1N4007GPHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GPHE3/54

Manufacturer No:
1N4007GPHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GPHE3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various applications requiring reliable and efficient rectification. The 1N4007GPHE3/54 is designed for use in power supplies, inverters, converters, and freewheeling diode applications, making it a versatile component in electronic circuits.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum DC Blocking Voltage (VDC) 1000 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) - 8.3 ms sine-wave 30 A
Peak Forward Surge Current (IFSM) - square wave, tp = 1 ms 45 A
Forward Voltage (VF) @ IF = 1 A 1.1 V
Reverse Current (IR) @ VR = 1000 V 5.0 μA μA
Junction Capacitance (CJ) @ VR = 4 V, f = 1 MHz 15 pF
Operating Junction Temperature Range -50 to +150 °C
Package Type DO-204AL (DO-41)
Mounting Type Through Hole

Key Features

  • High Voltage Rating: The 1N4007GPHE3/54 has a maximum repetitive peak reverse voltage of 1000 V, making it suitable for high-voltage applications.
  • High Current Capability: It can handle a maximum average forward rectified current of 1.0 A and peak forward surge currents up to 45 A for short durations.
  • Low Forward Voltage Drop: The diode has a forward voltage drop of 1.1 V at 1 A, which minimizes power losses in rectification applications.
  • Low Reverse Current: The reverse current is limited to 5.0 μA at 1000 V, ensuring minimal leakage current.
  • Wide Operating Temperature Range: The diode operates over a temperature range of -50°C to +150°C, making it suitable for various environmental conditions.
  • RoHS Compliance: The 1N4007GPHE3/54 is RoHS compliant, ensuring it meets environmental regulations.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage power flow.
  • Freewheeling Diodes: Acts as a freewheeling diode to protect circuits from back EMF.
  • General Rectification: Suitable for general-purpose rectification in various electronic circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007GPHE3/54 diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007GPHE3/54?

    The maximum average forward rectified current is 1.0 A.

  3. What is the forward voltage drop of the 1N4007GPHE3/54 at 1 A?

    The forward voltage drop is 1.1 V at 1 A.

  4. What is the reverse current of the 1N4007GPHE3/54 at 1000 V?

    The reverse current is 5.0 μA at 1000 V.

  5. What is the operating junction temperature range of the 1N4007GPHE3/54?

    The operating junction temperature range is -50°C to +150°C.

  6. Is the 1N4007GPHE3/54 RoHS compliant?

    Yes, the 1N4007GPHE3/54 is RoHS compliant.

  7. What type of package does the 1N4007GPHE3/54 come in?

    The 1N4007GPHE3/54 comes in a DO-204AL (DO-41) package.

  8. What are some common applications of the 1N4007GPHE3/54?

    Common applications include power supplies, inverters, converters, and freewheeling diode applications.

  9. What is the junction capacitance of the 1N4007GPHE3/54?

    The junction capacitance is 15 pF at 4 V and 1 MHz.

  10. Can the 1N4007GPHE3/54 handle high surge currents?

    Yes, it can handle peak forward surge currents up to 45 A for short durations.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
78

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/73
1N4001GP-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4007GPE-E3/54
1N4007GPE-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4007GP-E3/73
1N4007GP-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPEHE3/73
1N4001GPEHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4006GPHE3/73
1N4006GPHE3/73
DIODE GEN PURP 800V 1A DO204AL
1N4001GPEHE3/54
1N4001GPEHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPHE3/54
1N4002GPHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4001GPHE3/54
1N4001GPHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL
1N4005GPE-E3/53
1N4005GPE-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GPE-E3/53
1N4007GPE-E3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007GPHE3/54 1N4007GPHM3/54 1N4006GPHE3/54 1N4007GP-E3/54 1N4007GPEHE3/54 1N4007GPHE3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs - 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T220A-E3/52
SM6T220A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T7V5A-E3/5B
SM6T7V5A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
SM15T12AHE3/57T
SM15T12AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T22AHE3/57T
SM15T22AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T200AHM3/H
SM15T200AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
1N4148W-G3-08
1N4148W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS86-M-08
BAS86-M-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BZX84C5V6-HE3-08
BZX84C5V6-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 300MW SOT23-3
BZX84B12-HE3-08
BZX84B12-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX384C2V7-G3-08
BZX384C2V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 200MW SOD323