Overview
The BFR106,215 is an NPN silicon planar epitaxial transistor manufactured by NXP USA Inc. This component is designed for low noise, general RF applications and is packaged in a plastic SOT23 envelope. It is particularly suited for high-frequency operations, making it a valuable component in various communication systems and RF circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | BFR106,215 |
| Category | Transistors - Bipolar (BJT) - RF |
| Manufacturer | NXP USA Inc. |
| Description | RF TRANS NPN 15V 5GHZ TO236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA, 9V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 800MHz |
| Power - Max | 500mW |
Key Features
- High-frequency operation up to 5GHz, making it suitable for RF front-end circuits and communication systems.
- Low noise characteristics, ideal for applications requiring minimal signal distortion.
- Surface mount package (TO-236-3, SC-59, SOT-23-3) for compact and efficient design.
- Lead-free and RoHS compliant, ensuring environmental sustainability.
- Maximum collector current of 100mA and collector-emitter breakdown voltage of 15V.
- Maximum power dissipation of 500mW.
Applications
The BFR106,215 is primarily used in high-frequency applications, including:
- RF amplifiers and oscillators.
- Mixers and RF front-end circuits in communication systems.
- Wireless communication systems.
- General RF applications requiring low noise and high frequency operation.
Q & A
- What is the BFR106,215 transistor used for? The BFR106,215 is used in high-frequency applications, including RF amplifiers, oscillators, mixers, and RF front-end circuits in communication systems.
- What is the frequency range of the BFR106,215 transistor? The BFR106,215 operates up to 5GHz.
- What is the package type of the BFR106,215 transistor? The BFR106,215 is packaged in TO-236-3, SC-59, SOT-23-3.
- What is the maximum collector current of the BFR106,215 transistor? The maximum collector current is 100mA.
- What is the collector-emitter breakdown voltage of the BFR106,215 transistor? The collector-emitter breakdown voltage is 15V.
- What is the noise figure of the BFR106,215 transistor? The noise figure is typically 3.5dB at 800MHz.
- Is the BFR106,215 transistor RoHS compliant? Yes, the BFR106,215 is lead-free and RoHS compliant.
- What is the maximum power dissipation of the BFR106,215 transistor? The maximum power dissipation is 500mW.
- What is the operating temperature range of the BFR106,215 transistor? The operating temperature range is up to 175°C (TJ).
- What are some common applications of RF BJTs like the BFR106,215? RF BJTs are commonly used in amplifiers, oscillators, mixers, and RF front-end circuits in communication systems.
