J113-D74Z
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onsemi J113-D74Z

Manufacturer No:
J113-D74Z
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
JFET N-CH 35V 625MW TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The J113-D74Z is an N-Channel Junction Field-Effect Transistor (JFET) produced by onsemi. This device is part of the J113 series, which is designed for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers. The J113-D74Z is packaged in a TO-92 3L (Pb-Free) case, making it suitable for a variety of applications requiring high reliability and performance.

Key Specifications

Parameter Symbol Value Unit
Drain-Gate Voltage VDG 35 V
Gate-Source Voltage VGS −35 V
Forward Gate Current IGF 50 mA
Operating and Storage Junction Temperature Range TJ, TSTG −55 to 150 °C
Total Device Dissipation PD 625 mW
Thermal Resistance, Junction-to-Case RθJC 125 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W
Gate-Source Breakdown Voltage V(BR)GSS −35 V
Gate-Source Cut-Off Voltage VGS(off) −0.5 to −3.0 V
Drain Cutoff Leakage Current ID(off) −1.0 nA
Zero-Gate Voltage Drain Current IDSS 2.0 mA
Drain-Source On Resistance rDS(on) 100 Ω

Key Features

  • Designed for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers.
  • Sourced from Process 51, ensuring consistent performance.
  • Source and drain are interchangeable, providing flexibility in circuit design.
  • Pb-Free, making it compliant with environmental regulations.
  • High gate-source breakdown voltage (−35 V) and low gate-source cut-off voltage (−0.5 to −3.0 V).
  • Low drain cutoff leakage current (−1.0 nA) and zero-gate voltage drain current (2.0 mA).
  • Low drain-source on resistance (100 Ω), suitable for high-efficiency applications.

Applications

  • Low-level analog switching circuits.
  • Sample and hold circuits.
  • Chopper stabilized amplifiers.
  • Audio and signal processing applications requiring low noise and high linearity.
  • Industrial and automotive electronics where reliability and robustness are critical.

Q & A

  1. What is the maximum drain-gate voltage for the J113-D74Z?

    The maximum drain-gate voltage is 35 V.

  2. What is the operating temperature range for this device?

    The operating and storage junction temperature range is −55 to 150°C.

  3. Is the J113-D74Z Pb-Free?
  4. What are the typical applications for the J113-D74Z?

    Typical applications include low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers.

  5. What is the gate-source cut-off voltage for the J113-D74Z?

    The gate-source cut-off voltage ranges from −0.5 to −3.0 V.

  6. What is the drain-source on resistance of the J113-D74Z?

    The drain-source on resistance is 100 Ω.

  7. Can the source and drain be interchanged in the J113-D74Z?
  8. What is the total device dissipation for the J113-D74Z?

    The total device dissipation is 625 mW.

  9. What is the thermal resistance, junction-to-case for the J113-D74Z?

    The thermal resistance, junction-to-case is 125 °C/W.

  10. What package type is the J113-D74Z available in?

    The J113-D74Z is available in a TO-92 3L (Pb-Free) package.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):35 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:500 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):100 Ohms
Power - Max:625 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number J113-D74Z J111-D74Z J112-D74Z
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 35 V 35 V 35 V
Drain to Source Voltage (Vdss) - - -
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V 20 mA @ 15 V 5 mA @ 15 V
Current Drain (Id) - Max - - -
Voltage - Cutoff (VGS off) @ Id 500 mV @ 1 µA 3 V @ 1 µA 1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds - - -
Resistance - RDS(On) 100 Ohms 30 Ohms 50 Ohms
Power - Max 625 mW 625 mW 625 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3

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