NSVJ3910SB3T1G
  • Share:

onsemi NSVJ3910SB3T1G

Manufacturer No:
NSVJ3910SB3T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC JFET N-CH 25V 50MA 3CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVJ3910SB3T1G is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. This component is designed to offer high performance and reliability in various electronic applications. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. The NSVJ3910SB3T1G is known for its high forward transfer admittance, high breakdown voltage, and low noise characteristics, which make it an excellent choice for a wide range of uses.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSX25V
Continuous Drain CurrentId20 to 40 mAmA
Power DissipationPd400 mWmW
Minimum Operating TemperatureTj-55 to 150°C°C

Key Features

  • High Forward Transfer Admittance
  • High Breakdown Voltage of 25 V
  • Low Noise Characteristics
  • AEC-Q101 qualified and PPAP capable for automotive applications
  • High reliability and performance in demanding environments

Applications

The NSVJ3910SB3T1G is suitable for a variety of applications, including automotive systems, audio equipment, and other electronic devices that require high reliability and performance. Its high breakdown voltage and low noise characteristics make it particularly useful in audio amplifiers, switching circuits, and other analog applications.

Q & A

  1. What is the maximum drain-to-source voltage of the NSVJ3910SB3T1G?
    The maximum drain-to-source voltage is 25 V.
  2. What is the continuous drain current range of the NSVJ3910SB3T1G?
    The continuous drain current range is 20 to 40 mA.
  3. What is the power dissipation of the NSVJ3910SB3T1G?
    The power dissipation is 400 mW.
  4. Is the NSVJ3910SB3T1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  5. What are the key features of the NSVJ3910SB3T1G?
    The key features include high forward transfer admittance, high breakdown voltage, and low noise characteristics.
  6. What is the operating temperature range of the NSVJ3910SB3T1G?
    The operating temperature range is -55 to 150°C.
  7. Where can I find detailed specifications for the NSVJ3910SB3T1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  8. Is the NSVJ3910SB3T1G used in audio equipment?
    Yes, its high breakdown voltage and low noise characteristics make it suitable for use in audio equipment.
  9. What type of transistor is the NSVJ3910SB3T1G?
    The NSVJ3910SB3T1G is an N-Channel Junction Field-Effect Transistor (JFET).
  10. Why is the NSVJ3910SB3T1G preferred in demanding environments?
    It is preferred due to its high reliability, high performance, and compliance with automotive standards.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):20 mA @ 5 V
Current Drain (Id) - Max:50 mA
Voltage - Cutoff (VGS off) @ Id:600 mV @ 100 µA
Input Capacitance (Ciss) (Max) @ Vds:6pF @ 5V
Resistance - RDS(On):- 
Power - Max:400 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:3-CPH
0 Remaining View Similar

In Stock

$0.63
645

Please send RFQ , we will respond immediately.

Related Product By Categories

MMBF4391LT1G
MMBF4391LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBFJ112
MMBFJ112
onsemi
JFET N-CH 35V 0.35W SOT-23
MCH3914-7-TL-H
MCH3914-7-TL-H
onsemi
JFET N-CH 50MA 300MW SC70FL/MCPH
MMBFJ175
MMBFJ175
Fairchild Semiconductor
P-CHANNEL JFET, TO-236AB
BFR30,215
BFR30,215
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
PMBF4392,215
PMBF4392,215
NXP USA Inc.
JFET N-CH 40V 250MW SOT23
PMBFJ112,215
PMBFJ112,215
NXP USA Inc.
JFET N-CH 40V 0.3W SOT23
PMBFJ177,215
PMBFJ177,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
MMBF4393LT1
MMBF4393LT1
onsemi
JFET N-CH 30V 0.225W SOT23
MMBF5457LT1
MMBF5457LT1
onsemi
MOSFET SS N-CHAN 25V SOT23
BFR30LT1G
BFR30LT1G
onsemi
JFET N-CH 225MW SOT23
PMBFJ113,215
PMBFJ113,215
NXP USA Inc.
JFET N-CH 40V 0.3W SOT23

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB