MMBFJ175LT3G
  • Share:

onsemi MMBFJ175LT3G

Manufacturer No:
MMBFJ175LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET P-CH 30V 0.225W SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBFJ175LT3G is a P-channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is specifically designed for analog switching and chopper applications. It features a low on-resistance (rDS(on)) which enhances efficiency and extends battery life. The transistor is packaged in a miniature SOT-23 surface mount package, which helps in saving board space. Additionally, the MMBFJ175LT3G is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.

Key Specifications

ParameterValue
Channel PolarityP-Channel
VDS (Max)30 V
IDSS (Min/Max)7,000 µA / 60,000 µA
V(BR)GSS (Min)30 V
Ciss (Max)11 pF
Crss (Max)5.5 pF
Package TypeSOT-23 (TO-236)
Thermal Resistance, Junction-to-Ambient (RθJA)556 °C/W
Junction and Storage Temperature (TJ, Tstg)-55 to +150 °C
Power Dissipation (PD)225 mW

Key Features

  • Low on-resistance (rDS(on)) for higher efficiency and extended battery life.
  • Miniature SOT-23 surface mount package to save board space.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Designed for analog switching and chopper applications.

Applications

The MMBFJ175LT3G is suitable for various applications including analog switching and chopper circuits. Its low on-resistance and compact packaging make it ideal for use in battery-powered devices, audio equipment, and other electronic systems where efficiency and space are critical.

Q & A

  1. What is the channel polarity of the MMBFJ175LT3G?
    The MMBFJ175LT3G is a P-channel JFET.
  2. What is the maximum drain-source voltage (VDS) for the MMBFJ175LT3G?
    The maximum drain-source voltage is 30 V.
  3. What is the typical package type for the MMBFJ175LT3G?
    The package type is SOT-23 (TO-236).
  4. Is the MMBFJ175LT3G RoHS compliant?
    Yes, the MMBFJ175LT3G is RoHS compliant.
  5. What is the thermal resistance, junction-to-ambient (RθJA) for the MMBFJ175LT3G?
    The thermal resistance, junction-to-ambient is 556 °C/W.
  6. What are the typical applications for the MMBFJ175LT3G?
    The MMBFJ175LT3G is designed for analog switching and chopper applications.
  7. What is the maximum power dissipation (PD) for the MMBFJ175LT3G?
    The maximum power dissipation is 225 mW.
  8. What is the junction and storage temperature range for the MMBFJ175LT3G?
    The junction and storage temperature range is -55 to +150 °C.
  9. Is the MMBFJ175LT3G Pb-free and halogen-free/BFR-free?
    Yes, the MMBFJ175LT3G is Pb-free and halogen-free/BFR-free.
  10. What are the benefits of the low on-resistance (rDS(on)) in the MMBFJ175LT3G?
    The low on-resistance enhances efficiency and extends battery life.

Product Attributes

FET Type:P-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):7 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V (VGS)
Resistance - RDS(On):125 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.13
681

Please send RFQ , we will respond immediately.

Same Series
MMBFJ175LT1G
MMBFJ175LT1G
JFET P-CH 30V 0.225W SOT23-3
SMMBFJ175LT1G
SMMBFJ175LT1G
TRANS JFET P-CH 30V SOT23

Similar Products

Part Number MMBFJ175LT3G MMBFJ175LT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Voltage - Breakdown (V(BR)GSS) 30 V 30 V
Drain to Source Voltage (Vdss) - -
Current - Drain (Idss) @ Vds (Vgs=0) 7 mA @ 15 V 7 mA @ 15 V
Current Drain (Id) - Max - -
Voltage - Cutoff (VGS off) @ Id 3 V @ 10 nA 3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V (VGS) 11pF @ 10V (VGS)
Resistance - RDS(On) 125 Ohms 125 Ohms
Power - Max 225 mW 225 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

NSVJ3910SB3T1G
NSVJ3910SB3T1G
onsemi
IC JFET N-CH 25V 50MA 3CPH
MMBF4391LT1G
MMBF4391LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBF4093
MMBF4093
onsemi
JFET N-CH 40V 350MW SOT23-3
BF510
BF510
NXP USA Inc.
RF MOSFET N-CHANNEL JFET 20V 100
MMBFJ175LT1G
MMBFJ175LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBF5103
MMBF5103
onsemi
JFET N-CH 40V 0.35W SOT-23
NSVJ2394SA3T1G
NSVJ2394SA3T1G
onsemi
IC JFET N-CH LNA SC59-3
PMBFJ308,215
PMBFJ308,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
PMBFJ112,215
PMBFJ112,215
NXP USA Inc.
JFET N-CH 40V 0.3W SOT23
PMBF4393,215
PMBF4393,215
NXP USA Inc.
JFET N-CH 40V 250MW SOT23
MMBF5484LT1
MMBF5484LT1
onsemi
MOSFET SS N-CHAN 25V SOT23
PMBFJ113,215
PMBFJ113,215
NXP USA Inc.
JFET N-CH 40V 0.3W SOT23

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3