MMBF4393LT1
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onsemi MMBF4393LT1

Manufacturer No:
MMBF4393LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
JFET N-CH 30V 0.225W SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBF4393LT1 is an N-channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is specifically designed for analog switching and chopper applications. It is part of the MMBF4391L, MMBF4392L, and MMBF4393L series, which are known for their high performance and reliability in various electronic circuits.

The MMBF4393LT1 is packaged in a Pb-Free SOT-23 (TO-236) case, making it compliant with RoHS standards and suitable for use in environmentally friendly designs. The device is also AEC-Q101 qualified and PPAP capable, which ensures its suitability for automotive and other applications requiring stringent quality and reliability standards.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDS 30 Vdc
Drain-Gate Voltage VDG 30 Vdc
Gate-Source Voltage VGS 30 Vdc
Forward Gate Current IG(f) 50 mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Derate above 25°C - 1.8 mW/°C
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Gate-Source Breakdown Voltage (IG = 1.0 μAdc, VDS = 0) V(BR)GSS 30 Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25°C) IGSS -1.0 nAdc -
Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 5.0 to 30 mAdc
Drain-Source On-Voltage (ID = 3.0 mAdc, VGS = 0) VDS(on) -0.4 Vdc
Static Drain-Source On-Resistance (ID = 1.0 mAdc, VGS = 0) rDS(on) -100 Ω
Input Capacitance (VDS = 0 Vdc, VGS = -15 Vdc, f = 1.0 MHz) Ciss -14 pF
Reverse Transfer Capacitance (VDS = 0 Vdc, VGS = -12 Vdc, f = 1.0 MHz) Crss -3.5 pF

Key Features

  • Pb-Free and RoHS Compliant: The device is packaged in a Pb-Free SOT-23 case, ensuring compliance with environmental regulations.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and quality standards.
  • High Performance in Analog Switching and Chopper Applications: Designed for efficient operation in analog switching and chopper circuits.
  • Low On-State Resistance: Offers low drain-source on-resistance, enhancing the device's efficiency in switching applications.
  • Wide Operating Temperature Range: Can operate over a junction and storage temperature range of -55 to +150°C.
  • Small Signal Capacitance: Features low input and reverse transfer capacitance, making it suitable for high-frequency applications.

Applications

  • Analog Switching: Ideal for use in analog switching circuits where low on-state resistance and high switching speed are required.
  • Chopper Applications: Suitable for chopper circuits in power supplies, motor control, and other high-frequency applications.
  • Automotive Electronics: AEC-Q101 qualification makes it suitable for use in automotive systems, including audio, infotainment, and control systems.
  • Industrial Control Systems: Can be used in various industrial control applications requiring reliable and efficient switching performance.
  • Consumer Electronics: Applicable in consumer electronics such as audio equipment, power supplies, and other electronic devices.

Q & A

  1. What is the maximum drain-source voltage for the MMBF4393LT1?

    The maximum drain-source voltage (VDS) is 30 Vdc.

  2. Is the MMBF4393LT1 RoHS compliant?

    Yes, the device is Pb-Free and RoHS compliant.

  3. What is the typical drain-source on-resistance of the MMBF4393LT1?

    The static drain-source on-resistance (rDS(on)) is approximately 100 Ω at ID = 1.0 mAdc and VGS = 0.

  4. What are the key applications of the MMBF4393LT1?

    The device is primarily used in analog switching, chopper applications, automotive electronics, industrial control systems, and consumer electronics.

  5. What is the operating temperature range of the MMBF4393LT1?

    The junction and storage temperature range is -55 to +150°C.

  6. Is the MMBF4393LT1 AEC-Q101 qualified?

    Yes, the device is AEC-Q101 qualified and PPAP capable.

  7. What is the package type of the MMBF4393LT1?

    The device is packaged in a SOT-23 (TO-236) case.

  8. What is the maximum forward gate current for the MMBF4393LT1?

    The maximum forward gate current (IG(f)) is 50 mAdc.

  9. What is the input capacitance of the MMBF4393LT1?

    The input capacitance (Ciss) is approximately 14 pF at VDS = 0 Vdc and VGS = -15 Vdc.

  10. Can the MMBF4393LT1 be used in high-frequency applications?

    Yes, the device features low input and reverse transfer capacitance, making it suitable for high-frequency applications.

Product Attributes

FET Type:- 
Voltage - Breakdown (V(BR)GSS):- 
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):- 
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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MMBF4393LT1G
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MMBF4392LT1
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Similar Products

Part Number MMBF4393LT1 MMBF4393LT1G MMBF4391LT1 MMBF4392LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
FET Type - N-Channel - -
Voltage - Breakdown (V(BR)GSS) - 30 V - -
Drain to Source Voltage (Vdss) - 30 V - -
Current - Drain (Idss) @ Vds (Vgs=0) - 5 mA @ 15 V - -
Current Drain (Id) - Max - - - -
Voltage - Cutoff (VGS off) @ Id - 500 mV @ 10 nA - -
Input Capacitance (Ciss) (Max) @ Vds - 14pF @ 15V - -
Resistance - RDS(On) - 100 Ohms - -
Power - Max - 225 mW - -
Operating Temperature - -55°C ~ 150°C (TJ) - -
Mounting Type - Surface Mount - -
Package / Case - TO-236-3, SC-59, SOT-23-3 - -
Supplier Device Package - SOT-23-3 (TO-236) - -

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