Overview
The BFS17SE6327HTSA1 is a high-performance RF transistor produced by Infineon Technologies. This component is designed for radio frequency applications and features a dual NPN transistor configuration. It is part of Infineon's portfolio of semiconductor solutions, which are renowned for their reliability and performance in various electronic systems.
This transistor is particularly suited for use in wireless communications, RF amplifiers, and other high-frequency applications due to its robust specifications and compact surface-mount package.
Key Specifications
| Category | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Transistor Type | 2 NPN (Dual) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Frequency - Transition | 1.4GHz |
| Power - Max | 280mW |
| Current - Collector (Ic) (Max) | 25mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Noise Figure (dB Typ @ f) | 3dB ~ 5dB @ 800MHz |
Key Features
- Dual NPN Transistor Configuration: Ideal for applications requiring dual transistor functionality in a single package.
- High Frequency Capability: Operates up to 1.4GHz, making it suitable for RF amplifiers and other high-frequency applications.
- Low Noise Figure: Offers a noise figure of 3dB ~ 5dB at 800MHz, ensuring minimal noise in RF circuits.
- Compact Surface Mount Package: Available in 6-VSSOP, SC-88, and SOT-363 packages, facilitating space-efficient designs.
- High Operating Temperature: Can operate up to 150°C (TJ), enhancing reliability in demanding environments.
Applications
- Wireless Communications: Suitable for use in cellular base stations, wireless local area networks (WLAN), and other wireless communication systems.
- RF Amplifiers: Ideal for amplifying RF signals in various applications, including radio transmitters and receivers.
- High-Frequency Circuits: Used in circuits requiring high-frequency operation, such as microwave amplifiers and oscillators.
- Automotive and Industrial Electronics: Can be used in automotive and industrial systems that require robust and reliable RF components.
Q & A
- What is the BFS17SE6327HTSA1 transistor used for?
The BFS17SE6327HTSA1 is used in radio frequency applications, including wireless communications, RF amplifiers, and other high-frequency circuits.
- Who is the manufacturer of the BFS17SE6327HTSA1?
The BFS17SE6327HTSA1 is manufactured by Infineon Technologies.
- What is the maximum operating temperature of the BFS17SE6327HTSA1?
The maximum operating temperature (TJ) of the BFS17SE6327HTSA1 is 150°C.
- What is the maximum collector current of the BFS17SE6327HTSA1?
The maximum collector current (Ic) of the BFS17SE6327HTSA1 is 25mA.
- What is the noise figure of the BFS17SE6327HTSA1 at 800MHz?
The noise figure of the BFS17SE6327HTSA1 at 800MHz is typically between 3dB and 5dB.
- What package types are available for the BFS17SE6327HTSA1?
The BFS17SE6327HTSA1 is available in 6-VSSOP, SC-88, and SOT-363 packages.
- Is the BFS17SE6327HTSA1 RoHS compliant?
Yes, the BFS17SE6327HTSA1 is RoHS compliant.
- What is the maximum power dissipation of the BFS17SE6327HTSA1?
The maximum power dissipation of the BFS17SE6327HTSA1 is 280mW.
- What is the DC current gain (hFE) of the BFS17SE6327HTSA1?
The DC current gain (hFE) of the BFS17SE6327HTSA1 is a minimum of 40 at 2mA and 1V.
- What is the collector-emitter breakdown voltage of the BFS17SE6327HTSA1?
The collector-emitter breakdown voltage of the BFS17SE6327HTSA1 is 15V.
- Is the BFS17SE6327HTSA1 still in production?
No, the BFS17SE6327HTSA1 is listed as obsolete.
