Overview
The FDD86102LZ is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is fabricated using an advanced PowerTrench process designed to minimize on-state resistance and switching losses. It features a G-S zener to enhance ESD voltage levels, making it suitable for a wide range of applications. The MOSFET is known for its low on-state resistance, fast switching speed, and high ESD protection level.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Polarity | N-Channel |
| VDS (V) | 100 V |
| ID (A) at Ta | 8 A |
| ID (A) at Tc | 35 A |
| PD (W) at Ta | 3.1 W |
| PD (W) at Tc | 54 W |
| RDS(on) Max at VGS = 10 V (mΩ) | 22.5 mΩ |
| RDS(on) Max at VGS = 4.5 V (mΩ) | 31 mΩ |
| VGS(th) Max (V) | 3 V |
| Qg Typ at VGS = 4.5 V (nC) | 8.7 nC |
| Qg Typ at VGS = 10 V (nC) | 11.57 nC |
| ESD Protection Level (HBM) | > 6 kV typical |
| Package Type | DPAK-3 / TO-252-3 |
Key Features
- Advanced PowerTrench process to minimize on-state resistance and switching losses.
- Low on-state resistance: 22.5 mΩ at VGS = 10 V, ID = 8 A.
- Fast switching speed.
- High ESD protection level: > 6 kV typical (HBM).
- 100% UIL tested.
- RoHS Compliant.
- Very low Qg and Qgd compared to competing trench technologies.
Applications
The FDD86102LZ N-Channel MOSFET is suitable for a variety of applications due to its general usage rating. It can be used in:
- Power management systems.
- DC-DC converters.
- Motor control circuits.
- Switching power supplies.
- Automotive and industrial power systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the FDD86102LZ MOSFET?
The maximum drain-source voltage (VDS) is 100 V.
- What is the maximum continuous drain current (ID) at ambient temperature (Ta)?
The maximum continuous drain current (ID) at ambient temperature (Ta) is 8 A.
- What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 8 A?
The on-state resistance (RDS(on)) at VGS = 10 V and ID = 8 A is 22.5 mΩ.
- What is the ESD protection level of the FDD86102LZ MOSFET?
The ESD protection level is > 6 kV typical (HBM).
- Is the FDD86102LZ MOSFET RoHS compliant?
- What is the package type of the FDD86102LZ MOSFET?
The package type is DPAK-3 / TO-252-3.
- What are some typical applications for the FDD86102LZ MOSFET?
Typical applications include power management systems, DC-DC converters, motor control circuits, switching power supplies, and automotive and industrial power systems.
- What is the maximum gate-source voltage (VGS) for the FDD86102LZ MOSFET?
The maximum gate-source voltage (VGS) is ±20 V.
- Does the FDD86102LZ MOSFET have any special testing or certification?
- What is the typical gate charge (Qg) at VGS = 4.5 V?
The typical gate charge (Qg) at VGS = 4.5 V is 8.7 nC.
