NTMFS015N15MC
  • Share:

onsemi NTMFS015N15MC

Manufacturer No:
NTMFS015N15MC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 9.2A/61A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS015N15MC is an N-Channel Medium Voltage (MV) MOSFET produced by onsemi. This device is fabricated using the advanced PowerTrench® process, which incorporates Shielded Gate technology. This technology has been optimized to enhance performance and reliability in various power management applications. The MOSFET is designed to offer high efficiency, low on-resistance, and robust thermal performance, making it suitable for a wide range of industrial and consumer electronics applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)150 V
ID (Continuous Drain Current)61 A
RDS(ON) (On-Resistance)Typically 1.5 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
Package8-Pin PQFN8

Key Features

  • Advanced PowerTrench® process with Shielded Gate technology for improved performance and reliability.
  • Low on-resistance (RDS(ON)) of typically 1.5 mΩ at VGS = 10 V.
  • High continuous drain current (ID) of 61 A.
  • Robust thermal performance.
  • Compact 8-Pin PQFN8 package.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high power efficiency.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMFS015N15MC? The maximum drain-source voltage is 150 V.
  2. What is the continuous drain current (ID) of this MOSFET? The continuous drain current is 61 A.
  3. What is the typical on-resistance (RDS(ON)) of the NTMFS015N15MC? The typical on-resistance is 1.5 mΩ at VGS = 10 V.
  4. What package type is used for the NTMFS015N15MC? The package type is 8-Pin PQFN8.
  5. What technology is used in the fabrication of this MOSFET? The MOSFET is fabricated using the advanced PowerTrench® process with Shielded Gate technology.
  6. What are some common applications for the NTMFS015N15MC? Common applications include power supplies, motor control systems, industrial automation, consumer electronics, and renewable energy systems.
  7. What is the threshold voltage (VGS(th)) of the NTMFS015N15MC? The threshold voltage is typically 2.5 V.
  8. Is the NTMFS015N15MC suitable for high-power applications? Yes, it is designed for high-power applications due to its high continuous drain current and low on-resistance.
  9. Where can I find detailed specifications for the NTMFS015N15MC? Detailed specifications can be found in the datasheet available on onsemi’s official website and other electronic component distributors like Mouser Electronics.
  10. What are the benefits of using Shielded Gate technology in this MOSFET? Shielded Gate technology enhances performance and reliability by reducing gate charge and improving thermal performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:4.5V @ 162µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2120 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 108.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.41
77

Please send RFQ , we will respond immediately.

Same Series
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NTMFS015N15MC NTMFS011N15MC
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta), 61A (Tc) 10.7A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 29A, 10V 11.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4.5V @ 162µA 4.5V @ 194µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2120 pF @ 75 V 3592 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 108.7W (Tc) 2.7W (Ta), 147W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP