NVR5198NLT1G
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onsemi NVR5198NLT1G

Manufacturer No:
NVR5198NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 1.7A SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The NVR5198NLT1G is a N-channel logic power MOSFET produced by onsemi. This component is designed for high-performance applications requiring low on-resistance and fast switching times. The MOSFET is packaged in a SOT-23 footprint, making it suitable for space-constrained designs. It is lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)2.2 A
RDS(ON) (On-Resistance)Typically 80 mΩ at VGS = 10 V
PackagingSOT-23
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) for efficient power handling
  • Fast switching times for high-frequency applications
  • Lead-free and RoHS compliant for environmental sustainability
  • Compact SOT-23 packaging for space-saving designs
  • High drain-source voltage (VDS) of 60 V for robust performance

Applications

The NVR5198NLT1G is suitable for a variety of applications, including but not limited to:

  • Power management in consumer electronics
  • Automotive systems requiring high reliability and efficiency
  • Industrial control systems and motor drives
  • Switch-mode power supplies and DC-DC converters
  • General-purpose switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NVR5198NLT1G? The maximum drain-source voltage is 60 V.
  2. What is the typical on-resistance (RDS(ON)) of the NVR5198NLT1G? The typical on-resistance is 80 mΩ at VGS = 10 V.
  3. What is the continuous drain current (ID) rating of the NVR5198NLT1G? The continuous drain current rating is 2.2 A.
  4. What is the packaging type of the NVR5198NLT1G? The component is packaged in a SOT-23 footprint.
  5. Is the NVR5198NLT1G lead-free and RoHS compliant? Yes, it is lead-free and RoHS compliant.
  6. What is the operating temperature range of the NVR5198NLT1G? The operating temperature range is -55°C to 150°C.
  7. What are some typical applications for the NVR5198NLT1G? Typical applications include power management in consumer electronics, automotive systems, industrial control systems, switch-mode power supplies, and general-purpose switching.
  8. Where can I find detailed specifications for the NVR5198NLT1G? Detailed specifications can be found in the datasheet available on onsemi’s official website and through distributors like Digi-Key and Mouser.
  9. Is the NVR5198NLT1G suitable for high-frequency applications? Yes, it is suitable for high-frequency applications due to its fast switching times.
  10. What is the gate-source voltage (VGS) rating of the NVR5198NLT1G? The gate-source voltage rating is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:182 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):900mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NVR5198NLT3G
NVR5198NLT3G
MOSFET N-CH 60V 1.7A SOT23-3

Similar Products

Part Number NVR5198NLT1G NVR5198NLT3G
Manufacturer onsemi onsemi
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 155mOhm @ 1A, 10V 155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V 5.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 182 pF @ 25 V 182 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 900mW (Ta) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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