BFS17W,135
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NXP USA Inc. BFS17W,135

Manufacturer No:
BFS17W,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.6GHZ SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BFS17W,135 is a silicon NPN transistor produced by NXP USA Inc., designed for high-frequency applications. It is packaged in a plastic SOT323 (SC-70) surface-mounted package, making it suitable for compact and efficient circuit designs. This transistor is primarily intended for use as a mixer, oscillator, and IF amplifier in UHF and VHF tuners, leveraging its wideband capabilities up to 1 GHz.

Key Specifications

ParameterConditionsMin.Max.Unit
Collector-Base Voltage (VCBO)--25V
Collector-Emitter Voltage (VCEO)--15V
Collector Current (IC)--50mA
DC Current Gain (hFE)IC = 2 mA; VCE = 1 V2590--
Transition Frequency (fT)IC = 25 mA; VCE = 5 V; f = 500 MHz-1.6-GHz
Power Dissipation (Ptot)--300mW
Operating Temperature (Tj)--175°C
Noise Figure (NF)f = 500 MHz-4.5-dB

Key Features

  • High-frequency operation up to 1 GHz, making it suitable for UHF and VHF applications.
  • High transition frequency (fT) of 1.6 GHz.
  • Low noise figure of 4.5 dB at 500 MHz.
  • Compact SOT323 (SC-70) package for surface mounting.
  • DC current gain (hFE) of 25 to 90 at IC = 2 mA and VCE = 1 V.
  • Maximum collector current of 50 mA and collector-emitter voltage of 15 V.

Applications

The BFS17W,135 is primarily intended for use in high-frequency circuits, particularly as a mixer, oscillator, and IF amplifier in UHF and VHF tuners. Its wideband capabilities and low noise figure make it an ideal choice for radio frequency (RF) applications.

Q & A

  1. What is the package type of the BFS17W,135 transistor?
    The BFS17W,135 is packaged in a plastic SOT323 (SC-70) surface-mounted package.
  2. What are the primary applications of the BFS17W,135 transistor?
    The BFS17W,135 is primarily used as a mixer, oscillator, and IF amplifier in UHF and VHF tuners.
  3. What is the maximum collector-emitter voltage of the BFS17W,135?
    The maximum collector-emitter voltage (VCEO) is 15 V.
  4. What is the transition frequency (fT) of the BFS17W,135?
    The transition frequency (fT) is 1.6 GHz.
  5. What is the maximum collector current of the BFS17W,135?
    The maximum collector current (IC) is 50 mA.
  6. What is the typical noise figure of the BFS17W,135 at 500 MHz?
    The typical noise figure is 4.5 dB at 500 MHz.
  7. What is the operating temperature range of the BFS17W,135?
    The operating temperature range is up to 175°C (Tj).
  8. Is the BFS17W,135 RoHS compliant?
    Yes, the BFS17W,135 is RoHS compliant.
  9. What is the DC current gain (hFE) of the BFS17W,135?
    The DC current gain (hFE) is 25 to 90 at IC = 2 mA and VCE = 1 V.
  10. What is the power dissipation (Ptot) of the BFS17W,135?
    The power dissipation (Ptot) is 300 mW.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.6GHz
Noise Figure (dB Typ @ f):4.5dB @ 500MHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 2mA, 1V
Current - Collector (Ic) (Max):50mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
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Same Series
BFS17W,115
BFS17W,115
RF TRANS NPN 15V 1.6GHZ SOT323-3

Similar Products

Part Number BFS17W,135 BFS17W,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 1.6GHz 1.6GHz
Noise Figure (dB Typ @ f) 4.5dB @ 500MHz 4.5dB @ 500MHz
Gain - -
Power - Max 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2mA, 1V 25 @ 2mA, 1V
Current - Collector (Ic) (Max) 50mA 50mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70

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