BAS16-HE3-08
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Vishay General Semiconductor - Diodes Division BAS16-HE3-08

Manufacturer No:
BAS16-HE3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOT23
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The BAS16-HE3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is available in a surface mount SOT-23-3 package. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The BAS16-HE3-08 is RoHS-compliant and features ultra-fast switching speeds, high conductance, and a robust design for reliable performance.

Key Specifications

Parameter Value Unit
Manufacturer Vishay General Semiconductor - Diodes Division
Part Number BAS16-HE3-08
Voltage - DC Reverse (Vr) (Max) 75 V V
Current - Average Rectified (Io) 250 mA mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA V @ mA
Reverse Recovery Time (trr) 6 ns ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V µA @ V
Capacitance @ Vr, F 4 pF @ 0V, 1MHz pF @ V, MHz
Mounting Type Surface Mount
Package / Case SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C °C
RoHS Status ROHS3 Compliant

Key Features

  • Ultra-fast switching speed (≤ 4 ns) for high-speed applications.
  • AEC-Q101 qualified, suitable for automotive and other demanding environments.
  • RoHS-compliant, ensuring environmental compliance.
  • High conductance and low forward voltage drop.
  • Surface mount SOT-23-3 package, ideal for automatic insertion.
  • High reverse voltage capability (75 V) and low reverse leakage current.
  • Low capacitance (4 pF @ 0V, 1MHz) for minimal signal distortion.

Applications

  • Automotive systems requiring high reliability and fast switching times.
  • General-purpose switching and rectification in electronic circuits.
  • High-frequency applications such as RF circuits and signal processing.
  • Power supply and voltage regulation circuits.
  • Consumer electronics and industrial control systems.

Q & A

  1. What is the maximum reverse voltage of the BAS16-HE3-08 diode?

    The maximum reverse voltage (Vr) is 75 V.

  2. What is the average forward current rating of the BAS16-HE3-08?

    The average forward current (Io) is 250 mA.

  3. What is the forward voltage drop at 150 mA for the BAS16-HE3-08?

    The forward voltage drop (Vf) at 150 mA is 1.25 V.

  4. What is the reverse recovery time of the BAS16-HE3-08 diode?

    The reverse recovery time (trr) is 6 ns.

  5. Is the BAS16-HE3-08 diode RoHS-compliant?

    Yes, the BAS16-HE3-08 is ROHS3 compliant.

  6. What is the operating temperature range for the BAS16-HE3-08?

    The operating temperature range is -55°C to 150°C.

  7. What package type is the BAS16-HE3-08 available in?

    The BAS16-HE3-08 is available in a surface mount SOT-23-3 package.

  8. Is the BAS16-HE3-08 AEC-Q101 qualified?

    Yes, the BAS16-HE3-08 is AEC-Q101 qualified.

  9. What is the capacitance of the BAS16-HE3-08 at 0V and 1MHz?

    The capacitance is 4 pF at 0V and 1MHz.

  10. What are some typical applications for the BAS16-HE3-08 diode?

    Typical applications include automotive systems, general-purpose switching, high-frequency circuits, power supply circuits, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
BAS16-HE3-08
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DIODE GEN PURP 75V 150MA SOT23
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BAS16-HE3-18
DIODE GEN PURP 75V 150MA SOT23

Similar Products

Part Number BAS16-HE3-08 BAS16D-HE3-08 BAS16-HE3-18 BAS16-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 250mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOD-123 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOD-123 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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