Overview
The onsemi ESD7481MUT5G is a dual-element bi-directional Transient Voltage Suppressor (TVS) diode designed to provide ultra-low capacitance ESD protection for voltage-sensitive components. This device is particularly suited for applications where board space is limited and high-frequency performance is critical. With its excellent clamping capability, low leakage, and fast response time, the ESD7481MUT5G is ideal for protecting components in high-speed and high-frequency environments such as USB 2.0 and antenna lines.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Reverse Peak Pulse Current | IPP | 3 A | A |
| Clamping Voltage @ IPP | VC | 10 V @ 1 A, 12 V @ 3 A | V |
| Reverse Working Voltage | VRWM | 3.3 V | V |
| Breakdown Voltage | VBR | 6.0 V @ IT = 1 mA | V |
| Reverse Leakage Current | IR | < 1.0 nA @ VRWM = 3.3 V | nA |
| Junction Capacitance | CJ | 0.25 pF @ VR = 0 V, f = 1 MHz | pF |
| Insertion Loss | 0.030 dBm @ f = 1 MHz | dBm | |
| Response Time | < 1 ns | ns | |
| ESD Protection | ±20 kV IEC61000-4-2 Level 4 | kV | |
| Package Type | X3DFN2 | ||
| Dimensions | 0.60 mm x 0.30 mm x 0.30 mm | mm |
Key Features
- Ultra-low capacitance of 0.25 pF, making it suitable for high-frequency applications.
- Low clamping voltage and low dynamic resistance.
- Small body outline dimensions (0.60 mm x 0.30 mm x 0.30 mm) ideal for space-constrained designs.
- Low leakage current and fast response time (< 1 ns).
- IEC61000-4-2 Level 4 ESD protection with ±20 kV contact and air discharge capability.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- RF signal ESD protection.
- RF switching, PA (Power Amplifier), and antenna ESD protection.
- Near Field Communications (NFC) applications.
- High-speed USB 2.0 and other high-frequency designs.
Q & A
- What is the primary function of the ESD7481MUT5G?
The primary function of the ESD7481MUT5G is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What are the key specifications of the ESD7481MUT5G?
Key specifications include ultra-low capacitance of 0.25 pF, clamping voltage of 10 V @ 1 A and 12 V @ 3 A, reverse working voltage of 3.3 V, and IEC61000-4-2 Level 4 ESD protection.
- What are the typical applications of the ESD7481MUT5G?
Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, as well as Near Field Communications and high-speed USB 2.0 designs.
- What is the package type and dimensions of the ESD7481MUT5G?
The package type is X3DFN2 with dimensions of 0.60 mm x 0.30 mm x 0.30 mm.
- Is the ESD7481MUT5G compliant with environmental regulations?
Yes, the ESD7481MUT5G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the response time of the ESD7481MUT5G?
The response time is less than 1 ns.
- What is the maximum reverse peak pulse current of the ESD7481MUT5G?
The maximum reverse peak pulse current is 3 A.
- Is the ESD7481MUT5G qualified for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the insertion loss of the ESD7481MUT5G?
The insertion loss is 0.030 dBm at 1 MHz.
- What is the junction capacitance of the ESD7481MUT5G?
The junction capacitance is 0.25 pF at VR = 0 V and f = 1 MHz.
