BAS16J,135
  • Share:

Nexperia USA Inc. BAS16J,135

Manufacturer No:
BAS16J,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GP 100V 250MA SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16J,135 is a high-speed switching diode manufactured by Nexperia USA Inc. This component is encapsulated in a small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package, specifically the SC-90 package type. It is designed for high-speed switching applications and is part of Nexperia’s extensive portfolio of diodes, which are used across various industries including automotive, industrial, power, computing, consumer, mobile, and wearables.

Key Specifications

Parameter Conditions Min Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - 100 V
VR (Reverse Voltage) - - 100 V
IF (Forward Current) tp = 1 µs; square wave; Tj(init) = 25 °C - 250 mA mA
IFSM (Non-Repetitive Peak Forward Current) tp = 1 s; square wave; Tj(init) = 25 °C - 4 A A
IFRM (Repetitive Peak Forward Current) tp ≤ 0.5 ms; δ ≤ 0.25 - 500 mA mA
VF (Forward Voltage) IF = 50 mA - 1000 mV mV
IR (Reverse Current) VR = 80 V - 500 nA nA
trr (Reverse Recovery Time) - - 4 ns ns
Cd (Diode Capacitance) f = 1 MHz; Tamb = 25 °C - 1.5 pF pF
Tj (Junction Temperature) - - 150 °C °C
Tamb (Ambient Temperature) - -65 150 °C
Tstg (Storage Temperature) - -65 150 °C

Key Features

  • High-speed switching diode with a reverse recovery time of 4 ns.
  • Encapsulated in a small and flat lead SOD323F (SC-90) surface-mounted package.
  • Repetitive peak reverse voltage (VRRM) of 100 V.
  • Forward current (IF) of up to 250 mA.
  • Low forward voltage (VF) of 1000 mV at IF = 50 mA.
  • Low reverse current (IR) of 500 nA at VR = 80 V.
  • Compliant with EU RoHS, CN RoHS, and REACH regulations.

Applications

The BAS16J,135 is suitable for a wide range of applications across various industries, including:

  • Automotive systems: For high-speed switching and rectification in automotive electronics.
  • Industrial systems: Used in power supplies, motor control, and other industrial applications requiring fast switching times.
  • Consumer electronics: Found in mobile devices, wearables, and other consumer electronics where compact size and high performance are crucial.
  • Power and computing: Used in power management circuits, computing devices, and other high-speed switching applications.

Q & A

  1. What is the package type of the BAS16J,135?

    The BAS16J,135 is packaged in a SOD323F (SC-90) surface-mounted device.

  2. What is the maximum repetitive peak reverse voltage (VRRM) of the BAS16J,135?

    The maximum repetitive peak reverse voltage is 100 V.

  3. What is the forward current (IF) rating of the BAS16J,135?

    The forward current rating is up to 250 mA.

  4. What is the reverse recovery time (trr) of the BAS16J,135?

    The reverse recovery time is 4 ns.

  5. Is the BAS16J,135 compliant with RoHS and REACH regulations?

    Yes, it is compliant with EU RoHS, CN RoHS, and REACH regulations.

  6. What are the typical applications of the BAS16J,135?

    It is used in automotive, industrial, consumer electronics, power, and computing applications.

  7. What is the maximum junction temperature (Tj) of the BAS16J,135?

    The maximum junction temperature is 150 °C.

  8. What is the storage temperature range (Tstg) for the BAS16J,135?

    The storage temperature range is -65 °C to 150 °C.

  9. How does the BAS16J,135 handle thermal stress?

    The device has specified thermal resistances and is designed to be mounted on an FR4 PCB with appropriate thermal management.

  10. Where can I find detailed technical information for the BAS16J,135?

    Detailed technical information can be found in the datasheet available on Nexperia’s website or through local sales offices.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.23
3,803

Please send RFQ , we will respond immediately.

Same Series
BAS16VY,165
BAS16VY,165
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS16VY,135
BAS16VY,135
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS16L,315
BAS16L,315
DIODE GEN PURP 100V 215MA SOD882
BAS516,315
BAS516,315
DIODE GEN PURP 100V 250MA SOD523
BAS516,135
BAS516,135
DIODE GEN PURP 100V 250MA SOD523
BAS516,115
BAS516,115
DIODE GEN PURP 100V 250MA SOD523
BAS316,115
BAS316,115
DIODE GEN PURP 100V 250MA SOD323
BAS316,135
BAS316,135
DIODE GEN PURP 100V 250MA SOD323
BAS316Z
BAS316Z
DIODE GEN PURP 100V 250MA SC76-2
BAS16W,115
BAS16W,115
DIODE GEN PURP 100V 175MA SOT323
BAS16J,135
BAS16J,135
DIODE GP 100V 250MA SOD323F
BAS16WF
BAS16WF
DIODE GEN PURP 100V 175MA SOT323

Similar Products

Part Number BAS16J,135 BAS16W,135 BAS16J,115
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 250mA (DC) 175mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-90, SOD-323F SC-70, SOT-323 SC-90, SOD-323F
Supplier Device Package SOD-323F SOT-323 SOD-323F
Operating Temperature - Junction 150°C (Max) -65°C ~ 150°C 150°C (Max)

Related Product By Categories

BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
PMEG10020ELR-QX
PMEG10020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
CBTD16210DGG,112
CBTD16210DGG,112
Nexperia USA Inc.
IC BUS SWITCH 10 X 1:1 48TSSOP