MMBFJ175LT3G
  • Share:

onsemi MMBFJ175LT3G

Manufacturer No:
MMBFJ175LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET P-CH 30V 0.225W SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ175LT3G is a P-channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is specifically designed for analog switching and chopper applications. It features a low on-resistance (rDS(on)) which enhances efficiency and extends battery life. The transistor is packaged in a miniature SOT-23 surface mount package, which helps in saving board space. Additionally, the MMBFJ175LT3G is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.

Key Specifications

ParameterValue
Channel PolarityP-Channel
VDS (Max)30 V
IDSS (Min/Max)7,000 µA / 60,000 µA
V(BR)GSS (Min)30 V
Ciss (Max)11 pF
Crss (Max)5.5 pF
Package TypeSOT-23 (TO-236)
Thermal Resistance, Junction-to-Ambient (RθJA)556 °C/W
Junction and Storage Temperature (TJ, Tstg)-55 to +150 °C
Power Dissipation (PD)225 mW

Key Features

  • Low on-resistance (rDS(on)) for higher efficiency and extended battery life.
  • Miniature SOT-23 surface mount package to save board space.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Designed for analog switching and chopper applications.

Applications

The MMBFJ175LT3G is suitable for various applications including analog switching and chopper circuits. Its low on-resistance and compact packaging make it ideal for use in battery-powered devices, audio equipment, and other electronic systems where efficiency and space are critical.

Q & A

  1. What is the channel polarity of the MMBFJ175LT3G?
    The MMBFJ175LT3G is a P-channel JFET.
  2. What is the maximum drain-source voltage (VDS) for the MMBFJ175LT3G?
    The maximum drain-source voltage is 30 V.
  3. What is the typical package type for the MMBFJ175LT3G?
    The package type is SOT-23 (TO-236).
  4. Is the MMBFJ175LT3G RoHS compliant?
    Yes, the MMBFJ175LT3G is RoHS compliant.
  5. What is the thermal resistance, junction-to-ambient (RθJA) for the MMBFJ175LT3G?
    The thermal resistance, junction-to-ambient is 556 °C/W.
  6. What are the typical applications for the MMBFJ175LT3G?
    The MMBFJ175LT3G is designed for analog switching and chopper applications.
  7. What is the maximum power dissipation (PD) for the MMBFJ175LT3G?
    The maximum power dissipation is 225 mW.
  8. What is the junction and storage temperature range for the MMBFJ175LT3G?
    The junction and storage temperature range is -55 to +150 °C.
  9. Is the MMBFJ175LT3G Pb-free and halogen-free/BFR-free?
    Yes, the MMBFJ175LT3G is Pb-free and halogen-free/BFR-free.
  10. What are the benefits of the low on-resistance (rDS(on)) in the MMBFJ175LT3G?
    The low on-resistance enhances efficiency and extends battery life.

Product Attributes

FET Type:P-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):7 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V (VGS)
Resistance - RDS(On):125 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.13
681

Please send RFQ , we will respond immediately.

Same Series
MMBFJ175LT3G
MMBFJ175LT3G
JFET P-CH 30V 0.225W SOT23
SMMBFJ175LT1G
SMMBFJ175LT1G
TRANS JFET P-CH 30V SOT23

Similar Products

Part Number MMBFJ175LT3G MMBFJ175LT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Voltage - Breakdown (V(BR)GSS) 30 V 30 V
Drain to Source Voltage (Vdss) - -
Current - Drain (Idss) @ Vds (Vgs=0) 7 mA @ 15 V 7 mA @ 15 V
Current Drain (Id) - Max - -
Voltage - Cutoff (VGS off) @ Id 3 V @ 10 nA 3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V (VGS) 11pF @ 10V (VGS)
Resistance - RDS(On) 125 Ohms 125 Ohms
Power - Max 225 mW 225 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

MMBFJ177LT1G
MMBFJ177LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBFJ202
MMBFJ202
onsemi
JFET N-CH 40V 350MW SOT23-3
MMBF5103
MMBF5103
onsemi
JFET N-CH 40V 0.35W SOT-23
SMMBFJ177LT1G
SMMBFJ177LT1G
onsemi
TRANS JFET P-CH SOT23
MCH3914-7-TL-H
MCH3914-7-TL-H
onsemi
JFET N-CH 50MA 300MW SC70FL/MCPH
NSVJ2394SA3T1G
NSVJ2394SA3T1G
onsemi
IC JFET N-CH LNA SC59-3
BFR30,235
BFR30,235
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
BFR30,215
BFR30,215
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
MMBFJ175LT1
MMBFJ175LT1
onsemi
MOSFET SS P-CHAN 25V SOT23
MMBF5484LT1G
MMBF5484LT1G
onsemi
JFET N-CH 25V 0.225W SOT23
BFR30LT1
BFR30LT1
onsemi
JFET N-CH 225MW SOT23
MMBFJ201_G
MMBFJ201_G
onsemi
INTEGRATED CIRCUIT

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK