MMBFJ108
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onsemi MMBFJ108

Manufacturer No:
MMBFJ108
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 25V 350MW SSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ108, along with the J109, is an N-Channel Junction Field-Effect Transistor (JFET) produced by onsemi. This device is specifically designed for digital switching applications where very low on-resistance is crucial. It is sourced from onsemi's Process 58 and is available in Pb-free packages, making it environmentally friendly. The MMBFJ108 is known for its high performance and reliability in various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Drain-Gate Voltage VDG 25 V
Gate-Source Voltage VGS −25 V
Forward Gate Current IGF 10 mA
Operating and Storage Junction Temperature Range TJ, TSTG −55 to 150 °C
Total Device Dissipation PD 350 (MMBFJ108), 625 (J109) mW
Thermal Resistance, Junction-to-Case RθJC 125 (J109), N/A (MMBFJ108) °C/W
Thermal Resistance, Junction-to-Ambient RθJA 357 (MMBFJ108), 200 (J109) °C/W
Gate-Source Breakdown Voltage VBR(GSS) −25 V
Gate-Source Cut-Off Voltage VGS(off) −3.0 to −10.0 (MMBFJ108), −2.0 to −6.0 (J109) V
Zero-Gate Voltage Drain Current IDSS 80 (MMBFJ108), 40 (J109) mA
Drain-Source On Resistance rDS(on) 8.0 (MMBFJ108), 12 (J109) Ω

Key Features

  • Low On Resistance: Designed for digital switching applications where very low on-resistance is mandatory.
  • Pb-Free Packages: Environmentally friendly, available in Pb-free packages.
  • High Performance: Suitable for high-performance applications due to its robust electrical characteristics.
  • Wide Operating Temperature Range: Operates over a temperature range of −55°C to 150°C.
  • Low Gate-Source Cut-Off Voltage: Ensures efficient switching with low gate-source voltage requirements.

Applications

  • Digital Switching: Ideal for applications requiring low on-resistance and high switching speeds.
  • Audio and Signal Processing: Suitable for audio amplifiers and signal processing circuits due to its low noise characteristics.
  • Power Management: Can be used in power management circuits where efficient switching is critical.
  • General Purpose Amplification: Useful in various general-purpose amplification and switching applications.

Q & A

  1. What is the maximum drain-gate voltage for the MMBFJ108?

    The maximum drain-gate voltage (VDG) is 25 V.

  2. What is the operating temperature range for the J109 and MMBFJ108?

    The operating and storage junction temperature range is −55°C to 150°C.

  3. What are the typical applications for the MMBFJ108?

    Typical applications include digital switching, audio and signal processing, power management, and general-purpose amplification.

  4. What is the gate-source cut-off voltage for the MMBFJ108?

    The gate-source cut-off voltage (VGS(off)) ranges from −3.0 to −10.0 V for the MMBFJ108.

  5. What is the total device dissipation for the MMBFJ108?

    The total device dissipation (PD) is 350 mW for the MMBFJ108.

  6. Is the MMBFJ108 Pb-free?
  7. What is the thermal resistance, junction-to-ambient, for the MMBFJ108?

    The thermal resistance, junction-to-ambient (RθJA), is 357 °C/W for the MMBFJ108.

  8. What is the zero-gate voltage drain current for the J109?

    The zero-gate voltage drain current (IDSS) is 40 mA for the J109.

  9. What is the drain-source on resistance for the MMBFJ108?

    The drain-source on resistance (rDS(on)) is 8.0 Ω for the MMBFJ108.

  10. Can the MMBFJ108 be used in high-frequency applications?

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):80 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):8 Ohms
Power - Max:350 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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