BFU550R
  • Share:

NXP USA Inc. BFU550R

Manufacturer No:
BFU550R
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 11GHZ SOT143B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU550R is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is manufactured by NXP USA Inc. and is packaged in a plastic, 4-pin dual-emitter SOT143B package. This transistor is part of NXP's range of RF wideband transistors, making it suitable for various radio frequency applications that require high performance and low noise levels.

Key Specifications

Parameter Value
Type NPN RF Transistor
Package SOT143B (TO-253-4, TO-253AA)
Maximum Collector-Emitter Voltage 12 V
Maximum Collector Current 50 mA
Maximum Frequency 11 GHz
Maximum Power Dissipation 450 mW

Key Features

  • High-speed operation suitable for RF applications up to 11 GHz.
  • Low noise characteristics, making it ideal for low noise amplifier applications.
  • Compact SOT143B package, which is convenient for surface mount applications.
  • Dual-emitter configuration, providing flexibility in circuit design.

Applications

  • Low noise amplifiers in radio frequency systems.
  • High-frequency amplifiers in communication equipment.
  • Radar and microwave systems requiring low noise and high speed.
  • Wireless communication systems, including cellular and satellite communications.

Q & A

  1. What is the BFU550R transistor used for? The BFU550R is used in high-speed, low-noise RF applications, such as low noise amplifiers and high-frequency amplifiers in communication equipment.
  2. What is the maximum collector-emitter voltage of the BFU550R? The maximum collector-emitter voltage is 12 V.
  3. What is the package type of the BFU550R? The BFU550R is packaged in a SOT143B (TO-253-4, TO-253AA) package.
  4. What is the maximum frequency the BFU550R can operate at? The BFU550R can operate up to 11 GHz.
  5. What are the key features of the BFU550R? Key features include high-speed operation, low noise characteristics, and a compact SOT143B package.
  6. Where can I find evaluation kits for the BFU550R? Evaluation kits are available from NXP, such as the OM7962 kit, which includes unpopulated evaluation boards and samples of the transistors.
  7. What are some common applications of the BFU550R? Common applications include low noise amplifiers, high-frequency amplifiers, radar, and microwave systems.
  8. Who manufactures the BFU550R? The BFU550R is manufactured by NXP USA Inc.
  9. What is the maximum power dissipation of the BFU550R? The maximum power dissipation is 450 mW.
  10. Where can I purchase the BFU550R? The BFU550R can be purchased from various suppliers, including Digi-Key, X-On Electronics, and other authorized distributors.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):0.7dB @ 900MHz
Gain:21dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 8V
Current - Collector (Ic) (Max):50mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:SOT-143B
0 Remaining View Similar

In Stock

$0.58
67

Please send RFQ , we will respond immediately.

Same Series
BFU550VL
BFU550VL
RF TRANS NPN 12V 11GHZ SOT143B

Similar Products

Part Number BFU550R BFU520R BFU530R BFU550AR
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V 12V
Frequency - Transition 11GHz 10.5GHz 11GHz 11GHz
Noise Figure (dB Typ @ f) 0.7dB @ 900MHz 0.65dB @ 900MHz 0.6dB @ 900MHz 0.6dB @ 900MHz
Gain 21dB 20dB 21.5dB 18dB
Power - Max 450mW 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V 60 @ 5mA, 8V 60 @ 10mA, 8V 60 @ 15mA, 8V
Current - Collector (Ic) (Max) 50mA 30mA 40mA 50mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-143B SOT-143B SOT-143B SOT-23 (TO-236AB)

Related Product By Categories

BFU520X215
BFU520X215
NXP USA Inc.
NPN RF TRANSISTOR
BLT81
BLT81
NXP USA Inc.
RF SMALL SIGNAL BIPOLAR TRANSIST
BLF6G20-180PN112
BLF6G20-180PN112
NXP USA Inc.
RF POWER TRANSISTORS
BFU520XRVL
BFU520XRVL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143R
BFG541,115
BFG541,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT223
BFG425W,135
BFG425W,135
NXP USA Inc.
RF TRANS NPN 4.5V 25GHZ CMPAK-4
PBR941,215
PBR941,215
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
BFG591,115
BFG591,115
NXP USA Inc.
RF TRANS NPN 15V 7GHZ SOT223
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
MMBTH10LT1
MMBTH10LT1
onsemi
TRANS SS VHF NPN 25V SOT23
MRF5812R1
MRF5812R1
Microsemi Corporation
RF TRANS NPN 15V 5GHZ 8SO
BFR92ALT1
BFR92ALT1
Microsemi Corporation
RF TRANS 15V 4.5GHZ SOT23

Related Product By Brand

PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
LPC2131FBD64/01,15
LPC2131FBD64/01,15
NXP USA Inc.
IC MCU 16/32BIT 32KB FLSH 64LQFP
S9S12G64ACLH
S9S12G64ACLH
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 64LQFP
SC16C554DBIA68,518
SC16C554DBIA68,518
NXP USA Inc.
IC UART QUAD 68PLCC
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX