BFR30,235
  • Share:

NXP USA Inc. BFR30,235

Manufacturer No:
BFR30,235
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 10MA 250MW SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFR30,235 is a Junction Field-Effect Transistor (JFET) produced by NXP USA Inc. This component is part of the BFR30 series and is known for its reliability and performance in various electronic circuits. Although the BFR30,235 is no longer in production, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterDescription
TypeN-channel JFET
PackageTO-236AB plastic, surface-mounted package
Number of Terminals3
Pitch1.9 mm
Body Dimensions2.9 mm x 1.3 mm x 1 mm
Drain Current (Idss)10 mA

Key Features

  • N-channel JFET with high input impedance
  • Surface-mounted package (TO-236AB) for compact designs
  • Low noise operation suitable for audio and RF applications
  • High reliability and stability in various operating conditions

Applications

The BFR30,235 JFET is suitable for a variety of applications including audio amplifiers, RF amplifiers, and other low-noise, high-impedance circuits. It is also used in switching circuits and as a voltage-controlled resistor in analog circuits.

Q & A

  1. What is the BFR30,235? The BFR30,235 is an N-channel Junction Field-Effect Transistor (JFET) produced by NXP USA Inc.
  2. What package type does the BFR30,235 use? The BFR30,235 uses a TO-236AB plastic, surface-mounted package.
  3. What are the body dimensions of the BFR30,235? The body dimensions are 2.9 mm x 1.3 mm x 1 mm.
  4. What is the maximum drain current (Idss) of the BFR30,235? The maximum drain current (Idss) is 10 mA.
  5. Is the BFR30,235 still in production? No, the BFR30,235 is no longer manufactured.
  6. What are some common applications of the BFR30,235? It is used in audio amplifiers, RF amplifiers, switching circuits, and as a voltage-controlled resistor in analog circuits.
  7. Why is the BFR30,235 suitable for audio and RF applications? It is suitable due to its low noise operation and high input impedance.
  8. What are the key features of the BFR30,235? Key features include high input impedance, surface-mounted package, low noise operation, and high reliability.
  9. Can I still find the BFR30,235 for purchase? Although it is no longer manufactured, it may still be available from some distributors or as part of existing inventory.
  10. What should I do if I need a substitute for the BFR30,235? You should consider alternative package types or substitutes recommended by the manufacturer or distributors.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):- 
Drain to Source Voltage (Vdss):25 V
Current - Drain (Idss) @ Vds (Vgs=0):4 mA @ 10 V
Current Drain (Id) - Max:10 mA
Voltage - Cutoff (VGS off) @ Id:5 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds:4pF @ 10V
Resistance - RDS(On):- 
Power - Max:250 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
533

Please send RFQ , we will respond immediately.

Same Series
BFR30,235
BFR30,235
JFET N-CH 10MA 250MW SOT23
BFR31,235
BFR31,235
JFET N-CH 10MA 250MW SOT23
BFR31,215
BFR31,215
JFET N-CH 10MA 250MW SOT23

Similar Products

Part Number BFR30,235 BFR31,235 BFR30,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) - - -
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 4 mA @ 10 V 1 mA @ 10 V 4 mA @ 10 V
Current Drain (Id) - Max 10 mA 10 mA 10 mA
Voltage - Cutoff (VGS off) @ Id 5 V @ 0.5 nA 2.5 V @ 0.5 nA 5 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V 4pF @ 10V 4pF @ 10V
Resistance - RDS(On) - - -
Power - Max 250 mW 250 mW 250 mW
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

Related Product By Categories

BF510
BF510
NXP USA Inc.
RF MOSFET N-CHANNEL JFET 20V 100
MMBF4392LT1G
MMBF4392LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBF4117
MMBF4117
onsemi
JFET N-CH 40V 0.225W SOT23
MMBF5103
MMBF5103
onsemi
JFET N-CH 40V 0.35W SOT-23
MMBFU310LT1G
MMBFU310LT1G
onsemi
JFET N-CH 25V 0.225W SOT23-3
MMBFJ175
MMBFJ175
Fairchild Semiconductor
P-CHANNEL JFET, TO-236AB
MMBFJ175LT3G
MMBFJ175LT3G
onsemi
JFET P-CH 30V 0.225W SOT23
PMBFJ310,215
PMBFJ310,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
PMBF4393,215
PMBF4393,215
NXP USA Inc.
JFET N-CH 40V 250MW SOT23
PMBFJ174,215
PMBFJ174,215
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
MMBF5484LT1
MMBF5484LT1
onsemi
MOSFET SS N-CHAN 25V SOT23
MMBF5457LT1G
MMBF5457LT1G
onsemi
JFET N-CH 25V 0.225W SOT23

Related Product By Brand

BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
BC807-40QA,147
BC807-40QA,147
NXP USA Inc.
NOW NEXPERIA BC807-40 - SMALL SI
MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
74HC245PW/AU118
74HC245PW/AU118
NXP USA Inc.
IC TXRX NON-INVERT 6V 20TSSOP
74LVC02ADB,112
74LVC02ADB,112
NXP USA Inc.
NOR GATE, LVC/LCX/Z SERIES, 4-FU
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN