NTMFS015N15MC
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onsemi NTMFS015N15MC

Manufacturer No:
NTMFS015N15MC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 9.2A/61A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS015N15MC is an N-Channel Medium Voltage (MV) MOSFET produced by onsemi. This device is fabricated using the advanced PowerTrench® process, which incorporates Shielded Gate technology. This technology has been optimized to enhance performance and reliability in various power management applications. The MOSFET is designed to offer high efficiency, low on-resistance, and robust thermal performance, making it suitable for a wide range of industrial and consumer electronics applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)150 V
ID (Continuous Drain Current)61 A
RDS(ON) (On-Resistance)Typically 1.5 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
Package8-Pin PQFN8

Key Features

  • Advanced PowerTrench® process with Shielded Gate technology for improved performance and reliability.
  • Low on-resistance (RDS(ON)) of typically 1.5 mΩ at VGS = 10 V.
  • High continuous drain current (ID) of 61 A.
  • Robust thermal performance.
  • Compact 8-Pin PQFN8 package.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high power efficiency.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMFS015N15MC? The maximum drain-source voltage is 150 V.
  2. What is the continuous drain current (ID) of this MOSFET? The continuous drain current is 61 A.
  3. What is the typical on-resistance (RDS(ON)) of the NTMFS015N15MC? The typical on-resistance is 1.5 mΩ at VGS = 10 V.
  4. What package type is used for the NTMFS015N15MC? The package type is 8-Pin PQFN8.
  5. What technology is used in the fabrication of this MOSFET? The MOSFET is fabricated using the advanced PowerTrench® process with Shielded Gate technology.
  6. What are some common applications for the NTMFS015N15MC? Common applications include power supplies, motor control systems, industrial automation, consumer electronics, and renewable energy systems.
  7. What is the threshold voltage (VGS(th)) of the NTMFS015N15MC? The threshold voltage is typically 2.5 V.
  8. Is the NTMFS015N15MC suitable for high-power applications? Yes, it is designed for high-power applications due to its high continuous drain current and low on-resistance.
  9. Where can I find detailed specifications for the NTMFS015N15MC? Detailed specifications can be found in the datasheet available on onsemi’s official website and other electronic component distributors like Mouser Electronics.
  10. What are the benefits of using Shielded Gate technology in this MOSFET? Shielded Gate technology enhances performance and reliability by reducing gate charge and improving thermal performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:4.5V @ 162µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2120 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 108.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number NTMFS015N15MC NTMFS011N15MC
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta), 61A (Tc) 10.7A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 29A, 10V 11.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4.5V @ 162µA 4.5V @ 194µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2120 pF @ 75 V 3592 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 108.7W (Tc) 2.7W (Ta), 147W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

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