Overview
The MMBFJ175LT1G is a P-Channel Depletion Mode JFET (Junction Field-Effect Transistor) manufactured by onsemi. This device is designed for use in various electronic circuits requiring a high degree of reliability and performance. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications that require unique site and control change requirements. The MMBFJ175LT1G is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Drain-Gate Voltage | VDG | - | 25 | V |
| Reverse Gate-Source Voltage | VGS(r) | - | -25 | V |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | - | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C |
| Gate-Source Breakdown Voltage (VDS = 0, ID = 1.0 μA) | V(BR)GSS | 30 | - | V |
| Gate Reverse Current (VDS = 0 V, VGS = 20 V) | IGSS | - | 1.0 nA | nA |
| Gate-Source Cutoff Voltage (VDS = 15 V, ID = 10 nA) | VGS(OFF) | 3.0 | 6.0 | V |
| Zero Gate-Voltage Drain Current (VGS = 0, VDS = 15 V) | IDSS | 7.0 | 60 | mA |
| Drain Source On Resistance (ID = 500 μA) | rDS(on) | - | 125 | Ω |
| Input Capacitance (VDS = 0, VGS = 10 V, f = 1.0 MHz) | Ciss | - | 11 | pF |
| Reverse Transfer Capacitance (VDS = 0, VGS = 10 V, f = 1.0 MHz) | Crss | - | 5.5 | pF |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- P-Channel Depletion Mode JFET with high reliability and performance.
- High gate-source breakdown voltage (V(BR)GSS = 30 V).
- Low gate reverse current (IGSS = 1.0 nA).
- Compact SOT-23-3 (TO-236) surface mount package.
Applications
The MMBFJ175LT1G is versatile and can be used in a variety of applications, including:
- Automotive systems requiring high reliability and compliance with automotive standards.
- Switching and amplification circuits in industrial and consumer electronics.
- Audio and video equipment where low noise and high fidelity are required.
- General-purpose electronic circuits needing a reliable P-Channel JFET.
Q & A
- What is the maximum drain-gate voltage for the MMBFJ175LT1G?
The maximum drain-gate voltage is 25 V. - Is the MMBFJ175LT1G RoHS compliant?
Yes, the MMBFJ175LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the thermal resistance, junction-to-ambient for this device?
The thermal resistance, junction-to-ambient (RθJA) is 556 °C/W. - What are the junction and storage temperature ranges for the MMBFJ175LT1G?
The junction and storage temperature ranges are -55°C to +150°C. - What is the gate-source breakdown voltage for this JFET?
The gate-source breakdown voltage (V(BR)GSS) is 30 V. - What is the typical gate reverse current?
The typical gate reverse current (IGSS) is 1.0 nA. - What is the package type of the MMBFJ175LT1G?
The package type is SOT-23-3 (TO-236) surface mount. - Is the MMBFJ175LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications. - What are some common applications of the MMBFJ175LT1G?
Common applications include automotive systems, switching and amplification circuits, audio and video equipment, and general-purpose electronic circuits. - What is the input capacitance of the MMBFJ175LT1G?
The input capacitance (Ciss) is 11 pF at VDS = 0, VGS = 10 V, and f = 1.0 MHz.
