E3/54?

    A: The forward current rating of the 1N4007GP-E3/54 is 1A.

  4. Q: What is the package type of the 1N4007GP-E3/54?

    A: The 1N4007GP-E3/54 is housed in a DO-204AL (DO-41) package.

  5. Q: What is the maximum operating temperature of the 1N4007GP-E3/54?

    A: The maximum operating temperature of the 1N4007GP-E3/54 is +175°C.

  6. Q: What is the reverse recovery time of the 1N4007GP-E3/54?

    A: The reverse recovery time of the 1N4007GP-E3/54 is 2 μs.

  7. Q: Is the 1N4007GP-E3/54 RoHS compliant?

    A: Yes, the 1N4007GP-E3/54 is RoHS compliant.

  8. Q: What is the typical forward voltage of the 1N4007GP-E3/54?

    A: The typical forward voltage of the 1N4007GP-E3/54 is 1.1V at 1A.

  9. Q: How many pins does the 1N4007GP-E3/54 have?

    A: The 1N4007GP-E3/54 is a two-terminal diode and does not have traditional pins like integrated circuits.

  10. Q: What are the functions of the terminals of the 1N4007GP-E3/54?

    A: The anode (A) is the input terminal for positive voltage, and the cathode (K) is the output terminal for rectified voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

$0.52
1,920

Please send RFQ , we will respond immediately.

Same Series
1N4004GP-E3/54
1N4004GP-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4001GP-E3/54
1N4001GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GP-E3/54
1N4002GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4001GPE-E3/54
1N4001GPE-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4003GPE-E3/54
1N4003GPE-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4003GP-E3/73
1N4003GP-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4001GPE-E3/73
1N4001GPE-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4001GPHE3/73
1N4001GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4007GPHE3/54
1N4007GPHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPE-E3/91
1N4007GPE-E3/91
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007GP-E3/54 1N4007GPE-E3/54 1N4007GPHE3/54 1N4007GP-M3/54 1N4006GP-E3/54 1N4007GP-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Obsolete Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

SM6T33A-M3/5B
SM6T33A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T39AHE3_A/H
SM6T39AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T12A-E3/9AT
SM15T12A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T220AHE3/9AT
SM15T220AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AB
SM15T22CAHM3_A/I
SM15T22CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAS40-05-E3-08
BAS40-05-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MBR10100CT-E3/45
MBR10100CT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
MBR2545CT-7HE3/45
MBR2545CT-7HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
MURS120-E3/5BT
MURS120-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX84B24-E3-08
BZX84B24-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3