Overview
The NVD5117PLT4G-VF01 is a power MOSFET produced by onsemi, designed for high-performance applications. This P-channel MOSFET features a drain-to-source voltage (V_DSS) of -60 V and a continuous drain current (I_D) of up to -61 A at 25°C. It is AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments. The device is lead-free, halogen-free, and RoHS compliant, making it suitable for a wide range of applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | V_DSS | -60 | V |
| Gate-to-Source Voltage | V_GS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | I_D | -61 | A |
| Continuous Drain Current (TC = 100°C) | I_D | -43 | A |
| Power Dissipation (TC = 25°C) | P_D | 118 | W |
| Power Dissipation (TC = 100°C) | P_D | 59 | W |
| Pulsed Drain Current (tp = 10 μs) | I_DM | -419 | A |
| Operating Junction and Storage Temperature | T_J, T_stg | -55 to 175 | °C |
| Drain-to-Source On Resistance (V_GS = -10 V, I_D = -29 A) | R_DS(on) | 12-16 | mΩ |
| Gate Threshold Voltage | V_GS(TH) | -1.5 to -2.5 | V |
| Lead Temperature for Soldering | T_L | 260 | °C |
Key Features
- Low R_DS(on) to minimize conduction losses
- High current capability
- Avalanche energy specified
- AEC-Q101 qualified for automotive reliability
- Pb-free, halogen-free, and RoHS compliant
- High thermal performance with low junction-to-case thermal resistance (R_JC = 1.3 °C/W)
- Fast switching times (turn-on delay time td(on) = 22 ns, turn-off delay time td(off) = 50 ns)
Applications
The NVD5117PLT4G-VF01 is suitable for various high-power applications, including:
- Automotive systems (e.g., power steering, fuel pumps, and electric power steering)
- Industrial power supplies and motor control
- Power management in consumer electronics
- Switch-mode power supplies
- DC-DC converters
Q & A
- What is the maximum drain-to-source voltage of the NVD5117PLT4G-VF01?
The maximum drain-to-source voltage (V_DSS) is -60 V. - What is the continuous drain current at 25°C?
The continuous drain current (I_D) at 25°C is up to -61 A. - Is the NVD5117PLT4G-VF01 AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments. - What is the typical on-resistance of the MOSFET?
The typical on-resistance (R_DS(on)) is 12-16 mΩ at V_GS = -10 V and I_D = -29 A. - What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to 175 °C. - Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant. - What are the typical switching times for this MOSFET?
The typical turn-on delay time (td(on)) is 22 ns, and the typical turn-off delay time (td(off)) is 50 ns. - What is the maximum pulsed drain current?
The maximum pulsed drain current (I_DM) is -419 A for a pulse width of 10 μs. - What is the lead temperature for soldering?
The lead temperature for soldering is 260 °C. - What are some common applications for this MOSFET?
Common applications include automotive systems, industrial power supplies, power management in consumer electronics, switch-mode power supplies, and DC-DC converters.
