1N4007GP-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GP-E3/54

Manufacturer No:
1N4007GP-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GP-E3/54 is a high-voltage rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose rectification and is commonly used in power supplies, rectifier circuits, and voltage multiplier configurations. It features a maximum repetitive peak reverse voltage of 1000V and a forward current of 1A, making it suitable for low to medium power rectification. The diode is housed in a DO-204AL (DO-41) package, which offers easy integration into circuit designs.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum DC Blocking Voltage (VDC) 1000 V
Average Forward Rectified Current (IF(AV)) 1 A
Peak Forward Surge Current (IFSM) 30 A (8.3 ms), 45 A (single half sine-wave) A
Maximum Full Load Reverse Current (IR(AV)) 30 μA A
Forward Voltage (VF) 1.1 V
Reverse Recovery Time (trr) 2 μs s
Minimum Operating Temperature -50 °C
Maximum Operating Temperature +175 °C
Package/Case DO-204AL (DO-41)
Termination Style Axial

Key Features

  • High-voltage rectification capability with a maximum repetitive peak reverse voltage of 1000V.
  • Forward current rating of 1A, suitable for low to medium power applications.
  • Low forward voltage drop and low leakage current.
  • High forward surge capability with a peak forward surge current of up to 45A.
  • Glass passivated junction for high reliability.
  • Matt tin-plated leads and UL94V-0 flame-rated moulded epoxy body.

Applications

  • Power Supplies: Used for rectification and voltage conversion in power supply circuits.
  • Rectifier Circuits: Suitable for various rectification applications in electronic circuits.
  • Voltage Multiplier Circuits: Utilized in voltage multiplier configurations for high-voltage generation.

The 1N4007GP-E3/54 is ideal for applications requiring efficient rectification of high-voltage AC signals.

Q & A

  1. Q: What is the maximum reverse voltage rating of the 1N4007GP-E3/54?

    A: The 1N4007GP-E3/54 has a maximum repetitive peak reverse voltage of 1000V.

  2. Q: Is the 1N4007GP-E3/54 suitable for use in voltage multiplier circuits?

    A: Yes, the 1N4007GP-E3/54 is commonly used in voltage multiplier configurations due to its high-voltage rectification capability and efficiency.

  3. Q: What is the forward current rating of the 1N4007GP-E3/54?

    A: The forward current rating of the 1N4007GP-E3/54 is 1A.

  4. Q: What is the package type of the 1N4007GP-E3/54?

    A: The 1N4007GP-E3/54 is housed in a DO-204AL (DO-41) package.

  5. Q: What is the maximum operating temperature of the 1N4007GP-E3/54?

    A: The maximum operating temperature of the 1N4007GP-E3/54 is +175°C.

  6. Q: What is the reverse recovery time of the 1N4007GP-E3/54?

    A: The reverse recovery time of the 1N4007GP-E3/54 is 2 μs.

  7. Q: Is the 1N4007GP-E3/54 RoHS compliant?

    A: Yes, the 1N4007GP-E3/54 is RoHS compliant.

  8. Q: What is the typical forward voltage of the 1N4007GP-E3/54?

    A: The typical forward voltage of the 1N4007GP-E3/54 is 1.1V at 1A.

  9. Q: How many pins does the 1N4007GP-E3/54 have?

    A: The 1N4007GP-E3/54 is a two-terminal diode and does not have traditional pins like integrated circuits.

  10. Q: What are the functions of the terminals of the 1N4007GP-E3/54?

    A: The anode (A) is the input terminal for positive voltage, and the cathode (K) is the output terminal for rectified voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

$0.52
1,920

Please send RFQ , we will respond immediately.

Same Series
1N4007GP-E3/73
1N4007GP-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N5406GP-E3/54
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD
1N4005GPEHE3/73
1N4005GPEHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPEHE3/54
1N4001GPEHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GPEHE3/54
1N4003GPEHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4003GPHE3/54
1N4003GPHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4004GPEHE3/54
1N4004GPEHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/54
1N4007GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4002GPEHE3/91
1N4002GPEHE3/91
DIODE GEN PURP 100V 1A DO204AL
1N4005GPE-E3/53
1N4005GPE-E3/53
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4007GP-E3/54 1N4007GPE-E3/54 1N4007GPHE3/54 1N4007GP-M3/54 1N4006GP-E3/54 1N4007GP-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Obsolete Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC

Related Product By Brand

SM6T12A-E3/5B
SM6T12A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T150CAHE3/9AT
SM15T150CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
MBR1545CT-1
MBR1545CT-1
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO262
1N4148WS-HE3-18
1N4148WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
1N4007GPHM3/73
1N4007GPHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX84C30-E3-18
BZX84C30-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84C68-HE3-08
BZX84C68-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 68V 300MW SOT23-3
BZX84C27-G3-08
BZX84C27-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3