MUR120G
  • Share:

onsemi MUR120G

Manufacturer No:
MUR120G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 200V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR120G is a high-performance ultrafast rectifier diode produced by ON Semiconductor. This device is part of the MUR120 series, designed for use in switching power supplies, inverters, and as free-wheeling diodes. The MUR120G is characterized by its ultrafast recovery times, high operating junction temperature, and low forward voltage, making it an ideal choice for high-efficiency power conversion applications.

Key Specifications

Parameter Value Unit
Peak Reverse Repetitive Voltage (VRRM) 200 V
Average Rectified Forward Current (IF(AV)) 1.0 A
Maximum Instantaneous Forward Voltage (VF) 0.875 V
Maximum Reverse Recovery Time (trr) 35 ns
Operating Junction Temperature (TJ) -65 to +175 °C
Lead Temperature for Soldering 260 °C (Max. for 10 seconds)
Package Type DO-41 (Axial Lead)
Weight Approximately 0.4 grams

Key Features

  • Ultrafast recovery times of 25, 50, and 75 nanoseconds
  • High operating junction temperature of up to 175°C
  • Low forward voltage (VF) of 0.875 V
  • Low leakage current
  • High temperature glass passivated junction
  • Corrosion-resistant external surfaces and readily solderable terminal leads
  • Pb-free device

Applications

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes
  • High-efficiency power conversion applications

Q & A

  1. What is the peak reverse repetitive voltage (VRRM) of the MUR120G?

    The peak reverse repetitive voltage (VRRM) of the MUR120G is 200 V.

  2. What is the average rectified forward current (IF(AV)) of the MUR120G?

    The average rectified forward current (IF(AV)) of the MUR120G is 1.0 A.

  3. What is the maximum instantaneous forward voltage (VF) of the MUR120G?

    The maximum instantaneous forward voltage (VF) of the MUR120G is 0.875 V.

  4. What are the ultrafast recovery times of the MUR120G?

    The ultrafast recovery times of the MUR120G are 25, 50, and 75 nanoseconds.

  5. What is the operating junction temperature range of the MUR120G?

    The operating junction temperature range of the MUR120G is -65 to +175°C.

  6. What is the package type of the MUR120G?

    The package type of the MUR120G is DO-41 (Axial Lead).

  7. Is the MUR120G a Pb-free device?
  8. What are the typical applications of the MUR120G?

    The MUR120G is typically used in switching power supplies, inverters, and as free-wheeling diodes.

  9. What is the lead temperature for soldering the MUR120G?

    The lead temperature for soldering the MUR120G is 260°C (Max. for 10 seconds).

  10. What are the mechanical characteristics of the MUR120G?

    The MUR120G has a molded epoxy case, weighs approximately 0.4 grams, and has corrosion-resistant external surfaces with readily solderable terminal leads.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.54
1,453

Please send RFQ , we will respond immediately.

Same Series
MUR160G
MUR160G
DIODE GEN PURP 600V 1A AXIAL
MUR110G
MUR110G
DIODE GEN PURP 100V 1A AXIAL
MUR115G
MUR115G
DIODE GEN PURP 150V 1A AXIAL
MUR130G
MUR130G
DIODE GEN PURP 300V 1A AXIAL
MUR140RLG
MUR140RLG
DIODE GEN PURP 400V 1A AXIAL
MUR130RLG
MUR130RLG
DIODE GEN PURP 300V 1A AXIAL
MUR160RLG
MUR160RLG
DIODE GEN PURP 600V 1A AXIAL
MUR130
MUR130
SF Rect, 300V, 1.00A, 50ns
MUR160RL
MUR160RL
DIODE GEN PURP 600V 1A AXIAL
MUR115RL
MUR115RL
DIODE GEN PURP 150V 1A AXIAL
MUR105G
MUR105G
DIODE GEN PURP 50V 1A AXIAL
MUR105RLG
MUR105RLG
DIODE GEN PURP 50V 1A AXIAL

Similar Products

Part Number MUR120G MUR160G MUR140G MUR130G MUR1520G MUR120S MUR110G MUR120
Manufacturer onsemi onsemi onsemi onsemi onsemi Taiwan Semiconductor Corporation onsemi Diotec Semiconductor
Product Status Active Active Obsolete Obsolete Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 300 V 200 V 200 V 100 V 200 V
Current - Average Rectified (Io) 1A 1A 1A 1A 15A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.05 V @ 15 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 75 ns 35 ns 25 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 300 V 10 µA @ 200 V 50 µA @ 200 V 2 µA @ 100 V 5 µA @ 200 V
Capacitance @ Vr, F - - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial TO-220-2 DO-214AA, SMB DO-204AL, DO-41, Axial DO-204AC, DO-41, Axial
Supplier Device Package Axial Axial Axial Axial TO-220-2 DO-214AA (SMB) Axial DO-41/DO-204AC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 175°C -65°C ~ 175°C -50°C ~ 175°C

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL