NRVBS260NT3G
  • Share:

onsemi NRVBS260NT3G

Manufacturer No:
NRVBS260NT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 2A 60V 1202 SMB2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVBS260NT3G is a surface mount Schottky power rectifier produced by onsemi. This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier, featuring epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. The NRVBS260NT3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 60 V
Working Peak Reverse Voltage VRWM 60 V
DC Blocking Voltage VR 60 V
Average Rectified Forward Current (At Rated VR, TL = 95°C) IO 2.0 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 60 A
Storage Temperature Range Tstg −55 to +150 °C
Operating Junction Temperature TJ −55 to +125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/μs
Maximum Instantaneous Forward Voltage (iF = 2.0 A, TJ = 25°C) vF 0.63 V
Thermal Resistance, Junction-to-Lead RθJL 24 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W

Key Features

  • Compact Package with J-Bend Leads Ideal for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Guard-Ring for Over-Voltage Protection
  • Low Forward Voltage Drop
  • AEC-Q101 Qualified and PPAP Capable for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • Pb-Free Devices
  • Corrosion Resistant and Readily Solderable Terminal Leads
  • ESD Ratings: Machine Model = C, Human Body Model = 3B

Applications

The NRVBS260NT3G is suitable for various applications including:

  • Low voltage, high frequency switching power supplies
  • Free wheeling diodes
  • Polarity protection diodes
  • Automotive and industrial power systems
  • High-efficiency power conversion systems

Q & A

  1. What is the peak repetitive reverse voltage of the NRVBS260NT3G?

    The peak repetitive reverse voltage is 60 V.

  2. What is the average rectified forward current rating of the NRVBS260NT3G?

    The average rectified forward current rating is 2.0 A at TL = 95°C.

  3. What is the maximum instantaneous forward voltage at 2.0 A and 25°C?

    The maximum instantaneous forward voltage is 0.63 V.

  4. Is the NRVBS260NT3G AEC-Q101 qualified?

    Yes, the NRVBS260NT3G is AEC-Q101 qualified and PPAP capable.

  5. What are the thermal resistance values for the NRVBS260NT3G?

    The thermal resistance from junction to lead (RθJL) is 24 °C/W, and from junction to ambient (RθJA) is 80 °C/W.

  6. What is the storage temperature range for the NRVBS260NT3G?

    The storage temperature range is −55 to +150 °C.

  7. Is the NRVBS260NT3G Pb-free?

    Yes, the NRVBS260NT3G is a Pb-free device.

  8. What are the ESD ratings for the NRVBS260NT3G?

    The ESD ratings are Machine Model = C and Human Body Model = 3B.

  9. What type of package does the NRVBS260NT3G use?

    The NRVBS260NT3G uses an SMB (Surface Mount) package.

  10. What are some common applications for the NRVBS260NT3G?

    Common applications include low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:630 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 60 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.15
1,584

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NRVBS260NT3G NRVBS260T3G
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V
Current - Average Rectified (Io) 2A 2A
Voltage - Forward (Vf) (Max) @ If 630 mV @ 2 A 630 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 200 µA @ 60 V 200 µA @ 60 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMB
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC