MMBF4391LT1G
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onsemi MMBF4391LT1G

Manufacturer No:
MMBF4391LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
JFET N-CH 30V 0.225W SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBF4391LT1G is a JFET (Junction Field-Effect Transistor) switching transistor produced by onsemi. This N-channel JFET is designed for high-performance switching applications and is part of the MMBF4391L series, which includes the MMBF4391L, MMBF4392L, and MMBF4393L models. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDS 30 Vdc
Drain-Gate Voltage VDG 30 Vdc
Gate-Source Voltage VGS 30 Vdc
Forward Gate Current IG(f) 50 mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Gate-Source Breakdown Voltage (IG = 1.0 μAdc, VDS = 0) V(BR)GSS 30 Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25°C) IGSS 1.0 nAdc
Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) -4.0 to -10 Vdc
Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 50 to 150 mAdc
Drain-Source On-Voltage (ID = 12 mAdc, VGS = 0) VDS(on) 0.4 Vdc
Static Drain-Source On-Resistance (ID = 1.0 mAdc, VGS = 0) rDS(on) 30 Ω
Input Capacitance (VDS = 0 Vdc, VGS = -15 Vdc, f = 1.0 MHz) Ciss 14 pF
Reverse Transfer Capacitance (VDS = 0 Vdc, VGS = -12 Vdc, f = 1.0 MHz) Crss 3.5 pF

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
  • Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • High Performance Switching: Designed for high-speed switching applications with low on-state resistance and fast switching times.
  • Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.
  • Low On-State Resistance: Static drain-source on-resistance as low as 30 Ω.
  • Compact SOT-23 Package: Small footprint suitable for space-constrained designs.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • High-Speed Switching Circuits: Ideal for applications requiring fast switching times and low on-state resistance.
  • Audio and Signal Processing: Can be used in audio amplifiers and signal processing circuits where low noise and high fidelity are required.
  • Industrial Control Systems: Applicable in industrial control systems that demand high reliability and performance.
  • Consumer Electronics: Suitable for use in consumer electronics such as audio equipment, medical devices, and other high-performance electronic devices.

Q & A

  1. What is the maximum drain-source voltage for the MMBF4391LT1G?

    The maximum drain-source voltage (VDS) is 30 Vdc.

  2. Is the MMBF4391LT1G RoHS compliant?

    Yes, the MMBF4391LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  3. What is the typical on-state resistance of the MMBF4391LT1G?

    The static drain-source on-resistance (rDS(on)) is typically 30 Ω.

  4. What is the operating temperature range for the MMBF4391LT1G?

    The junction and storage temperature range is from -55°C to +150°C.

  5. What package type is the MMBF4391LT1G available in?

    The MMBF4391LT1G is available in a SOT-23 (TO-236) package.

  6. Is the MMBF4391LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.

  7. What is the maximum forward gate current for the MMBF4391LT1G?

    The maximum forward gate current (IG(f)) is 50 mAdc.

  8. What is the input capacitance of the MMBF4391LT1G?

    The input capacitance (Ciss) is 14 pF at VDS = 0 Vdc, VGS = -15 Vdc, and f = 1.0 MHz.

  9. How does the MMBF4391LT1G perform in terms of switching speed?

    The device is designed for high-speed switching with fast turn-on and turn-off times.

  10. What are some typical applications for the MMBF4391LT1G?

    Typical applications include automotive systems, high-speed switching circuits, audio and signal processing, industrial control systems, and consumer electronics.

Product Attributes

FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):30 V
Current - Drain (Idss) @ Vds (Vgs=0):50 mA @ 15 V
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:4 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:14pF @ 15V
Resistance - RDS(On):30 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBF4391LT1G MMBF4392LT1G MMBF4393LT1G MMBF4391LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel -
Voltage - Breakdown (V(BR)GSS) 30 V 30 V 30 V -
Drain to Source Voltage (Vdss) 30 V 30 V 30 V -
Current - Drain (Idss) @ Vds (Vgs=0) 50 mA @ 15 V 25 mA @ 15 V 5 mA @ 15 V -
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id 4 V @ 10 nA 2 V @ 10 nA 500 mV @ 10 nA -
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 15V 14pF @ 15V 14pF @ 15V -
Resistance - RDS(On) 30 Ohms 60 Ohms 100 Ohms -
Power - Max 225 mW 225 mW 225 mW -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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