Overview
The ESD7381MUT5G is an ESD protection diode designed by onsemi to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. It is particularly suited for applications requiring ultra-low capacitance, making it ideal for high-frequency designs where board space is limited. The diode offers excellent clamping capability, low leakage, and a fast response time, ensuring robust protection for sensitive electronics.
Key Specifications
Parameter | Value |
---|---|
Package Type | X3DFN-2 |
Capacitance (C Max) | 0.55 pF |
Direction | Unidirectional |
Breakdown Voltage (VBR Min) | 5 V |
Working Peak Reverse Voltage (VRWM Max) | 3.3 V |
Leakage Current (IR Max) | 0.05 µA |
Peak Pulse Power (PPK Max) | 27 W |
Insertion Loss | 0.030 dBm |
Dynamic Resistance | < 1 Ω |
ESD Protection Level | IEC61000-4-2 Level 4 |
Key Features
- Ultra-low capacitance of 0.55 pF, making it suitable for high-frequency applications.
- Excellent clamping capability and low dynamic resistance (< 1 Ω).
- Low leakage current of 0.05 µA.
- Fast response time to ESD events.
- Compact X3DFN-2 package, ideal for space-constrained designs.
- Compliant with IEC61000-4-2 Level 4 ESD protection standards.
Applications
- RF signal ESD protection.
- RF switching, PA, and antenna ESD protection.
- Near Field Communications (NFC).
- Smartphone and other mobile device protection.
- USB 2.0 high-speed and other high-frequency interfaces.
Q & A
- What is the primary function of the ESD7381MUT5G? The primary function is to protect voltage-sensitive components from ESD and transient voltage events.
- What is the capacitance of the ESD7381MUT5G? The capacitance is 0.55 pF.
- What is the package type of the ESD7381MUT5G? The package type is X3DFN-2.
- What are the typical applications of the ESD7381MUT5G? Typical applications include RF signal protection, NFC, smartphones, and high-frequency interfaces like USB 2.0.
- What is the ESD protection level of the ESD7381MUT5G? It complies with IEC61000-4-2 Level 4 ESD protection standards.
- What is the insertion loss of the ESD7381MUT5G? The insertion loss is 0.030 dBm.
- What is the dynamic resistance of the ESD7381MUT5G? The dynamic resistance is less than 1 Ω.
- Is the ESD7381MUT5G suitable for high-frequency designs? Yes, it is particularly suited for high-frequency designs due to its ultra-low capacitance.
- What is the leakage current of the ESD7381MUT5G? The leakage current is 0.05 µA.
- How does the ESD7381MUT5G respond to ESD events? It responds quickly to ESD events with a fast response time.