BAS16J,135
  • Share:

Nexperia USA Inc. BAS16J,135

Manufacturer No:
BAS16J,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GP 100V 250MA SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16J,135 is a high-speed switching diode manufactured by Nexperia USA Inc. This component is encapsulated in a small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package, specifically the SC-90 package type. It is designed for high-speed switching applications and is part of Nexperia’s extensive portfolio of diodes, which are used across various industries including automotive, industrial, power, computing, consumer, mobile, and wearables.

Key Specifications

Parameter Conditions Min Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - 100 V
VR (Reverse Voltage) - - 100 V
IF (Forward Current) tp = 1 µs; square wave; Tj(init) = 25 °C - 250 mA mA
IFSM (Non-Repetitive Peak Forward Current) tp = 1 s; square wave; Tj(init) = 25 °C - 4 A A
IFRM (Repetitive Peak Forward Current) tp ≤ 0.5 ms; δ ≤ 0.25 - 500 mA mA
VF (Forward Voltage) IF = 50 mA - 1000 mV mV
IR (Reverse Current) VR = 80 V - 500 nA nA
trr (Reverse Recovery Time) - - 4 ns ns
Cd (Diode Capacitance) f = 1 MHz; Tamb = 25 °C - 1.5 pF pF
Tj (Junction Temperature) - - 150 °C °C
Tamb (Ambient Temperature) - -65 150 °C
Tstg (Storage Temperature) - -65 150 °C

Key Features

  • High-speed switching diode with a reverse recovery time of 4 ns.
  • Encapsulated in a small and flat lead SOD323F (SC-90) surface-mounted package.
  • Repetitive peak reverse voltage (VRRM) of 100 V.
  • Forward current (IF) of up to 250 mA.
  • Low forward voltage (VF) of 1000 mV at IF = 50 mA.
  • Low reverse current (IR) of 500 nA at VR = 80 V.
  • Compliant with EU RoHS, CN RoHS, and REACH regulations.

Applications

The BAS16J,135 is suitable for a wide range of applications across various industries, including:

  • Automotive systems: For high-speed switching and rectification in automotive electronics.
  • Industrial systems: Used in power supplies, motor control, and other industrial applications requiring fast switching times.
  • Consumer electronics: Found in mobile devices, wearables, and other consumer electronics where compact size and high performance are crucial.
  • Power and computing: Used in power management circuits, computing devices, and other high-speed switching applications.

Q & A

  1. What is the package type of the BAS16J,135?

    The BAS16J,135 is packaged in a SOD323F (SC-90) surface-mounted device.

  2. What is the maximum repetitive peak reverse voltage (VRRM) of the BAS16J,135?

    The maximum repetitive peak reverse voltage is 100 V.

  3. What is the forward current (IF) rating of the BAS16J,135?

    The forward current rating is up to 250 mA.

  4. What is the reverse recovery time (trr) of the BAS16J,135?

    The reverse recovery time is 4 ns.

  5. Is the BAS16J,135 compliant with RoHS and REACH regulations?

    Yes, it is compliant with EU RoHS, CN RoHS, and REACH regulations.

  6. What are the typical applications of the BAS16J,135?

    It is used in automotive, industrial, consumer electronics, power, and computing applications.

  7. What is the maximum junction temperature (Tj) of the BAS16J,135?

    The maximum junction temperature is 150 °C.

  8. What is the storage temperature range (Tstg) for the BAS16J,135?

    The storage temperature range is -65 °C to 150 °C.

  9. How does the BAS16J,135 handle thermal stress?

    The device has specified thermal resistances and is designed to be mounted on an FR4 PCB with appropriate thermal management.

  10. Where can I find detailed technical information for the BAS16J,135?

    Detailed technical information can be found in the datasheet available on Nexperia’s website or through local sales offices.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.23
3,803

Please send RFQ , we will respond immediately.

Same Series
BAS16VY,165
BAS16VY,165
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS16VY,135
BAS16VY,135
DIODE ARRAY GP 100V 200MA 6TSSOP
BAS16,215
BAS16,215
DIODE GP 100V 215MA TO236AB
BAS516,315
BAS516,315
DIODE GEN PURP 100V 250MA SOD523
BAS516,135
BAS516,135
DIODE GEN PURP 100V 250MA SOD523
BAS516,115
BAS516,115
DIODE GEN PURP 100V 250MA SOD523
BAS316,115
BAS316,115
DIODE GEN PURP 100V 250MA SOD323
BAS316,135
BAS316,135
DIODE GEN PURP 100V 250MA SOD323
BAS316Z
BAS316Z
DIODE GEN PURP 100V 250MA SC76-2
BAS16W,115
BAS16W,115
DIODE GEN PURP 100V 175MA SOT323
BAS16H,115
BAS16H,115
DIODE GP 100V 215MA SOD123F
BAS16J,115
BAS16J,115
DIODE GP 100V 250MA SOD323F

Similar Products

Part Number BAS16J,135 BAS16W,135 BAS16J,115
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 250mA (DC) 175mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-90, SOD-323F SC-70, SOT-323 SC-90, SOD-323F
Supplier Device Package SOD-323F SOT-323 SOD-323F
Operating Temperature - Junction 150°C (Max) -65°C ~ 150°C 150°C (Max)

Related Product By Categories

PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
BZX84-B10/DG/B3215
BZX84-B10/DG/B3215
Nexperia USA Inc.
DIODE ZENER
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BC807-40HZ
BC807-40HZ
Nexperia USA Inc.
BC807-40H/SOT23/TO-236AB
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC
BAS116H
BAS116H
Nexperia USA Inc.
NOW NEXPERIA BAS116H - RECTIFIER