BAS16H,115
  • Share:

Nexperia USA Inc. BAS16H,115

Manufacturer No:
BAS16H,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GP 100V 215MA SOD123F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16H,115 is a general-purpose diode manufactured by Nexperia USA Inc. This component is designed to provide reliable and efficient performance in a variety of electronic circuits. The BAS16H,115 is packaged in the SOD123F format, making it suitable for applications where space is limited. It is widely used in general-purpose rectification, switching, and protection circuits.

Key Specifications

Parameter Value Unit
Voltage Rating (V_RRM) 100 V
Maximum Average Forward Current (I_F(AV)) 215 mA
Maximum Peak Forward Surge Current (I_FSM) 4.5 A
Reverse Leakage Current (I_R) 5 nA
Forward Voltage Drop (V_F) 1.25 V
Operating Temperature Range -55 to 150 °C
Package Type SOD123F

Key Features

  • High Voltage Rating: The BAS16H,115 has a voltage rating of 100V, making it suitable for a wide range of applications.
  • Low Forward Voltage Drop: With a forward voltage drop of 1.25V, this diode minimizes energy losses in the circuit.
  • Compact Package: The SOD123F package is small and space-efficient, ideal for modern electronic designs.
  • High Peak Forward Surge Current: It can handle a peak forward surge current of 4.5A, providing robust protection against transient currents.
  • Wide Operating Temperature Range: The diode operates reliably over a temperature range of -55°C to 150°C.

Applications

  • General-Purpose Rectification: Suitable for rectifier circuits in power supplies and other DC power systems.
  • Switching Circuits: Used in switching applications where high speed and low forward voltage drop are required.
  • Protection Circuits: Employed as a protective diode to safeguard against reverse voltage and transient currents.
  • Automotive and Industrial Electronics: Due to its robust specifications, it is often used in automotive and industrial electronic systems.

Q & A

  1. What is the voltage rating of the BAS16H,115 diode?

    The voltage rating of the BAS16H,115 diode is 100V.

  2. What is the maximum average forward current of the BAS16H,115?

    The maximum average forward current is 215mA.

  3. What is the package type of the BAS16H,115?

    The package type is SOD123F.

  4. What is the forward voltage drop of the BAS16H,115?

    The forward voltage drop is 1.25V.

  5. What is the operating temperature range of the BAS16H,115?

    The operating temperature range is -55°C to 150°C.

  6. What are some common applications of the BAS16H,115?

    Common applications include general-purpose rectification, switching circuits, protection circuits, and use in automotive and industrial electronics.

  7. How much peak forward surge current can the BAS16H,115 handle?

    The BAS16H,115 can handle a peak forward surge current of 4.5A.

  8. What is the reverse leakage current of the BAS16H,115?

    The reverse leakage current is 5nA.

  9. Is the BAS16H,115 suitable for high-frequency applications?

    Yes, it is suitable for high-frequency applications due to its low forward voltage drop and high switching speed.

  10. Where can I find the datasheet for the BAS16H,115?

    The datasheet can be found on the Nexperia website or through distributors like Mouser and Digi-Key.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.22
995

Please send RFQ , we will respond immediately.

Same Series
BAS16VV,115
BAS16VV,115
DIODE ARRAY GP 100V 200MA SOT666
BAS16VY,135
BAS16VY,135
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS16,215
BAS16,215
DIODE GP 100V 215MA TO236AB
BAS16L,315
BAS16L,315
DIODE GEN PURP 100V 215MA SOD882
BAS516,135
BAS516,135
DIODE GEN PURP 100V 250MA SOD523
BAS316,115
BAS316,115
DIODE GEN PURP 100V 250MA SOD323
BAS316,135
BAS316,135
DIODE GEN PURP 100V 250MA SOD323
BAS316Z
BAS316Z
DIODE GEN PURP 100V 250MA SC76-2
BAS16W,115
BAS16W,115
DIODE GEN PURP 100V 175MA SOT323
BAS16H,115
BAS16H,115
DIODE GP 100V 215MA SOD123F
BAS16J,135
BAS16J,135
DIODE GP 100V 250MA SOD323F
BAS16J,115
BAS16J,115
DIODE GP 100V 250MA SOD323F

Similar Products

Part Number BAS16H,115 BAS16W,115 BAS16J,115 BAS16T,115 BAS116H,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 75 V
Current - Average Rectified (Io) 215mA (DC) 175mA (DC) 250mA (DC) 155mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns 3 µs
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V 500 nA @ 80 V 500 nA @ 80 V 5 nA @ 75 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123F SC-70, SOT-323 SC-90, SOD-323F SC-75, SOT-416 SOD-123F
Supplier Device Package SOD-123F SOT-323 SOD-323F SC-75 SOD-123F
Operating Temperature - Junction 150°C (Max) -65°C ~ 150°C 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
BZX84-C12/DG/B3,23
BZX84-C12/DG/B3,23
Nexperia USA Inc.
DIODE ZENER 12.05V 250MW TO236AB
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
PMST3904/ZLF
PMST3904/ZLF
Nexperia USA Inc.
PMST3904/ZLF
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
HEF4067BT,652
HEF4067BT,652
Nexperia USA Inc.
IC MUX/DEMUX 4X16 24SOIC
74LVC126APW,112
74LVC126APW,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 14TSSOP
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO