1N4007GP-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GP-E3/54

Manufacturer No:
1N4007GP-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GP-E3/54 is a high-voltage rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose rectification and is commonly used in power supplies, rectifier circuits, and voltage multiplier configurations. It features a maximum repetitive peak reverse voltage of 1000V and a forward current of 1A, making it suitable for low to medium power rectification. The diode is housed in a DO-204AL (DO-41) package, which offers easy integration into circuit designs.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum DC Blocking Voltage (VDC) 1000 V
Average Forward Rectified Current (IF(AV)) 1 A
Peak Forward Surge Current (IFSM) 30 A (8.3 ms), 45 A (single half sine-wave) A
Maximum Full Load Reverse Current (IR(AV)) 30 μA A
Forward Voltage (VF) 1.1 V
Reverse Recovery Time (trr) 2 μs s
Minimum Operating Temperature -50 °C
Maximum Operating Temperature +175 °C
Package/Case DO-204AL (DO-41)
Termination Style Axial

Key Features

  • High-voltage rectification capability with a maximum repetitive peak reverse voltage of 1000V.
  • Forward current rating of 1A, suitable for low to medium power applications.
  • Low forward voltage drop and low leakage current.
  • High forward surge capability with a peak forward surge current of up to 45A.
  • Glass passivated junction for high reliability.
  • Matt tin-plated leads and UL94V-0 flame-rated moulded epoxy body.

Applications

  • Power Supplies: Used for rectification and voltage conversion in power supply circuits.
  • Rectifier Circuits: Suitable for various rectification applications in electronic circuits.
  • Voltage Multiplier Circuits: Utilized in voltage multiplier configurations for high-voltage generation.

The 1N4007GP-E3/54 is ideal for applications requiring efficient rectification of high-voltage AC signals.

Q & A

  1. Q: What is the maximum reverse voltage rating of the 1N4007GP-E3/54?

    A: The 1N4007GP-E3/54 has a maximum repetitive peak reverse voltage of 1000V.

  2. Q: Is the 1N4007GP-E3/54 suitable for use in voltage multiplier circuits?

    A: Yes, the 1N4007GP-E3/54 is commonly used in voltage multiplier configurations due to its high-voltage rectification capability and efficiency.

  3. Q: What is the forward current rating of the 1N4007GP-E3/54?

    A: The forward current rating of the 1N4007GP-E3/54 is 1A.

  4. Q: What is the package type of the 1N4007GP-E3/54?

    A: The 1N4007GP-E3/54 is housed in a DO-204AL (DO-41) package.

  5. Q: What is the maximum operating temperature of the 1N4007GP-E3/54?

    A: The maximum operating temperature of the 1N4007GP-E3/54 is +175°C.

  6. Q: What is the reverse recovery time of the 1N4007GP-E3/54?

    A: The reverse recovery time of the 1N4007GP-E3/54 is 2 μs.

  7. Q: Is the 1N4007GP-E3/54 RoHS compliant?

    A: Yes, the 1N4007GP-E3/54 is RoHS compliant.

  8. Q: What is the typical forward voltage of the 1N4007GP-E3/54?

    A: The typical forward voltage of the 1N4007GP-E3/54 is 1.1V at 1A.

  9. Q: How many pins does the 1N4007GP-E3/54 have?

    A: The 1N4007GP-E3/54 is a two-terminal diode and does not have traditional pins like integrated circuits.

  10. Q: What are the functions of the terminals of the 1N4007GP-E3/54?

    A: The anode (A) is the input terminal for positive voltage, and the cathode (K) is the output terminal for rectified voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

$0.52
1,920

Please send RFQ , we will respond immediately.

Same Series
1N4002GP-E3/54
1N4002GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N5407GP-E3/54
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD
1N5406GP-E3/54
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD
1N4002GPE-E3/73
1N4002GPE-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4005GPHE3/73
1N4005GPHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4005GPHE3/54
1N4005GPHE3/54
DIODE GEN PURP 600V 1A DO204AL
1N4001GPEHE3/91
1N4001GPEHE3/91
DIODE GEN PURP 50V 1A DO204AL
1N4004GPE-E3/93
1N4004GPE-E3/93
DIODE GEN PURP 400V 1A DO204AL
1N4005GPE-E3/53
1N4005GPE-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GPE-E3/53
1N4007GPE-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/53
1N4007GPHE3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007GP-E3/54 1N4007GPE-E3/54 1N4007GPHE3/54 1N4007GP-M3/54 1N4006GP-E3/54 1N4007GP-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Obsolete Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

SM6T150A-E3/5B
SM6T150A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T68CA-M3/52
SM6T68CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T18CAHE3_A/I
SM6T18CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T15CAHE3/5B
SM6T15CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
BAT54A-HE3-18
BAT54A-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAS40-05-E3-08
BAS40-05-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MBR1545CT801HE3/45
MBR1545CT801HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
1N4148WS-HE3-18
1N4148WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
BAT54-E3-18
BAT54-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR160-E3/73
MUR160-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC