BAS16-E3-08
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Vishay General Semiconductor - Diodes Division BAS16-E3-08

Manufacturer No:
BAS16-E3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16-E3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS16 series, known for its high performance and reliability in various electronic applications. It is designed in the SOT-23 (SC-59, TO-236) package, making it ideal for surface mount technology. The BAS16-E3-08 is RoHS-compliant and suitable for commercial and industrial use.

Key Specifications

Parameter Value Unit
Reverse Voltage - Max (Vrrm) 75 V
Reverse Recovery Time - Max 6 ns
Power Dissipation 350 mW
Average Forward Current - Max 150 mA
Peak Current - Max 300 mA
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Operating Temperature Range -55 to +150 °C
Storage Temperature Range -65 to +150 °C

Key Features

  • Silicon epitaxial planar diode with ultra-fast switching speed (≤ 6 ns)
  • Surface mount package (SOT-23) ideal for automatic insertion
  • High conductance and low forward voltage drop
  • RoHS-compliant, commercial grade (Base P/N-E3)
  • AEC-Q101 qualified available (Base P/N-HE3_A)
  • High reliability and thermal efficiency

Applications

The BAS16-E3-08 is versatile and can be used in a variety of applications, including:

  • Consumer electronics for signal switching and rectification
  • Telecommunications equipment for high-speed signal processing
  • Automotive systems for circuit protection and signal switching
  • Computing and industrial applications requiring fast switching diodes
  • Lighting systems for voltage regulation and signal control

Q & A

  1. What is the maximum reverse voltage of the BAS16-E3-08?

    The maximum reverse voltage (Vrrm) of the BAS16-E3-08 is 75 V.

  2. What is the reverse recovery time of the BAS16-E3-08?

    The reverse recovery time of the BAS16-E3-08 is 6 ns.

  3. What is the maximum average forward current of the BAS16-E3-08?

    The maximum average forward current of the BAS16-E3-08 is 150 mA.

  4. What is the package style of the BAS16-E3-08?

    The BAS16-E3-08 is packaged in SOT-23 (SC-59, TO-236).

  5. Is the BAS16-E3-08 RoHS-compliant?
  6. What are the operating and storage temperature ranges for the BAS16-E3-08?

    The operating temperature range is -55 to +150 °C, and the storage temperature range is -65 to +150 °C.

  7. What is the peak forward surge current of the BAS16-E3-08?

    The peak forward surge current of the BAS16-E3-08 is 1 A for tp = 1 s and 2 A for tp = 1 μs.

  8. Is the BAS16-E3-08 suitable for automotive applications?
  9. What is the thermal resistance junction to ambient air for the BAS16-E3-08?

    The thermal resistance junction to ambient air (RthJA) is approximately 357 K/W on a ceramic substrate and 460 K/W on an FR-4 board with recommended soldering footprint.

  10. What are some typical applications of the BAS16-E3-08?

    The BAS16-E3-08 is used in consumer electronics, telecommunications, automotive systems, computing, and industrial applications for signal switching and rectification.

  11. How is the BAS16-E3-08 packaged for distribution?

    The BAS16-E3-08 is available in reels with 3000 pieces per reel.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number BAS16-E3-08 BAS16-HE3-08 BAS16D-E3-08 BAS16-E3-18 BAS16-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 150mA 250mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOD-123 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOD-123 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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