BFU725F/N1,115
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NXP USA Inc. BFU725F/N1,115

Manufacturer No:
BFU725F/N1,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 2.8V 55GHZ 4SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU725F/N1,115 is an NPN silicon germanium microwave transistor manufactured by NXP. This transistor is part of the BFU725 series, known for its high-performance characteristics and wideband capabilities. It is designed for high-frequency applications, offering a range of package, process, and specification options. The BFU725F/N1,115 is particularly suited for use in microwave communications systems and digital cordless applications due to its high gain, high transition frequency, and low noise characteristics.

Key Specifications

Polarity NPN
CE Voltage-Max 2.8V
Package Style SOT-343F-4
Mounting Type Surface Mount
Operating Frequency Range 100 MHz to 20 GHz
Power Dissipation 136 mW
Compliance RoHS, EU RoHS Compliant, Lead-Free (Pb)

Key Features

  • High gain
  • High transition frequency
  • Low noise
  • Silicon germanium technology for enhanced performance
  • Surface mount package (SOT-343F-4) for easy integration

Applications

  • Noise amplifiers for microwave communications systems
  • Digital cordless applications
  • Other high-frequency RF applications requiring high gain and low noise

Q & A

  1. What is the polarity of the BFU725F/N1,115 transistor?

    The BFU725F/N1,115 is an NPN transistor.

  2. What is the maximum CE voltage for the BFU725F/N1,115?

    The maximum CE voltage is 2.8V.

  3. What is the package style of the BFU725F/N1,115?

    The package style is SOT-343F-4.

  4. What is the mounting type of the BFU725F/N1,115?

    The mounting type is Surface Mount.

  5. What is the operating frequency range of the BFU725F/N1,115?

    The operating frequency range is from 100 MHz to 20 GHz.

  6. Is the BFU725F/N1,115 RoHS compliant?

    Yes, the BFU725F/N1,115 is RoHS compliant and lead-free.

  7. What are the key features of the BFU725F/N1,115?

    The key features include high gain, high transition frequency, and low noise.

  8. What are some common applications for the BFU725F/N1,115?

    Common applications include noise amplifiers for microwave communications systems and digital cordless applications.

  9. What is the power dissipation of the BFU725F/N1,115?

    The power dissipation is 136 mW.

  10. Is the BFU725F/N1,115 available in bulk packaging?

    Yes, it is available in bulk packaging among other options.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):2.8V
Frequency - Transition:55GHz
Noise Figure (dB Typ @ f):0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain:10dB ~ 24dB
Power - Max:136mW
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 10mA, 2V
Current - Collector (Ic) (Max):40mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343 Reverse Pinning
Supplier Device Package:4-SO
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In Stock

$0.54
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Same Series
OM7623/BFU725F/1500,598
OM7623/BFU725F/1500,598
EVAL BOARD FOR BFU725F 1.5GHZ

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