Overview
The PMBFJ176,215 is a p-channel silicon field-effect transistor (FET) produced by NXP USA Inc. This device is part of the PMBFJ176 series and is housed in a plastic microminiature SOT23 envelope. It is designed for use in various analog applications, including switches, choppers, and commutators, utilizing surface-mount device (SMD) technology. A notable feature of this transistor is the interchangeability of the drain and source connections, enhancing its versatility in circuit design.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | - | - | - | 30 | V |
| VGSo (Gate-Source Voltage) | - | - | - | 30 | V |
| IG (Gate Current) | - | - | - | 50 | mA |
| Ptot (Total Power Dissipation) | Tamb = 25 °C | - | - | 300 | mW |
| IDSS (Drain Current) | VDS = 15 V; VGS = 0 V | 2 | - | 35 | mA |
| V(BR)GSS (Gate-Source Breakdown Voltage) | IG = 1 μA; VDS = 0 V | - | - | 30 | V |
Key Features
- Interchangeable Drain and Source Connections: Enhances flexibility in circuit design and application.
- Analog Switches, Choppers, and Commutators: Suitable for various analog applications using SMD technology.
- Low Power Dissipation: Total power dissipation up to 300 mW at Tamb = 25 °C.
- Compact SOT23 Package: Ideal for space-constrained designs.
- High Gate-Source Breakdown Voltage: Up to 30 V, ensuring robust operation.
Applications
- Analog Switches: Used in applications requiring high precision and low leakage current.
- Choppers and Commutators: Suitable for high-frequency switching applications.
- Audio and Signal Processing: Ideal for audio amplifiers, filters, and other signal processing circuits.
- Automotive and Industrial Control Systems: Can be used in various control and switching applications in automotive and industrial environments.
Q & A
- What is the maximum drain-source voltage for the PMBFJ176,215?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical drain current (IDSS) for this transistor?
The typical drain current (IDSS) is between 2 mA and 35 mA when VDS = 15 V and VGS = 0 V.
- What is the gate-source breakdown voltage (V(BR)GSS)?
The gate-source breakdown voltage (V(BR)GSS) is up to 30 V.
- What is the total power dissipation (Ptot) at Tamb = 25 °C?
The total power dissipation (Ptot) is up to 300 mW at Tamb = 25 °C.
- What package type is the PMBFJ176,215 available in?
The PMBFJ176,215 is available in a plastic microminiature SOT23 envelope.
- What are some common applications for the PMBFJ176,215?
Common applications include analog switches, choppers, commutators, audio and signal processing, and automotive and industrial control systems.
- Can the drain and source connections be interchanged?
- What is the maximum gate current (IG)?
The maximum gate current (IG) is 50 mA.
- What are the typical fall and turn-off times for this transistor?
The typical fall time (tf) is 20 ns, and the typical turn-off time (toff) is 6 ns.
- Where can I find detailed specifications for the PMBFJ176,215?
Detailed specifications can be found in the product data sheet available on NXP's official website or through distributors like Digi-Key and Mouser Electronics.
