MMBF4391LT1G
  • Share:

onsemi MMBF4391LT1G

Manufacturer No:
MMBF4391LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 30V 0.225W SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBF4391LT1G is a JFET (Junction Field-Effect Transistor) switching transistor produced by onsemi. This N-channel JFET is designed for high-performance switching applications and is part of the MMBF4391L series, which includes the MMBF4391L, MMBF4392L, and MMBF4393L models. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDS 30 Vdc
Drain-Gate Voltage VDG 30 Vdc
Gate-Source Voltage VGS 30 Vdc
Forward Gate Current IG(f) 50 mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Gate-Source Breakdown Voltage (IG = 1.0 μAdc, VDS = 0) V(BR)GSS 30 Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25°C) IGSS 1.0 nAdc
Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) -4.0 to -10 Vdc
Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 50 to 150 mAdc
Drain-Source On-Voltage (ID = 12 mAdc, VGS = 0) VDS(on) 0.4 Vdc
Static Drain-Source On-Resistance (ID = 1.0 mAdc, VGS = 0) rDS(on) 30 Ω
Input Capacitance (VDS = 0 Vdc, VGS = -15 Vdc, f = 1.0 MHz) Ciss 14 pF
Reverse Transfer Capacitance (VDS = 0 Vdc, VGS = -12 Vdc, f = 1.0 MHz) Crss 3.5 pF

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
  • Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • High Performance Switching: Designed for high-speed switching applications with low on-state resistance and fast switching times.
  • Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.
  • Low On-State Resistance: Static drain-source on-resistance as low as 30 Ω.
  • Compact SOT-23 Package: Small footprint suitable for space-constrained designs.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • High-Speed Switching Circuits: Ideal for applications requiring fast switching times and low on-state resistance.
  • Audio and Signal Processing: Can be used in audio amplifiers and signal processing circuits where low noise and high fidelity are required.
  • Industrial Control Systems: Applicable in industrial control systems that demand high reliability and performance.
  • Consumer Electronics: Suitable for use in consumer electronics such as audio equipment, medical devices, and other high-performance electronic devices.

Q & A

  1. What is the maximum drain-source voltage for the MMBF4391LT1G?

    The maximum drain-source voltage (VDS) is 30 Vdc.

  2. Is the MMBF4391LT1G RoHS compliant?

    Yes, the MMBF4391LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  3. What is the typical on-state resistance of the MMBF4391LT1G?

    The static drain-source on-resistance (rDS(on)) is typically 30 Ω.

  4. What is the operating temperature range for the MMBF4391LT1G?

    The junction and storage temperature range is from -55°C to +150°C.

  5. What package type is the MMBF4391LT1G available in?

    The MMBF4391LT1G is available in a SOT-23 (TO-236) package.

  6. Is the MMBF4391LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.

  7. What is the maximum forward gate current for the MMBF4391LT1G?

    The maximum forward gate current (IG(f)) is 50 mAdc.

  8. What is the input capacitance of the MMBF4391LT1G?

    The input capacitance (Ciss) is 14 pF at VDS = 0 Vdc, VGS = -15 Vdc, and f = 1.0 MHz.

  9. How does the MMBF4391LT1G perform in terms of switching speed?

    The device is designed for high-speed switching with fast turn-on and turn-off times.

  10. What are some typical applications for the MMBF4391LT1G?

    Typical applications include automotive systems, high-speed switching circuits, audio and signal processing, industrial control systems, and consumer electronics.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):30 V
Current - Drain (Idss) @ Vds (Vgs=0):50 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:4 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:14pF @ 15V
Resistance - RDS(On):30 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.39
1,520

Please send RFQ , we will respond immediately.

Same Series
SMMBF4393LT1G
SMMBF4393LT1G
JFET N-CH 30V 0.225W SOT23-3
MMBF4391LT1G
MMBF4391LT1G
JFET N-CH 30V 0.225W SOT23-3
MMBF4393LT3G
MMBF4393LT3G
JFET N-CH 30V 0.225W SOT23
MMBF4393LT1G
MMBF4393LT1G
JFET N-CH 30V 0.225W SOT23-3
MMBF4392LT1
MMBF4392LT1
JFET SS N-CHAN 30V SOT23
MMBF4393LT1
MMBF4393LT1
JFET N-CH 30V 0.225W SOT23
SMMBF4391LT1G
SMMBF4391LT1G
JFET N-CH 30V 0.225W SOT23

Similar Products

Part Number MMBF4391LT1G MMBF4392LT1G MMBF4393LT1G MMBF4391LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel -
Voltage - Breakdown (V(BR)GSS) 30 V 30 V 30 V -
Drain to Source Voltage (Vdss) 30 V 30 V 30 V -
Current - Drain (Idss) @ Vds (Vgs=0) 50 mA @ 15 V 25 mA @ 15 V 5 mA @ 15 V -
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 4 V @ 10 nA 2 V @ 10 nA 500 mV @ 10 nA -
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 15V 14pF @ 15V 14pF @ 15V -
Resistance - RDS(On) 30 Ohms 60 Ohms 100 Ohms -
Power - Max 225 mW 225 mW 225 mW -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

MMBFJ177LT1G
MMBFJ177LT1G
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBF4093
MMBF4093
onsemi
JFET N-CH 40V 350MW SOT23-3
MMBF4393LT1G
MMBF4393LT1G
onsemi
JFET N-CH 30V 0.225W SOT23-3
MMBFJ176
MMBFJ176
onsemi
JFET P-CH 30V 0.225W SOT23-3
MMBFJ202
MMBFJ202
onsemi
JFET N-CH 40V 350MW SOT23-3
MMBFJ113
MMBFJ113
onsemi
JFET N-CH 35V 350MW SOT23
MMBFJ112
MMBFJ112
onsemi
JFET N-CH 35V 0.35W SOT-23
MMBFJ110
MMBFJ110
onsemi
JFET N-CH 25V 0.46W 3-SSOT
MMBF5457
MMBF5457
onsemi
JFET N-CH 25V 350MW SOT23
PMBFJ309,215
PMBFJ309,215
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
MMBF4416LT1
MMBF4416LT1
onsemi
MOSFET SS N-CHAN VHF 30V SOT23
MMBF5484LT1
MMBF5484LT1
onsemi
MOSFET SS N-CHAN 25V SOT23

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT