BAS16J,115
  • Share:

Nexperia USA Inc. BAS16J,115

Manufacturer No:
BAS16J,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GP 100V 250MA SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16J,115 is a high-speed switching diode manufactured by Nexperia USA Inc. This diode is encapsulated in a small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package, making it ideal for high-frequency applications across various industries. It is known for its excellent switching performance, low forward voltage drop, and high surge current capability, which make it suitable for modern power conversion systems.

Key Specifications

Parameter Value
Type number BAS16J
Package SOD323F (SC-90)
Size (mm) 1.7 x 1.25 x 0.7
VR [max] (V) 100
VF [max] (mV) 1000 @ IF = 50 mA
IFSM [max] (A) 4
IR [max] (nA) 500 @ VR = 80 V
IFRM (mA) 500
trr [max] (ns) 4
IF [max] (mA) 250
Cd [max] (pF) 1.5
Automotive qualified No

Key Features

  • High-speed switching operation with a recovery time (trr) of ≤ 4 ns
  • Low forward voltage drop (1000 mV @ IF = 50 mA)
  • High surge current capability (4 A)
  • Compact SOD323F (SC-90) package with a size of 1.7 x 1.25 x 0.7 mm
  • Low capacitance and low leakage current
  • Reverse voltage and repetitive peak reverse voltage up to 100 V
  • RoHS compliant

Applications

  • Power supplies
  • Switching power converters
  • Motor control systems
  • Industrial automation devices
  • Automotive applications (though not automotive qualified)
  • Voltage regulation, signal amplification, and voltage clamping in electronic devices like smartphones, tablets, laptops, and LED displays
  • Battery charging circuits and sensor circuits due to its high-speed performance and low leakage current characteristics

Q & A

  1. What is the maximum reverse voltage of the BAS16J,115 diode?

    The maximum reverse voltage (VR) and repetitive peak reverse voltage (VRRM) of the BAS16J,115 diode are both 100 V.

  2. What is the recovery time (trr) of the BAS16J,115 diode?

    The recovery time (trr) of the BAS16J,115 diode is ≤ 4 ns.

  3. What is the maximum forward current (IF) of the BAS16J,115 diode?

    The maximum continuous forward current (IF) of the BAS16J,115 diode is 250 mA, and the maximum surge current (IFSM) is 4 A.

  4. What is the package type of the BAS16J,115 diode?

    The BAS16J,115 diode is packaged in a SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package.

  5. Is the BAS16J,115 diode RoHS compliant?
  6. What are some common applications of the BAS16J,115 diode?

    The BAS16J,115 diode is commonly used in power supplies, switching power converters, motor control systems, industrial automation devices, and various automotive and consumer electronic applications.

  7. What is the maximum forward voltage drop (VF) of the BAS16J,115 diode?

    The maximum forward voltage drop (VF) of the BAS16J,115 diode is 1000 mV at a forward current (IF) of 50 mA.

  8. Is the BAS16J,115 diode automotive qualified?

    No, the BAS16J,115 diode is not automotive qualified.

  9. What is the leakage current (IR) of the BAS16J,115 diode?

    The leakage current (IR) of the BAS16J,115 diode is 500 nA at a reverse voltage (VR) of 80 V.

  10. Where can I find more detailed technical information about the BAS16J,115 diode?

    You can find detailed technical information, including datasheets and SPICE models, on the Nexperia website or through authorized distributors like Digi-Key, Mouser, and Heisener).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.23
3,702

Please send RFQ , we will respond immediately.

Same Series
BAS16VY,165
BAS16VY,165
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS16,235
BAS16,235
DIODE GP 100V 215MA TO236AB
BAS16,215
BAS16,215
DIODE GP 100V 215MA TO236AB
BAS16L,315
BAS16L,315
DIODE GEN PURP 100V 215MA SOD882
BAS516,135
BAS516,135
DIODE GEN PURP 100V 250MA SOD523
BAS516,115
BAS516,115
DIODE GEN PURP 100V 250MA SOD523
BAS316,115
BAS316,115
DIODE GEN PURP 100V 250MA SOD323
BAS316,135
BAS316,135
DIODE GEN PURP 100V 250MA SOD323
BAS316Z
BAS316Z
DIODE GEN PURP 100V 250MA SC76-2
BAS16W,115
BAS16W,115
DIODE GEN PURP 100V 175MA SOT323
BAS16J,135
BAS16J,135
DIODE GP 100V 250MA SOD323F
BAS16WF
BAS16WF
DIODE GEN PURP 100V 175MA SOT323

Similar Products

Part Number BAS16J,115 BAS16W,115 BAS16J,135 BAS16T,115 BAS16H,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 250mA (DC) 175mA (DC) 250mA (DC) 155mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V 500 nA @ 80 V 500 nA @ 80 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-90, SOD-323F SC-70, SOT-323 SC-90, SOD-323F SC-75, SOT-416 SOD-123F
Supplier Device Package SOD-323F SOT-323 SOD-323F SC-75 SOD-123F
Operating Temperature - Junction 150°C (Max) -65°C ~ 150°C 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
PMEG2020EH/6X
PMEG2020EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HC137D,652
74HC137D,652
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO
74HC237D-Q100J
74HC237D-Q100J
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO