Overview
The MMBFJ309LT1 is a N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi, designed for VHF/UHF amplifier applications. This transistor is part of the MMBFJ309L and MMBFJ310L series, which are known for their high performance and reliability. The device is packaged in a SOT-23 (TO-236) case, making it suitable for a variety of compact electronic designs.
The MMBFJ309LT1 is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 25 | Vdc |
| Gate-Source Voltage | VGS | 25 | Vdc |
| Gate Current | IG | 10 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Gate-Source Breakdown Voltage (IG = -1.0 μAdc, VDS = 0) | V(BR)GSS | -25 | Vdc |
| Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) | VGS(off) | -1.0 to -2.0 | Vdc |
| Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) | IDSS | 12 to 24 | mAdc |
| Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) | |Yfs| | 8.0 to 18 | mmhos |
| Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) | Ciss | 5.0 | pF |
Key Features
- Interchangeable Drain and Source: The MMBFJ309LT1 allows for the drain and source terminals to be interchanged, providing flexibility in circuit design.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and specific quality standards.
- Environmental Compliance: Pb-free, halogen-free, and RoHS compliant, ensuring the device meets environmental regulations.
- High Performance: Optimized for VHF/UHF amplifier applications with good small-signal characteristics and low noise figures.
- Compact Packaging: SOT-23 (TO-236) package, ideal for space-constrained designs.
Applications
- VHF/UHF Amplifiers: The primary application area, where the transistor's high frequency performance and low noise are beneficial.
- Automotive Electronics: Given its AEC-Q101 qualification, it is suitable for use in automotive systems requiring high reliability.
- Communication Equipment: Used in various communication devices where high-frequency amplification is necessary.
- Industrial Control Systems: Can be used in industrial control circuits that require reliable and high-performance amplification.
Q & A
- What is the maximum drain-source voltage for the MMBFJ309LT1?
The maximum drain-source voltage (VDS) is 25 Vdc.
- Is the MMBFJ309LT1 environmentally compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What is the thermal resistance of the MMBFJ309LT1?
The thermal resistance (RJA) is 556 °C/W.
- What are the typical applications for the MMBFJ309LT1?
It is primarily used in VHF/UHF amplifiers, automotive electronics, communication equipment, and industrial control systems.
- Is the MMBFJ309LT1 AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the package type of the MMBFJ309LT1?
The device is packaged in a SOT-23 (TO-236) case.
- What is the gate-source cutoff voltage range for the MMBFJ309LT1?
The gate-source cutoff voltage (VGS(off)) ranges from -1.0 to -2.0 Vdc.
- What is the forward transfer admittance of the MMBFJ309LT1?
The forward transfer admittance (|Yfs|) is between 8.0 to 18 mmhos.
- What is the input capacitance of the MMBFJ309LT1?
The input capacitance (Ciss) is 5.0 pF.
- Can the drain and source terminals of the MMBFJ309LT1 be interchanged?
Yes, the drain and source terminals are interchangeable.
