MUR115G
  • Share:

onsemi MUR115G

Manufacturer No:
MUR115G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 150V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR115G is a high-performance, ultrafast recovery rectifier manufactured by ON Semiconductor. This device is part of the MUR120 series, designed for use in switching power supplies, inverters, and as free-wheeling diodes. The MUR115G is known for its fast recovery times, low forward voltage, and high operating junction temperature, making it suitable for a variety of demanding applications.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 150 V
Average Rectified Forward Current IF(AV) 1.0 @ TA = 130°C A
Nonrepetitive Peak Surge Current IFSM 35 A
Operating Junction Temperature and Storage Temperature Range TJ, Tstg -65 to +175 °C
Maximum Instantaneous Forward Voltage vF 0.710 @ TJ = 25°C, 0.875 @ TJ = 150°C V
Maximum Instantaneous Reverse Current iR 50 @ TJ = 25°C, 2.0 @ TJ = 150°C μA
Maximum Reverse Recovery Time trr 25 ns ns

Key Features

  • Ultrafast recovery times of 25 ns, making it ideal for high-frequency applications.
  • Operating junction temperature up to 175°C, ensuring reliability in high-temperature environments.
  • Low forward voltage drop, reducing power losses and improving efficiency.
  • Low leakage current, minimizing standby power consumption.
  • High temperature glass passivated junction for enhanced durability.
  • Pb-free and RoHS compliant, suitable for environmentally friendly designs.
  • Available in axial lead packages with corrosion-resistant finishes and readily solderable terminal leads.

Applications

  • Switching power supplies: The MUR115G is well-suited for use in switching power supplies due to its fast recovery times and low forward voltage drop.
  • Inverters: Its high operating junction temperature and low leakage current make it a reliable choice for inverter applications.
  • Free-wheeling diodes: The device's ultrafast recovery times and high voltage capability make it an excellent option as a free-wheeling diode in various circuits.
  • Automotive and industrial systems: The MUR115G's robust design and compliance with automotive standards (where applicable) make it suitable for use in automotive and industrial systems.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR115G?

    The peak repetitive reverse voltage (VRRM) of the MUR115G is 150 V.

  2. What is the average rectified forward current rating of the MUR115G?

    The average rectified forward current (IF(AV)) of the MUR115G is 1.0 A at a case temperature of 130°C.

  3. What is the maximum operating junction temperature of the MUR115G?

    The maximum operating junction temperature (TJ) of the MUR115G is 175°C.

  4. What is the reverse recovery time of the MUR115G?

    The reverse recovery time (trr) of the MUR115G is 25 ns.

  5. Is the MUR115G Pb-free and RoHS compliant?
  6. What are the typical applications of the MUR115G?

    The MUR115G is typically used in switching power supplies, inverters, and as free-wheeling diodes.

  7. What is the maximum instantaneous forward voltage of the MUR115G?

    The maximum instantaneous forward voltage (vF) of the MUR115G is 0.710 V at 25°C and 0.875 V at 150°C.

  8. What is the nonrepetitive peak surge current rating of the MUR115G?

    The nonrepetitive peak surge current (IFSM) of the MUR115G is 35 A.

  9. Is the MUR115G suitable for high-temperature environments?
  10. What type of package is the MUR115G available in?

    The MUR115G is available in axial lead packages.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 150 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.36
551

Please send RFQ , we will respond immediately.

Same Series
MUR120G
MUR120G
DIODE GEN PURP 200V 1A AXIAL
MUR115G
MUR115G
DIODE GEN PURP 150V 1A AXIAL
MUR140G
MUR140G
DIODE GEN PURP 400V 1A AXIAL
MUR130G
MUR130G
DIODE GEN PURP 300V 1A AXIAL
MUR140RLG
MUR140RLG
DIODE GEN PURP 400V 1A AXIAL
MUR160RLG
MUR160RLG
DIODE GEN PURP 600V 1A AXIAL
MUR120RLG
MUR120RLG
DIODE GEN PURP 200V 1A AXIAL
MUR115RLG
MUR115RLG
DIODE GEN PURP 150V 1A AXIAL
MUR140RL
MUR140RL
DIODE GEN PURP 400V 1A AXIAL
MUR110RL
MUR110RL
DIODE GEN PURP 100V 1A AXIAL
MUR115RL
MUR115RL
DIODE GEN PURP 150V 1A AXIAL
MUR105G
MUR105G
DIODE GEN PURP 50V 1A AXIAL

Similar Products

Part Number MUR115G MUR115S MUR1515G MUR105G MUR110G MUR115
Manufacturer onsemi Taiwan Semiconductor Corporation onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 150 V 50 V 100 V 150 V
Current - Average Rectified (Io) 1A 1A 15A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 875 mV @ 1 A 1.05 V @ 15 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 25 ns 35 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 150 V 50 µA @ 150 V 10 µA @ 150 V 2 µA @ 50 V 2 µA @ 100 V 2 µA @ 150 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-214AA, SMB TO-220-2 DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial DO-214AA (SMB) TO-220-2 Axial Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -55°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP