SMMDL6050T1G
  • Share:

onsemi SMMDL6050T1G

Manufacturer No:
SMMDL6050T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 70V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMDL6050T1G is a high-performance switching diode manufactured by onsemi. This diode is designed to meet the stringent requirements of various applications, including automotive and industrial sectors. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. The device is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and suitable for a wide range of uses.

Key Specifications

Characteristic Symbol Value Unit
Continuous Reverse Voltage VR 70 Vdc
Peak Forward Current IF 200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Total Device Dissipation (FR-5 Board @ TA = 25°C) PD 200 mW
Derate above 25°C - 1.57 mW/°C
Thermal Resistance, Junction-to-Ambient RθJA 635 °C/W
Junction and Storage Temperature TJ, Tstg -55 to 150 °C
Reverse Breakdown Voltage (I(BR) = 100 µAdc) V(BR) 70 Vdc
Reverse Voltage Leakage Current (VR = 50 Vdc) IR - 0.1 µAdc
Forward Voltage (IF = 1.0 mA / 100 mA) VF 0.55 / 0.85 Vdc
Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) trr - 4.0 ns
Capacitance (VR = 0 V) C - 2.5 pF

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • S prefix for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • High continuous reverse voltage of 70 Vdc and peak forward current of 200 mA.
  • Low forward voltage drop (0.55 V @ 1 mA, 0.85 V @ 100 mA).
  • Fast reverse recovery time of 4 ns.
  • Low capacitance of 2.5 pF at 0 V reverse voltage.
  • Wide operating temperature range from -55°C to 150°C.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial control systems: Used in industrial control circuits where high reliability and fast switching times are required.
  • Power supplies: Employed in power supply circuits to protect against voltage spikes and surges.
  • Consumer electronics: Used in consumer electronic devices that require high-performance switching diodes.
  • Telecommunications: Applied in telecommunications equipment for signal processing and protection.

Q & A

  1. What is the continuous reverse voltage rating of the SMMDL6050T1G diode?

    The continuous reverse voltage rating is 70 Vdc.

  2. What is the peak forward current rating of the SMMDL6050T1G diode?

    The peak forward current rating is 200 mA.

  3. Is the SMMDL6050T1G diode RoHS compliant?
  4. What is the reverse recovery time of the SMMDL6050T1G diode?

    The reverse recovery time is up to 4 ns.

  5. What is the operating temperature range of the SMMDL6050T1G diode?

    The operating temperature range is from -55°C to 150°C.

  6. What package type is the SMMDL6050T1G diode available in?

    The diode is available in the SOD-323 package.

  7. Is the SMMDL6050T1G diode suitable for automotive applications?
  8. What is the forward voltage drop of the SMMDL6050T1G diode at 1 mA and 100 mA?

    The forward voltage drop is 0.55 V at 1 mA and 0.85 V at 100 mA.

  9. What is the thermal resistance, junction-to-ambient, of the SMMDL6050T1G diode?

    The thermal resistance, junction-to-ambient, is 635 °C/W.

  10. What is the capacitance of the SMMDL6050T1G diode at 0 V reverse voltage?

    The capacitance is up to 2.5 pF at 0 V reverse voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.23
672

Please send RFQ , we will respond immediately.

Same Series
SMMDL6050T1G
SMMDL6050T1G
DIODE GEN PURP 70V 200MA SOD323

Related Product By Categories

BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC