NSVJ3910SB3T1G
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onsemi NSVJ3910SB3T1G

Manufacturer No:
NSVJ3910SB3T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC JFET N-CH 25V 50MA 3CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVJ3910SB3T1G is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. This component is designed to offer high performance and reliability in various electronic applications. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. The NSVJ3910SB3T1G is known for its high forward transfer admittance, high breakdown voltage, and low noise characteristics, which make it an excellent choice for a wide range of uses.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSX25V
Continuous Drain CurrentId20 to 40 mAmA
Power DissipationPd400 mWmW
Minimum Operating TemperatureTj-55 to 150°C°C

Key Features

  • High Forward Transfer Admittance
  • High Breakdown Voltage of 25 V
  • Low Noise Characteristics
  • AEC-Q101 qualified and PPAP capable for automotive applications
  • High reliability and performance in demanding environments

Applications

The NSVJ3910SB3T1G is suitable for a variety of applications, including automotive systems, audio equipment, and other electronic devices that require high reliability and performance. Its high breakdown voltage and low noise characteristics make it particularly useful in audio amplifiers, switching circuits, and other analog applications.

Q & A

  1. What is the maximum drain-to-source voltage of the NSVJ3910SB3T1G?
    The maximum drain-to-source voltage is 25 V.
  2. What is the continuous drain current range of the NSVJ3910SB3T1G?
    The continuous drain current range is 20 to 40 mA.
  3. What is the power dissipation of the NSVJ3910SB3T1G?
    The power dissipation is 400 mW.
  4. Is the NSVJ3910SB3T1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  5. What are the key features of the NSVJ3910SB3T1G?
    The key features include high forward transfer admittance, high breakdown voltage, and low noise characteristics.
  6. What is the operating temperature range of the NSVJ3910SB3T1G?
    The operating temperature range is -55 to 150°C.
  7. Where can I find detailed specifications for the NSVJ3910SB3T1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  8. Is the NSVJ3910SB3T1G used in audio equipment?
    Yes, its high breakdown voltage and low noise characteristics make it suitable for use in audio equipment.
  9. What type of transistor is the NSVJ3910SB3T1G?
    The NSVJ3910SB3T1G is an N-Channel Junction Field-Effect Transistor (JFET).
  10. Why is the NSVJ3910SB3T1G preferred in demanding environments?
    It is preferred due to its high reliability, high performance, and compliance with automotive standards.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):25 V
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):20 mA @ 5 V
Current Drain (Id) - Max:50 mA
Voltage - Cutoff (VGS off) @ Id:600 mV @ 100 µA
Input Capacitance (Ciss) (Max) @ Vds:6pF @ 5V
Resistance - RDS(On):- 
Power - Max:400 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:3-CPH
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